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Pre-treatment technologies, and their effect on international bioenergy supply chain logistics. Techno-economic evaluation of torrefaction, fast pyrolysis and pelletisation

Energy (Oxford), 2008-08, Vol.33 (8), p.1206-1223

2008

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Deep levels created by low energy electron irradiation in 4H-SiC

Journal of applied physics, 2004-11, Vol.96 (9), p.4909-4915

2004

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Enhanced Pr3+ photoluminescence by energy transfer in SrF2 : Eu2+, Pr3+ phosphor

AIP advances, 2016-02, Vol.6 (2), p.025204-025204-12

2016

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Properties of the main Mg-related acceptors in GaN from optical and structural studies

Journal of applied physics, 2014-02, Vol.115 (5), p.053507

2014

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Study of temperature, air dew point temperature and reactant flow effects on proton exchange membrane fuel cell performances using electrochemical spectroscopy and voltammetry techniques

Journal of power sources, 2010-02, Vol.195 (4), p.984-993

2010

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Text Mining and Computational Chemistry Reveal Trends in Applications of Laser Desorption/Ionization Techniques to Small Molecules

Journal of the American Society for Mass Spectrometry, 2024-10, Vol.35 (10), p.2507-2515

2024

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On-axis homoepitaxial growth on Si-face 4H–SiC substrates

Journal of crystal growth, 2008-10, Vol.310 (20), p.4424-4429

2008

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Characterization of the carrot defect in 4H-SiC epitaxial layers

Journal of crystal growth, 2010-05, Vol.312 (11), p.1828-1837

2010

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Electrically active defects in n -type 4H–silicon carbide grown in a vertical hot-wall reactor

Journal of applied physics, 2003-04, Vol.93 (8), p.4708-4714

2003

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In-situ surface preparation of nominally on-axis 4H-SiC substrates

Journal of crystal growth, 2008-10, Vol.310 (20), p.4430-4437

2008

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Delay and distortion of slow light pulses by excitons in ZnO

Physical review. B, Condensed matter and materials physics, 2011-08, Vol.84 (7), p.075202, Article 075202

2011

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Luminescence from stacking faults in 4H SiC

Applied physics letters, 2001-12, Vol.79 (24), p.3944-3946

2001

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Schottky versus bipolar 3.3 kV SiC diodes

Semiconductor science and technology, 2008-12, Vol.23 (12), p.125004

2008

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Dislocation evolution in 4H-SiC epitaxial layers

Journal of applied physics, 2002-05, Vol.91 (10), p.6354-6360

2002

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Road traffic accidents in Scottish military veterans

Accident analysis and prevention, 2018-04, Vol.113, p.287-291

2018

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Recent developments in the III-nitride materials

Physica Status Solidi (b), 2007-06, Vol.244 (6), p.1759-1768

2007

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Mechanism of intra-shell recombination of transition metal and rare earth ions in nanostructures of II–VI compounds

Journal of alloys and compounds, 2004-10, Vol.380 (1-2), p.45-49

2004

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The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique

Semiconductor science and technology, 2006-07, Vol.21 (7), p.952-958

2006

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Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift

Semiconductor science and technology, 2009-09, Vol.24 (9), p.095004-095004 (7)

2009

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The dominant shallow 0.225 eV acceptor in GaN

Physica Status Solidi (b), 2006-06, Vol.243 (7), p.1604-1608

2006

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Structural defects in electrically degraded 4H-SiC p+/n−/n+ diodes

Applied physics letters, 2002-06, Vol.80 (25), p.4852-4854

2002

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Structural defect-related emissions in nonpolar a-plane GaN

Physica. B, Condensed matter, 2006-04, Vol.376, p.473-476

2006

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Epitaxial growth of thin 4H-SiC layers with uniform doping depth profile

Thin solid films, 2006-10, Vol.515 (2), p.460-463

2006

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Excitonic parameters of GaN studied by time-of-flight spectroscopy

Applied physics letters, 2011-09, Vol.99 (10), p.101108-101108-3

2011

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Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping

Nanotechnology, 2007-01, Vol.18 (2), p.025401-025401 (6)

2007

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Pre-treatment technologies, and their effect on international bioenergy supply chain logistics. Techno-economic evaluation of torrefaction, fast pyrolysis and pelletisation

Deep levels created by low energy electron irradiation in 4H-SiC

Enhanced Pr3+ photoluminescence by energy transfer in SrF2 : Eu2+, Pr3+ phosphor

Properties of the main Mg-related acceptors in GaN from optical and structural studies

Study of temperature, air dew point temperature and reactant flow effects on proton exchange membrane fuel cell performances using electrochemical spectroscopy and voltammetry techniques

Text Mining and Computational Chemistry Reveal Trends in Applications of Laser Desorption/Ionization Techniques to Small Molecules

On-axis homoepitaxial growth on Si-face 4H–SiC substrates

Characterization of the carrot defect in 4H-SiC epitaxial layers

Electrically active defects in n -type 4H–silicon carbide grown in a vertical hot-wall reactor

In-situ surface preparation of nominally on-axis 4H-SiC substrates

Delay and distortion of slow light pulses by excitons in ZnO

Luminescence from stacking faults in 4H SiC

Schottky versus bipolar 3.3 kV SiC diodes

Dislocation evolution in 4H-SiC epitaxial layers

Road traffic accidents in Scottish military veterans

Recent developments in the III-nitride materials

Mechanism of intra-shell recombination of transition metal and rare earth ions in nanostructures of II–VI compounds

The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique

Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift

The dominant shallow 0.225 eV acceptor in GaN

Structural defects in electrically degraded 4H-SiC p+/n−/n+ diodes

Structural defect-related emissions in nonpolar a-plane GaN

Epitaxial growth of thin 4H-SiC layers with uniform doping depth profile

Excitonic parameters of GaN studied by time-of-flight spectroscopy

Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping

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