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Emergence of high quality sputtered III-nitride semiconductors and devices

Semiconductor science and technology, 2019-09, Vol.34 (9), p.93003

2019

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A comprehensive review of ZnO materials and devices

Journal of applied physics, 2005-08, Vol.98 (4), p.041301-041301-103

2005

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Thermal quenching of the yellow luminescence in GaN

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Ferromagnetism of ZnO and GaN: A Review

Journal of materials science. Materials in electronics, 2005-09, Vol.16 (9), p.555-597

2005

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Investigation of high density two-dimensional electron gas in Zn-polar BeMgZnO/ZnO heterostructures

Applied physics letters, 2017-10, Vol.111 (18)

2017

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Oxides, Oxides, and More Oxides: High-[kappa] Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics

Critical reviews in solid state and materials sciences, 2009-07, Vol.34 (3/4), p.89

2009

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Terahertz oscillations in gallium nitride quantum-well channels predicted by hot-electron noise temperature behavior at microwave frequency

Journal of applied physics, 2020-08, Vol.128 (5)

2020

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Properties of the main Mg-related acceptors in GaN from optical and structural studies

Journal of applied physics, 2014-02, Vol.115 (5), p.053507

2014

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Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

Scientific reports, 2016-11, Vol.6 (1), p.37511-37511, Article 37511

2016

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Comprehensive characterization of hydride VPE grown GaN layers and templates

Materials science & engineering. R, Reports : a review journal, 2001-06, Vol.33 (5), p.135-207

MORKOC, H

2001

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Hot-electron energy relaxation time in Ga-doped ZnO films

Journal of applied physics, 2015-02, Vol.117 (6)

2015

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Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them

Journal of applied physics, 2010-08, Vol.108 (3), p.033112-033112-13

2010

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Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on photoexcited carrier density

Applied physics letters, 2006-09, Vol.89 (11), p.112111-112111-3

2006

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Self-formation of high-field domain in epitaxial ZnO and its suppression in ZnO/MgZnO heterostructure

Applied physics letters, 2021-06, Vol.118 (25)

2021

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Lattice parameters and electronic structure of BeMgZnO quaternary solid solutions: Experiment and theory

Journal of applied physics, 2016-03, Vol.119 (9)

2016

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Electron drift velocity in wurtzite ZnO at high electric fields: Experiment and simulation

Journal of applied physics, 2019-11, Vol.126 (18)

2019

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Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy

Journal of applied physics, 2012-05, Vol.111 (10), p.103713-103713-9

2012

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Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

Applied physics letters, 2013-11, Vol.103 (19), p.193507

2013

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InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

Applied physics letters, 2010-07, Vol.97 (3)

2010

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Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN

Applied physics letters, 2013-11, Vol.103 (19), p.192101

2013

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Effect of oxygen-to-metal flux ratio on incorporation of metal species into quaternary BeMgZnO grown by plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2017-06, Vol.467, p.145-149

2017

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Growth kinetics of O-polar BexMgyZn1-x-yO alloy: Role of Zn to Be and Mg flux ratio as a guide to growth at high temperature

Journal of applied physics, 2017-05, Vol.121 (18)

2017

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On carrier spillover in c- and m-plane InGaN light emitting diodes

Applied physics letters, 2009-11, Vol.95 (20), p.201113-201113-3

2009

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Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

Journal of applied physics, 2014-02, Vol.115 (7)

2014

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Luminescence properties of defects in ZnO

Physica. B, Condensed matter, 2007-12, Vol.401, p.358-361

2007

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Emergence of high quality sputtered III-nitride semiconductors and devices

A comprehensive review of ZnO materials and devices

Thermal quenching of the yellow luminescence in GaN

Ferromagnetism of ZnO and GaN: A Review

Investigation of high density two-dimensional electron gas in Zn-polar BeMgZnO/ZnO heterostructures

Oxides, Oxides, and More Oxides: High-[kappa] Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics

Terahertz oscillations in gallium nitride quantum-well channels predicted by hot-electron noise temperature behavior at microwave frequency

Properties of the main Mg-related acceptors in GaN from optical and structural studies

Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

Comprehensive characterization of hydride VPE grown GaN layers and templates

Hot-electron energy relaxation time in Ga-doped ZnO films

Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them

Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on photoexcited carrier density

Self-formation of high-field domain in epitaxial ZnO and its suppression in ZnO/MgZnO heterostructure

Lattice parameters and electronic structure of BeMgZnO quaternary solid solutions: Experiment and theory

Electron drift velocity in wurtzite ZnO at high electric fields: Experiment and simulation

Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN

Effect of oxygen-to-metal flux ratio on incorporation of metal species into quaternary BeMgZnO grown by plasma-assisted molecular beam epitaxy

Growth kinetics of O-polar BexMgyZn1-x-yO alloy: Role of Zn to Be and Mg flux ratio as a guide to growth at high temperature

On carrier spillover in c- and m-plane InGaN light emitting diodes

Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

Luminescence properties of defects in ZnO

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