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Defect related issues in the “current roll-off” in InGaN based light emitting diodes

Applied physics letters, 2007-10, Vol.91 (18), p.181103

2007

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Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy

Journal of applied physics, 2014-12, Vol.116 (22), p.223503

2014

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On the lattice parameters of GaN

Applied physics letters, 2007-07, Vol.91 (3), p.031911-031911-3

2007

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Properties of the main Mg-related acceptors in GaN from optical and structural studies

Journal of applied physics, 2014-02, Vol.115 (5), p.053507

2014

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Infrared dielectric functions and phonon modes of high-quality ZnO films

Journal of applied physics, 2003-01, Vol.93 (1), p.126-133

2003

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Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition

Journal of applied physics, 2005-11, Vol.98 (9), p.093519

2005

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Evidence for two Mg related acceptors in GaN

Physical review letters, 2009-06, Vol.102 (23), p.235501-235501, Article 235501

2009

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Recombination of free and bound excitons in GaN

Physica Status Solidi (b), 2008-09, Vol.245 (9), p.1723-1740

2008

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Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

Journal of applied physics, 2008-05, Vol.103 (9)

2008

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Effect of silicon and oxygen doping on donor bound excitons in bulk GaN

Physical review. B, Condensed matter and materials physics, 2011-10, Vol.84 (16), p.165213, Article 165213

2011

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Effect of Mg doping on the structural and free-charge carrier properties of InN films

Journal of applied physics, 2014-04, Vol.115 (16)

2014

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III-V nitrides--important future electronic materials

Journal of materials science. Materials in electronics, 1999-06, Vol.10 (4), p.227-254

Monemar, B

1999

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Bound excitons in GaN

Journal of physics. Condensed matter, 2001-08, Vol.13 (32), p.7011-7026

Monemar, B

2001

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Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN

Applied physics letters, 2013-11, Vol.103 (19), p.192101

2013

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Atom probe tomography study of Mg-doped GaN layers

Nanotechnology, 2014-07, Vol.25 (27), p.275701-275701

2014

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Anisotropic strain and phonon deformation potentials in GaN

Physical review. B, Condensed matter and materials physics, 2007-05, Vol.75 (19), p.195217, Article 195217

2007

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Surface potential effect on excitons in AlGaN/GaN quantum well structures

Applied physics letters, 2013-02, Vol.102 (8)

2013

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Correlation between switching to n-type conductivity and structural defects in highly Mg-doped InN

Applied physics letters, 2015-06, Vol.106 (23)

2015

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Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy

Applied physics letters, 1999-07, Vol.75 (4), p.501-503

1999

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Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

Journal of applied physics, 2006-05, Vol.99 (9)

2006

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Crystal phase engineered quantum wells in ZnO nanowires

Nanotechnology, 2013-05, Vol.24 (21), p.215202-215202

2013

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Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy

Journal of applied physics, 2006-03, Vol.99 (6), p.066105-066105-3

2006

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Mie resonances, infrared emission, and the band gap of InN

Physical review letters, 2004-03, Vol.92 (11), p.117407-117407, Article 117407

2004

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High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire

Applied physics letters, 2006-07, Vol.89 (5), p.051914

2006

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Optical and structural studies of homoepitaxially grown m -plane GaN

Applied physics letters, 2012-04, Vol.100 (17), p.172108-172108-4

2012

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Defect related issues in the “current roll-off” in InGaN based light emitting diodes

Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy

On the lattice parameters of GaN

Properties of the main Mg-related acceptors in GaN from optical and structural studies

Infrared dielectric functions and phonon modes of high-quality ZnO films

Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition

Evidence for two Mg related acceptors in GaN

Recombination of free and bound excitons in GaN

Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

Effect of silicon and oxygen doping on donor bound excitons in bulk GaN

Effect of Mg doping on the structural and free-charge carrier properties of InN films

III-V nitrides--important future electronic materials

Bound excitons in GaN

Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN

Atom probe tomography study of Mg-doped GaN layers

Anisotropic strain and phonon deformation potentials in GaN

Surface potential effect on excitons in AlGaN/GaN quantum well structures

Correlation between switching to n-type conductivity and structural defects in highly Mg-doped InN

Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy

Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

Crystal phase engineered quantum wells in ZnO nanowires

Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy

Mie resonances, infrared emission, and the band gap of InN

High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire

Optical and structural studies of homoepitaxially grown m -plane GaN

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