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Compensation Dopant-Free GaN-on-Si HEMTs With a Polarization Engineered Buffer for RF Applications

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1-6

2023

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AC Excitation to Mitigate Drift in AlGaN/GaN HEMT-Based Sensors

IEEE sensors journal, 2023-06, Vol.23 (12), p.12947-12952

2023

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Radiation Response of AlGaN-Channel HEMTs

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.344-351

2019

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Inverse Piezoelectric and Trap Effects With Temperature Dependence in AlGaN/GaN HEMTs Under Narrowband Microwave Pulses

IEEE transactions on electromagnetic compatibility, 2023-06, Vol.65 (3), p.794-803

2023

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Edge Termination for III-Nitride Vertical Power Devices Using Polarization Engineering

IEEE transactions on electron devices, 2020-02, Vol.67 (2), p.571-575

2020

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Design and development of an AlGaN/GaN heterostructure nano-ATT oscillator: experimental feasibility studies in THz domain

Micro & nano letters, 2020-01, Vol.15 (1), p.41-46

2020

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Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4439-4445

2013

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3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

IEEE electron device letters, 2020-08, Vol.41 (8), p.1177-1180

2020

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Investigation of Wide- and Ultrawide-Bandgap Semiconductors From Impact-Ionization Coefficients

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.3999-4005

2020

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Electrical Characterization and Modeling of GaN HEMTs at Cryogenic Temperatures

IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.6016-6022

2022

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GaN-based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels

IET power electronics, 2018-04, Vol.11 (4), p.689-694

2018

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Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT

IEEE electron device letters, 2021-06, Vol.42 (6), p.796-799

2021

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Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm

IEEE electron device letters, 2019-08, Vol.40 (8), p.1245-1248

2019

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High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1513-1517

2021

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Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5365-5372

2018

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Radiation Effects in AlGaN/GaN HEMTs

IEEE transactions on nuclear science, 2022-05, Vol.69 (5), p.1-1

2022

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ε-Ga₂O₃: A Promising Candidate for High-Electron-Mobility Transistors

IEEE electron device letters, 2020-07, Vol.41 (7), p.1052-1055

2020

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Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4602-4605

2020

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Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

IEEE electron device letters, 2012-04, Vol.33 (4), p.516-518

2012

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Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

physica status solidi (b), 2021-11, Vol.258 (11), p.n/a

2021

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650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

IEEE electron device letters, 2018-02, Vol.39 (2), p.260-263

2018

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Design of a β-Ga2O3 Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4842-4848

2020

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Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

IEEE electron device letters, 2019-02, Vol.40 (2), p.275-278

2019

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2.69 kV/2.11 mΩ⋅cm and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

IEEE electron device letters, 2023-01, Vol.44 (1), p.13-16

2023

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Understanding the Threshold Voltage Instability During OFF-State Stress in p-GaN HEMTs

IEEE electron device letters, 2019-08, Vol.40 (8), p.1253-1256

2019

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Compensation Dopant-Free GaN-on-Si HEMTs With a Polarization Engineered Buffer for RF Applications

AC Excitation to Mitigate Drift in AlGaN/GaN HEMT-Based Sensors

Radiation Response of AlGaN-Channel HEMTs

Inverse Piezoelectric and Trap Effects With Temperature Dependence in AlGaN/GaN HEMTs Under Narrowband Microwave Pulses

Edge Termination for III-Nitride Vertical Power Devices Using Polarization Engineering

Design and development of an AlGaN/GaN heterostructure nano-ATT oscillator: experimental feasibility studies in THz domain

Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors

3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

Investigation of Wide- and Ultrawide-Bandgap Semiconductors From Impact-Ionization Coefficients

Electrical Characterization and Modeling of GaN HEMTs at Cryogenic Temperatures

GaN-based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels

Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT

Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm

High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer

Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

Radiation Effects in AlGaN/GaN HEMTs

ε-Ga₂O₃: A Promising Candidate for High-Electron-Mobility Transistors

Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

Design of a β-Ga2O3 Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown

Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

2.69 kV/2.11 mΩ⋅cm and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

Understanding the Threshold Voltage Instability During OFF-State Stress in p-GaN HEMTs

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