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Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants

Journal of applied physics, 2017-06, Vol.121 (23)

2017

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GaN Substrates-Progress, Status, and Prospects

IEEE journal of selected topics in quantum electronics, 2009-07, Vol.15 (4), p.1041-1052

2009

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Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment

AIP advances, 2017-09, Vol.7 (9), p.095302-095302-15

2017

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Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition

Journal of applied physics, 2005-11, Vol.98 (9), p.093519

2005

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Electron band bending and surface sensitivity: X-ray photoelectron spectroscopy of polar GaN surfaces

Surface science, 2017-10, Vol.664, p.241-245

2017

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Evidence for two Mg related acceptors in GaN

Physical review letters, 2009-06, Vol.102 (23), p.235501-235501, Article 235501

2009

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Electron band bending of polar, semipolar and non-polar GaN surfaces

Journal of applied physics, 2016-03, Vol.119 (10), p.105303

2016

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Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction

Applied physics letters, 2015-01, Vol.106 (2)

2015

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InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

Applied physics letters, 2010-07, Vol.97 (3)

2010

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On carrier spillover in c- and m-plane InGaN light emitting diodes

Applied physics letters, 2009-11, Vol.95 (20), p.201113-201113-3

2009

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Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN{101¯1} and GaN{202¯1} surfaces

Journal of applied physics, 2014-09, Vol.116 (10)

2014

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Modulated optical sensitivity with nanostructured gallium nitride

Applied physics letters, 2015-04, Vol.106 (15)

2015

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Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

Applied physics letters, 2013-11, Vol.103 (19), p.193507

2013

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Quantitative low-energy electron diffraction analysis of the GaN(0001¯) (1×1) reconstruction

Surface science, 2012-04, Vol.606 (7-8), p.740-743

2012

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Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe

Applied physics letters, 2012-01, Vol.100 (3), p.031908-031908-3

2012

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Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Journal of crystal growth, 2013-10, Vol.380, p.14-17

2013

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GaN polarity determination by photoelectron diffraction

Applied physics letters, 2013-08, Vol.103 (9)

2013

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Anisotropic strain and phonon deformation potentials in GaN

Physical review. B, Condensed matter and materials physics, 2007-05, Vol.75 (19), p.195217, Article 195217

2007

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Dielectric response functions of the ( 000 1 ¯ ) , ( 10 1 ¯ 3 ) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopy

Journal of applied physics, 2011-08, Vol.110 (4), p.043507-043507-7

2011

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Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

Applied physics letters, 2009-09, Vol.95 (12)

2009

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Charge transfer in semi-insulating Fe-doped GaN

Journal of applied physics, 2012-07, Vol.112 (1)

2012

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Erratum: “Electron band bending of polar, semipolar and non-polar GaN surfaces” [J. Appl. Phys. 119, 105303 (2016)]

Journal of applied physics, 2016-04, Vol.119 (15)

2016

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Cathodoluminescence imaging for the determination of dislocation density in differently doped HVPE GaN

Journal of crystal growth, 2012-02, Vol.340 (1), p.78-82

2012

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Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates

Applied physics letters, 2013-10, Vol.103 (18), p.181106

2013

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Stress and wafer bending of a -plane GaN layers on r -plane sapphire substrates

Journal of applied physics, 2006-11, Vol.100 (10), p.103511-103511-11

2006

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Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants

GaN Substrates-Progress, Status, and Prospects

Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment

Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition

Electron band bending and surface sensitivity: X-ray photoelectron spectroscopy of polar GaN surfaces

Evidence for two Mg related acceptors in GaN

Electron band bending of polar, semipolar and non-polar GaN surfaces

Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

On carrier spillover in c- and m-plane InGaN light emitting diodes

Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN{101¯1} and GaN{202¯1} surfaces

Modulated optical sensitivity with nanostructured gallium nitride

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

Quantitative low-energy electron diffraction analysis of the GaN(0001¯) (1×1) reconstruction

Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe

Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

GaN polarity determination by photoelectron diffraction

Anisotropic strain and phonon deformation potentials in GaN

Dielectric response functions of the ( 000 1 ¯ ) , ( 10 1 ¯ 3 ) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopy

Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

Charge transfer in semi-insulating Fe-doped GaN

Erratum: “Electron band bending of polar, semipolar and non-polar GaN surfaces” [J. Appl. Phys. 119, 105303 (2016)]

Cathodoluminescence imaging for the determination of dislocation density in differently doped HVPE GaN

Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates

Stress and wafer bending of a -plane GaN layers on r -plane sapphire substrates

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