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Stable highly conductive ZnO via reduction of Zn vacancies

Applied physics letters, 2012-09, Vol.101 (10)

2012

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Globularity‐Selected Large Molecules for a New Generation of Multication Perovskites

Advanced materials (Weinheim), 2017-10, Vol.29 (38), p.n/a

2017

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Sorption‐oxidation mechanism for the removal of arsenic (III) using Cu‐doped ZnO in an alkaline medium

Water environment research, 2023-12, Vol.95 (12), p.e10956-n/a

2023

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SiC and GaN devices – wide bandgap is not all the same

IET circuits, devices & systems, 2014-05, Vol.8 (3), p.227-236

2014

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Time‐resolved spectroscopy of luminescence in a wide gap Si‐doped β‐Ga2O3

Physica status solidi. A, Applications and materials science, 2017-03, Vol.214 (3), p.n/a

2017

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Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

IEEE transactions on power electronics, 2023-03, Vol.38 (3), p.3569-3589

2023

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Ceramic Additive Manufacturing Potential for Power Electronics Packaging

IEEE transactions on components, packaging, and manufacturing technology (2011), 2022-11, Vol.12 (11), p.1-1

2022

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Thermal stability of single crystalline alpha gallium oxide films on sapphire substrates

Physica status solidi. C, 2013-11, Vol.10 (11), p.1592-1595

2013

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Polymer Schottky contact on O-polar ZnO with silane coupling agent as surface protective layer

Applied physics letters, 2008-07, Vol.93 (1)

2008

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Results From Testing of 145 3D Position-Sensitive, Pixelated CdZnTe Detectors

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.3332-3338

2012

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Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

Microelectronic engineering, 2018-02, Vol.187-188, p.66-77

2018

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10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field

IEEE transactions on power electronics, 2020-06, Vol.35 (6), p.6050-6060

2020

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inducting into the future

Electronics letters, 2016-06, Vol.52 (13), p.1088-1088

2016

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Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs

IEEE transactions on electron devices, 2018-01, Vol.65 (1), p.45-50

2018

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Overview of Dual-Active-Bridge Isolated Bidirectional DC-DC Converter for High-Frequency-Link Power-Conversion System

IEEE transactions on power electronics, 2014-08, Vol.29 (8), p.4091-4106

2014

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Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications

1, 2022

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Stability and Reliability of Lateral GaN Power Field-Effect Transistors

IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.4578-4590

2019

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Influence of High-Energy Proton Irradiation on β‑Ga2O3 Nanobelt Field-Effect Transistors

ACS applied materials & interfaces, 2017-11, Vol.9 (46), p.40471-40476

2017

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Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs

IEEE transactions on electron devices, 2018-06, Vol.65 (6), p.2454-2460

2018

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Gallium oxide films deposition by RF magnetron sputtering; a detailed analysis on the effects of deposition pressure and sputtering power and annealing

Ceramics international, 2021-01, Vol.47 (2), p.1721-1727

2021

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Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

IEEE electron device letters, 2015-10, Vol.36 (10), p.1001-1003

2015

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Ultra-Wide Bandgap Semiconductor Materials

1, 2019

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Correlated d ferromagnetism and photoluminescence in undoped ZnO nanowires

Applied physics letters, 2010-03, Vol.96 (11), p.112511

2010

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Erratum to "Comparison of Wide-Band-Gap Technologies for Soft-Switching Losses at High Frequencies" [Dec 20 12595-12600]

IEEE transactions on power electronics, 2021-02, Vol.36 (2), p.2444-2445

2021

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Erratum to "Modeling Avalanche Induced Degradation for 4H-SiC Power MOSFETs"

IEEE transactions on power electronics, 2021-02, Vol.36 (2), p.2447-2447

2021

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Volltext

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Stable highly conductive ZnO via reduction of Zn vacancies

Globularity‐Selected Large Molecules for a New Generation of Multication Perovskites

Sorption‐oxidation mechanism for the removal of arsenic (III) using Cu‐doped ZnO in an alkaline medium

SiC and GaN devices – wide bandgap is not all the same

Time‐resolved spectroscopy of luminescence in a wide gap Si‐doped β‐Ga2O3

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Ceramic Additive Manufacturing Potential for Power Electronics Packaging

Thermal stability of single crystalline alpha gallium oxide films on sapphire substrates

Polymer Schottky contact on O-polar ZnO with silane coupling agent as surface protective layer

Results From Testing of 145 3D Position-Sensitive, Pixelated CdZnTe Detectors

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field

inducting into the future

Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs

Overview of Dual-Active-Bridge Isolated Bidirectional DC-DC Converter for High-Frequency-Link Power-Conversion System

Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

Influence of High-Energy Proton Irradiation on β‑Ga2O3 Nanobelt Field-Effect Transistors

Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs

Gallium oxide films deposition by RF magnetron sputtering; a detailed analysis on the effects of deposition pressure and sputtering power and annealing

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Ultra-Wide Bandgap Semiconductor Materials

Correlated d ferromagnetism and photoluminescence in undoped ZnO nanowires

Erratum to "Comparison of Wide-Band-Gap Technologies for Soft-Switching Losses at High Frequencies" [Dec 20 12595-12600]

Erratum to "Modeling Avalanche Induced Degradation for 4H-SiC Power MOSFETs"

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