Details

Autor(en) / Beteiligte

• Wang, Pengfei
• Mi, Minhan
• An, Sirui
• Du, Xiang
• Zhou, Yuwei
• Gong, Can
• Chen, Yilin
• Zhu, Qing
• Zhang, Meng
• Zhou, Jiuding
• Guo, Jingshu
• Zhao, Ziyue
• Ma, Xiaohua
• Hao, Yue

Titel

Evaluation of Power and Linearity at 30 GHz in AlGaN/GaN HEMT Fabricated by Integrating Transistors With Multiple Threshold Voltages

Ist Teil von

• IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1421-1427

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2024

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• In this work, using the multiple threshold voltages (multi-<inline-formula> <tex-math notation="LaTeX">{V}_{\text {Ths}}{)} </tex-math></inline-formula> coupling technology introduces an innovative approach to leverage AlGaN/GaN-based high-electron-mobility transistor (AlGaN/GaN HEMT) for high linearity millimeter-wave (mm-W) applications. As a result of optimizing the etching depth of the recessed trench (<inline-formula> <tex-math notation="LaTeX">{H}_{R} </tex-math></inline-formula>), the fabricated composite HEMT demonstrated a remarkably flat transconductance (<inline-formula> <tex-math notation="LaTeX">{G}_{m} </tex-math></inline-formula>) plateau, and well-maintained profile of small-signal characteristics as a function of gate voltage. As a consequence, at a biased drain voltage of 10 V and a frequency of 30 GHz, the composite HEMT achieved the highest ratio of output third-order intercept point (OIP3) to DC power consumption (<inline-formula> <tex-math notation="LaTeX">{P}_{\text {DC}}{)} </tex-math></inline-formula>, denoted as (OIP3/<inline-formula> <tex-math notation="LaTeX">{P}_{\text {DC}}{)} </tex-math></inline-formula>, measuring ~ 9.3 dB. Simultaneously optimizing the bias conditions, the devices showcased a remarkable combination of high one-tone saturated output power density reaching 6.5 W/mm and two-tone OIP3/<inline-formula> <tex-math notation="LaTeX">{P}_{\text {DC}} </tex-math></inline-formula> of ~ 6.1 dB, achieved at a biased drain voltage of 25 V. The experimental results provide compelling evidence of the attractiveness of the multi-<inline-formula> <tex-math notation="LaTeX">{V}_{\text {Ths}} </tex-math></inline-formula> coupling technique for millimeter wave RF transmitters.