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Inverse Piezoelectric and Trap Effects With Temperature Dependence in AlGaN/GaN HEMTs Under Narrowband Microwave Pulses

IEEE transactions on electromagnetic compatibility, 2023-06, Vol.65 (3), p.794-803

2023

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Compensation Dopant-Free GaN-on-Si HEMTs With a Polarization Engineered Buffer for RF Applications

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1-6

2023

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Edge Termination for III-Nitride Vertical Power Devices Using Polarization Engineering

IEEE transactions on electron devices, 2020-02, Vol.67 (2), p.571-575

2020

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AC Excitation to Mitigate Drift in AlGaN/GaN HEMT-Based Sensors

IEEE sensors journal, 2023-06, Vol.23 (12), p.12947-12952

2023

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Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4439-4445

2013

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Radiation Response of AlGaN-Channel HEMTs

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.344-351

2019

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3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

IEEE electron device letters, 2020-08, Vol.41 (8), p.1177-1180

2020

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Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT

IEEE electron device letters, 2021-06, Vol.42 (6), p.796-799

2021

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Design and development of an AlGaN/GaN heterostructure nano-ATT oscillator: experimental feasibility studies in THz domain

Micro & nano letters, 2020-01, Vol.15 (1), p.41-46

2020

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High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1513-1517

2021

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Radiation Effects in AlGaN/GaN HEMTs

IEEE transactions on nuclear science, 2022-05, Vol.69 (5), p.1-1

2022

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Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5365-5372

2018

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Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4602-4605

2020

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ε-Ga₂O₃: A Promising Candidate for High-Electron-Mobility Transistors

IEEE electron device letters, 2020-07, Vol.41 (7), p.1052-1055

2020

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Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

IEEE electron device letters, 2012-04, Vol.33 (4), p.516-518

2012

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650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

IEEE electron device letters, 2018-02, Vol.39 (2), p.260-263

2018

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Volltext

Design of a β-Ga2O3 Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4842-4848

2020

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Volltext

Understanding the Threshold Voltage Instability During OFF-State Stress in p-GaN HEMTs

IEEE electron device letters, 2019-08, Vol.40 (8), p.1253-1256

2019

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Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

IEEE electron device letters, 2019-02, Vol.40 (2), p.275-278

2019

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2.69 kV/2.11 mΩ⋅cm and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

IEEE electron device letters, 2023-01, Vol.44 (1), p.13-16

2023

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P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

IEEE electron device letters, 2021-01, Vol.42 (1), p.82-85

2021

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Hot Electron-Induced Bremsstrahlung Emission in AlGaN/GaN Superlattice Castellated Field Effect Transistors

IEEE electron device letters, 2023-11, Vol.44 (11), p.1821-1824

2023

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High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

IEEE electron device letters, 2016-12, Vol.37 (12), p.1617-1620

2016

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Improved RF Performances by Applying Asymmetric Passivation and Air-Bridged Field Plate in AlGaN/GaN HEMTs With Reliability-Based Simulation

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.468-475

2024

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Simulation Study of an Ultralow Switching Loss p-GaN Gate HEMT With Dynamic Charge Storage Mechanism

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.175-183

2021

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Inverse Piezoelectric and Trap Effects With Temperature Dependence in AlGaN/GaN HEMTs Under Narrowband Microwave Pulses

Compensation Dopant-Free GaN-on-Si HEMTs With a Polarization Engineered Buffer for RF Applications

Edge Termination for III-Nitride Vertical Power Devices Using Polarization Engineering

AC Excitation to Mitigate Drift in AlGaN/GaN HEMT-Based Sensors

Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors

Radiation Response of AlGaN-Channel HEMTs

3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT

Design and development of an AlGaN/GaN heterostructure nano-ATT oscillator: experimental feasibility studies in THz domain

High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer

Radiation Effects in AlGaN/GaN HEMTs

Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress

ε-Ga₂O₃: A Promising Candidate for High-Electron-Mobility Transistors

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

Design of a β-Ga2O3 Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown

Understanding the Threshold Voltage Instability During OFF-State Stress in p-GaN HEMTs

Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

2.69 kV/2.11 mΩ⋅cm and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Hot Electron-Induced Bremsstrahlung Emission in AlGaN/GaN Superlattice Castellated Field Effect Transistors

High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

Improved RF Performances by Applying Asymmetric Passivation and Air-Bridged Field Plate in AlGaN/GaN HEMTs With Reliability-Based Simulation

Simulation Study of an Ultralow Switching Loss p-GaN Gate HEMT With Dynamic Charge Storage Mechanism

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