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On the lattice parameters of GaN

Applied physics letters, 2007-07, Vol.91 (3), p.031911-031911-3

2007

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Infrared active phonons in monoclinic lutetium oxyorthosilicate

Journal of applied physics, 2020-03, Vol.127 (11)

2020

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Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect

Applied physics letters, 2013-11, Vol.103 (21), p.212107

2013

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Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

Applied physics letters, 2012-11, Vol.101 (19)

2012

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Infrared dielectric functions and phonon modes of high-quality ZnO films

Journal of applied physics, 2003-01, Vol.93 (1), p.126-133

2003

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Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN

Journal of applied physics, 2013-01, Vol.113 (1), p.013502

2013

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Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content AlxGa1−xN alloys determined by mid infrared spectroscopic ellipsometry and optical Hall effect

Journal of applied physics, 2017-05, Vol.121 (20)

2017

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Morphological and electronic properties of epitaxial graphene on SiC

Physica. B, Condensed matter, 2014-04, Vol.439, p.54-59

2014

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Assessing structural, free-charge carrier, and phonon properties of mixed-phase epitaxial films: The case of InN

Physical review. B, Condensed matter and materials physics, 2014-11, Vol.90 (19), p.195306, Article 195306

2014

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Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC

Carbon (New York), 2017-05, Vol.116, p.722-732

2017

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Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

Journal of applied physics, 2008-05, Vol.103 (9)

2008

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Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)

Journal of crystal growth, 2007-09, Vol.307 (2), p.334-340

2007

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Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies

Optics letters, 2015-06, Vol.40 (12), p.2688-2691

2015

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Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by infrared spectroscopic ellipsometry

Thin solid films, 2014-11, Vol.571, p.384-388

2014

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Effect of Mg doping on the structural and free-charge carrier properties of InN films

Journal of applied physics, 2014-04, Vol.115 (16)

2014

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Lattice dynamics of orthorhombic NdGaO3

Physical review. B, 2019-05, Vol.99 (18), p.184302

2019

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Structure and properties of phosphorus-carbide thin solid films

Thin solid films, 2013-12, Vol.548 (2), p.247-254

2013

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Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material

Applied physics letters, 2010-02, Vol.96 (8), p.081907-081907-3

2010

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Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)

Applied physics letters, 2013-05, Vol.102 (21), p.213116

2013

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Infrared dielectric functions and optical phonons of wurtzite YxAl1−xN (0 x 0.22)

Journal of physics. D, Applied physics, 2015-10, Vol.48 (41), p.415102

2015

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Infrared generalized ellipsometry on non-polar and superlattice group-III nitride films: strain and phonon anisotropy

Physica status solidi. A, Applications and materials science, 2008-04, Vol.205 (4), p.905-913

Darakchieva, V.

2008

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Anisotropic strain and phonon deformation potentials in GaN

Physical review. B, Condensed matter and materials physics, 2007-05, Vol.75 (19), p.195217, Article 195217

2007

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Correlation between switching to n-type conductivity and structural defects in highly Mg-doped InN

Applied physics letters, 2015-06, Vol.106 (23)

2015

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Free electron behavior in InN: On the role of dislocations and surface electron accumulation

Applied physics letters, 2009-01, Vol.94 (2), p.022109-022109-3

2009

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Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry

Applied physics letters, 2009-11, Vol.95 (20), p.202103-202103-3

2009

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On the lattice parameters of GaN

Infrared active phonons in monoclinic lutetium oxyorthosilicate

Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect

Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

Infrared dielectric functions and phonon modes of high-quality ZnO films

Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN

Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content AlxGa1−xN alloys determined by mid infrared spectroscopic ellipsometry and optical Hall effect

Morphological and electronic properties of epitaxial graphene on SiC

Assessing structural, free-charge carrier, and phonon properties of mixed-phase epitaxial films: The case of InN

Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC

Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)

Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies

Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by infrared spectroscopic ellipsometry

Effect of Mg doping on the structural and free-charge carrier properties of InN films

Lattice dynamics of orthorhombic NdGaO3

Structure and properties of phosphorus-carbide thin solid films

Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material

Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)

Infrared dielectric functions and optical phonons of wurtzite YxAl1−xN (0 x 0.22)

Infrared generalized ellipsometry on non-polar and superlattice group-III nitride films: strain and phonon anisotropy

Anisotropic strain and phonon deformation potentials in GaN

Correlation between switching to n-type conductivity and structural defects in highly Mg-doped InN

Free electron behavior in InN: On the role of dislocations and surface electron accumulation

Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry

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