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Type 1 interferon signature and cytotoxic T lymphocyte activation targeted against sweat ducts in inflammatory acquired idiopathic generalized anhidrosis

Journal of the European Academy of Dermatology and Venereology, 2023-10, Vol.37 (10), p.2124-2132

2023

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Properties of the main Mg-related acceptors in GaN from optical and structural studies

Journal of applied physics, 2014-02, Vol.115 (5), p.053507

2014

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High Temperature-Induced Repression of the Rice Sucrose Transporter (OsSUT1) and Starch Synthesis-Related Genes in Sink and Source Organs at Milky Ripening Stage Causes Chalky Grains

Journal of agronomy and crop science (1986), 2013-06, Vol.199 (3), p.178-188

2013

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A rapid translocation of photoassimilates from source organs maintains grain yield in cowpea subjected to drought stress during grain filling

Biologia plantarum, 2020-01, Vol.64 (1), p.529-534

2020

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1200 V SiC IE-UMOSFET with low on-resistance and high threshold voltage

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Vegetative growth after flowering through gibberellin biosynthesis regulates pod setting rate in soybean (Glycine max (L.) Merr.)

Plant signaling & behavior, 2018-07, Vol.13 (8), p.e1473668-5

2018

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Quasi-ballistic thermal conduction in 6H–SiC

Materials today physics, 2021-09, Vol.20, p.100462, Article 100462

2021

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Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification

Journal of crystal growth, 2007, Vol.298, p.349-353

2007

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Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

Journal of applied physics, 2006-05, Vol.99 (9)

2006

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Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy

Applied physics letters, 2006-11, Vol.89 (22), p.221901-221901-2

2006

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Growths of AlInN Single Layers and Distributed Bragg Reflectors for VCSELs

MRS proceedings, 2015, Vol.1736 (1), p.101-106, Article mrsf14-1736-t13-08

2015

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One-step lateral growth for reduction in defect density of a -plane GaN on r -sapphire substrate and its application in light emitters

Physica status solidi. A, Applications and materials science, 2007-06, Vol.204 (6), p.2005-2009

2007

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Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE

Journal of crystal growth, 2007-03, Vol.300 (1), p.141-144

2007

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Reduction in defect density over whole area of (1$ bar 1 $00) m -plane GaN using one-sidewall seeded epitaxial lateral overgrowth

Physica Status Solidi (b), 2007-06, Vol.244 (6), p.1848-1852

2007

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Ontogenetic changes of the water status and accumulated soluble compounds in developing and ripening mume (Prunus mume) fruit measured by ¹H-NMR analysis

Advances in horticultural science, 2015-01, Vol.29 (1), p.3-12

2015

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Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (7), p.1632-1635

2006

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Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure

Thin solid films, 2006-10, Vol.515 (2), p.768-770

2006

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Microstructure of thick AlN grown on sapphire by high-temperature MOVPE

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (7), p.1626-1631

2006

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Nitride-based light-emitting solar cell

Physica status solidi. C, 2010-07, Vol.7 (7-8), p.1807-1809

2010

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High efficiency violet to blue light emission in porous SiC produced by anodic method

Physica status solidi. C, 2010-10, Vol.7 (10), p.2459-2462

2010

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Crystal growth and p-type conductivity control of AlGaN for high-efficiency nitride-based UV emitters

Physica status solidi. C, 2009-12, Vol.6 (12), p.2621-2625

2009

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GaInN/GaN p-i-n light-emitting solar cells

Physica status solidi. C, 2010-10, Vol.7 (10), p.2382-2385

2010

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Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates

Journal of crystal growth, 2007, Vol.298, p.261-264

2007

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Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate

Physica status solidi. C, 2010-07, Vol.7 (7-8), p.1980-1982

2010

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Control of Dislocations and Stress in AlGaN on Sapphire Using a Low Temperature Interlayer

physica status solidi (b), 1999-11, Vol.216 (1), p.683-689

1999

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Type 1 interferon signature and cytotoxic T lymphocyte activation targeted against sweat ducts in inflammatory acquired idiopathic generalized anhidrosis

Properties of the main Mg-related acceptors in GaN from optical and structural studies

High Temperature-Induced Repression of the Rice Sucrose Transporter (OsSUT1) and Starch Synthesis-Related Genes in Sink and Source Organs at Milky Ripening Stage Causes Chalky Grains

A rapid translocation of photoassimilates from source organs maintains grain yield in cowpea subjected to drought stress during grain filling

1200 V SiC IE-UMOSFET with low on-resistance and high threshold voltage

Vegetative growth after flowering through gibberellin biosynthesis regulates pod setting rate in soybean (Glycine max (L.) Merr.)

Quasi-ballistic thermal conduction in 6H–SiC

Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification

Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy

Growths of AlInN Single Layers and Distributed Bragg Reflectors for VCSELs

One-step lateral growth for reduction in defect density of a -plane GaN on r -sapphire substrate and its application in light emitters

Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE

Reduction in defect density over whole area of (1$ bar 1 $00) m -plane GaN using one-sidewall seeded epitaxial lateral overgrowth

Ontogenetic changes of the water status and accumulated soluble compounds in developing and ripening mume (Prunus mume) fruit measured by ¹H-NMR analysis

Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates

Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure

Microstructure of thick AlN grown on sapphire by high-temperature MOVPE

Nitride-based light-emitting solar cell

High efficiency violet to blue light emission in porous SiC produced by anodic method

Crystal growth and p-type conductivity control of AlGaN for high-efficiency nitride-based UV emitters

GaInN/GaN p-i-n light-emitting solar cells

Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates

Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate

Control of Dislocations and Stress in AlGaN on Sapphire Using a Low Temperature Interlayer

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