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Wide Bandgap Semiconductor Based Micro/Nano Devices

Seo, Jung-Hun

2019

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Wide Bandgap Based Devices: Design, Fabrication and Applications

Medjdoub, Farid

2021

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Ceramic Additive Manufacturing Potential for Power Electronics Packaging

IEEE transactions on components, packaging, and manufacturing technology (2011), 2022-11, Vol.12 (11), p.1-1

2022

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Monolithic Comparator and Sawtooth Generator of AlGaN/GaN MIS-HEMTs With Threshold Voltage Modulation for High-Temperature Applications

IEEE transactions on electron devices, 2021-06, Vol.68 (6), p.2673-2679

2021

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Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

Verzellesi, Giovanni

2022

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Degradation and Mechanism of D-Mode AlGaN/GaN MIS-HEMTs Under the Combination Action of Hydrogen and HTGB Stress

IEEE transactions on electron devices, 2023-01, Vol.70 (1), p.1-7

2023

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Examination of Trapping Effects on Single-Event Transients in GaN HEMTs

IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.1-1

2023

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High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5337-5342

2018

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Single Pulse Charge Pumping Measurements on GaN MOS-HEMTs: Fast and Reliable Extraction of Interface Traps Density

IEEE transactions on electron devices, 2020-02, Vol.67 (2), p.444-448

2020

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Compact Modeling of Static and Transient Effects of Buffer Traps in GaN HEMTs

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.999-1005

2022

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Short Circuit Capability Characterization and Analysis of p-GaN Gate High-Electron-Mobility Transistors Under Single and Repetitive Tests

IEEE transactions on industrial electronics (1982), 2021-09, Vol.68 (9), p.8798-8807

2021

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Quadruple Gate-Recessed AlGaN/GaN Fin-Nanochannel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.42-48

2021

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A Study of the Gate-Stack Small-Signal Model and Determination of Interface Traps in GaN-Based MIS-HEMTs

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1507-1512

2021

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Memristive Properties of GaN HEMTs Containing Deep‐Level Traps

physica status solidi (b), 2019-05, Vol.256 (5), p.n/a

2019

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GaN High‐Electron‐Mobility Transistors with Superconducting Nb Gates for Low‐Noise Cryogenic Applications

Physica status solidi. A, Applications and materials science, 2023-04, Vol.220 (8), p.n/a

2023

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Fabrication of High-Uniformity and High-Reliability Si3N4/AlGaN/GaN MIS-HEMTs With Self-Terminating Dielectric Etching Process in a 150-mm Si Foundry

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4814-4819

2018

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Volltext

Pt-Decorated Graphene Gate AlGaN/GaN MIS-HEMT for Ultrahigh Sensitive Hydrogen Gas Detection

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1255-1261

2021

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Volltext

Suppression of Gate Leakage Current in Ka-Band AlGaN/GaN HEMT With 5-nm SiN Gate Dielectric Grown by Plasma-Enhanced ALD

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.49-52

2021

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Extraction and Optimization of Compact Drain Current Model Parameters for GaN High‐Electron‐Mobility Transistors

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Thermally Grown TiO2 and Al2O3 for GaN-Based MOS-HEMTs

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3725-3731

2018

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Research Progress in Breakdown Enhancement for GaN-Based High-Electron-Mobility Transistors

Electronics (Basel), 2023-10, Vol.12 (21), p.4435

2023

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Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT

Physica status solidi. A, Applications and materials science, 2018-06, Vol.215 (11), p.n/a

2018

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New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors

Electronics (Basel), 2023-07, Vol.12 (14), p.3044

2023

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Temperature-Dependent Hot Electron Effects and Degradation Mechanisms in 650-V GaN-Based MIS-HEMT Power Devices Under Hard Switching Operations

IEEE journal of emerging and selected topics in power electronics, 2021-10, Vol.9 (5), p.6424-6431

2021

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Creation of Two‐Dimensional Electron Gas and Role of Surface Donors in III‐N Metal‐Oxide‐Semiconductor High‐Electron Mobility Transistors

Physica status solidi. A, Applications and materials science, 2018-12, Vol.215 (24), p.n/a

2018

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Wide Bandgap Semiconductor Based Micro/Nano Devices

Wide Bandgap Based Devices: Design, Fabrication and Applications

Ceramic Additive Manufacturing Potential for Power Electronics Packaging

Monolithic Comparator and Sawtooth Generator of AlGaN/GaN MIS-HEMTs With Threshold Voltage Modulation for High-Temperature Applications

Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

Degradation and Mechanism of D-Mode AlGaN/GaN MIS-HEMTs Under the Combination Action of Hydrogen and HTGB Stress

Examination of Trapping Effects on Single-Event Transients in GaN HEMTs

High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric

Single Pulse Charge Pumping Measurements on GaN MOS-HEMTs: Fast and Reliable Extraction of Interface Traps Density

Compact Modeling of Static and Transient Effects of Buffer Traps in GaN HEMTs

Short Circuit Capability Characterization and Analysis of p-GaN Gate High-Electron-Mobility Transistors Under Single and Repetitive Tests

Quadruple Gate-Recessed AlGaN/GaN Fin-Nanochannel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors

A Study of the Gate-Stack Small-Signal Model and Determination of Interface Traps in GaN-Based MIS-HEMTs

Memristive Properties of GaN HEMTs Containing Deep‐Level Traps

GaN High‐Electron‐Mobility Transistors with Superconducting Nb Gates for Low‐Noise Cryogenic Applications

Fabrication of High-Uniformity and High-Reliability Si3N4/AlGaN/GaN MIS-HEMTs With Self-Terminating Dielectric Etching Process in a 150-mm Si Foundry

Pt-Decorated Graphene Gate AlGaN/GaN MIS-HEMT for Ultrahigh Sensitive Hydrogen Gas Detection

Suppression of Gate Leakage Current in Ka-Band AlGaN/GaN HEMT With 5-nm SiN Gate Dielectric Grown by Plasma-Enhanced ALD

Extraction and Optimization of Compact Drain Current Model Parameters for GaN High‐Electron‐Mobility Transistors

Thermally Grown TiO2 and Al2O3 for GaN-Based MOS-HEMTs

Research Progress in Breakdown Enhancement for GaN-Based High-Electron-Mobility Transistors

Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT

New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors

Temperature-Dependent Hot Electron Effects and Degradation Mechanisms in 650-V GaN-Based MIS-HEMT Power Devices Under Hard Switching Operations

Creation of Two‐Dimensional Electron Gas and Role of Surface Donors in III‐N Metal‐Oxide‐Semiconductor High‐Electron Mobility Transistors

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