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Properties of the main Mg-related acceptors in GaN from optical and structural studies

Journal of applied physics, 2014-02, Vol.115 (5), p.053507

2014

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Evidence for two Mg related acceptors in GaN

Physical review letters, 2009-06, Vol.102 (23), p.235501-235501, Article 235501

2009

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Deep levels created by low energy electron irradiation in 4H-SiC

Journal of applied physics, 2004-11, Vol.96 (9), p.4909-4915

2004

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Recombination of free and bound excitons in GaN

Physica Status Solidi (b), 2008-09, Vol.245 (9), p.1723-1740

2008

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Development of a xenogeneic DNA vaccine program for canine malignant melanoma at the Animal Medical Center

Vaccine, 2006-05, Vol.24 (21), p.4582-4585

2006

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On-axis homoepitaxial growth on Si-face 4H–SiC substrates

Journal of crystal growth, 2008-10, Vol.310 (20), p.4424-4429

2008

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Characterization of the carrot defect in 4H-SiC epitaxial layers

Journal of crystal growth, 2010-05, Vol.312 (11), p.1828-1837

2010

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In-situ surface preparation of nominally on-axis 4H-SiC substrates

Journal of crystal growth, 2008-10, Vol.310 (20), p.4430-4437

2008

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Electrically active defects in n -type 4H–silicon carbide grown in a vertical hot-wall reactor

Journal of applied physics, 2003-04, Vol.93 (8), p.4708-4714

2003

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Delay and distortion of slow light pulses by excitons in ZnO

Physical review. B, Condensed matter and materials physics, 2011-08, Vol.84 (7), p.075202, Article 075202

2011

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Deep level defects in electron-irradiated 4H SiC epitaxial layers

Journal of applied physics, 1997-05, Vol.81 (9), p.6155-6159

1997

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Excitonic parameters of GaN studied by time-of-flight spectroscopy

Applied physics letters, 2011-09, Vol.99 (10), p.101108-101108-3

2011

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Schottky versus bipolar 3.3 kV SiC diodes

Semiconductor science and technology, 2008-12, Vol.23 (12), p.125004

2008

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Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy

Applied physics letters, 1999-07, Vol.75 (4), p.501-503

1999

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Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates

Applied physics letters, 2007-11, Vol.91 (22), p.221901-221901-3

2007

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Transient photoluminescence of shallow donor bound excitons in GaN

Physical review. B, Condensed matter and materials physics, 2010-12, Vol.82 (23), Article 235202

2010

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Canine hepatic neuroendocrine carcinoma: an immunohistochemical and electron microscopic study

Veterinary pathology, 2005-03, Vol.42 (2), p.140

2005

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Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

Journal of applied physics, 2006-05, Vol.99 (9)

2006

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The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique

Semiconductor science and technology, 2006-07, Vol.21 (7), p.952-958

2006

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Recent developments in the III-nitride materials

Physica Status Solidi (b), 2007-06, Vol.244 (6), p.1759-1768

2007

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Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift

Semiconductor science and technology, 2009-09, Vol.24 (9), p.095004-095004 (7)

2009

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Luminescence from stacking faults in 4H SiC

Applied physics letters, 2001-12, Vol.79 (24), p.3944-3946

2001

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Dislocation evolution in 4H-SiC epitaxial layers

Journal of applied physics, 2002-05, Vol.91 (10), p.6354-6360

2002

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The dominant shallow 0.225 eV acceptor in GaN

Physica Status Solidi (b), 2006-06, Vol.243 (7), p.1604-1608

2006

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Prognostic markers for canine melanocytic neoplasms: a comparative review of the literature and goals for future investigation

Veterinary pathology, 2011-01, Vol.48 (1), p.54

2011

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Properties of the main Mg-related acceptors in GaN from optical and structural studies

Evidence for two Mg related acceptors in GaN

Deep levels created by low energy electron irradiation in 4H-SiC

Recombination of free and bound excitons in GaN

Development of a xenogeneic DNA vaccine program for canine malignant melanoma at the Animal Medical Center

On-axis homoepitaxial growth on Si-face 4H–SiC substrates

Characterization of the carrot defect in 4H-SiC epitaxial layers

In-situ surface preparation of nominally on-axis 4H-SiC substrates

Electrically active defects in n -type 4H–silicon carbide grown in a vertical hot-wall reactor

Delay and distortion of slow light pulses by excitons in ZnO

Deep level defects in electron-irradiated 4H SiC epitaxial layers

Excitonic parameters of GaN studied by time-of-flight spectroscopy

Schottky versus bipolar 3.3 kV SiC diodes

Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy

Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates

Transient photoluminescence of shallow donor bound excitons in GaN

Canine hepatic neuroendocrine carcinoma: an immunohistochemical and electron microscopic study

Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique

Recent developments in the III-nitride materials

Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift

Luminescence from stacking faults in 4H SiC

Dislocation evolution in 4H-SiC epitaxial layers

The dominant shallow 0.225 eV acceptor in GaN

Prognostic markers for canine melanocytic neoplasms: a comparative review of the literature and goals for future investigation

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