Details

Autor(en) / Beteiligte

• Duffy, S. J.
• Benbakhti, B.
• Zhang, W.
• Ahmeda, K.
• Kalna, K.
• Boucherta, M.
• Mattalah, M.
• Chahdi, H. O.
• Bourzgui, N. E.
• Soltani, A.

Titel

A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs

Ist Teil von

• IEEE transactions on electron devices, 2020-05, Vol.67 (5), p.1-7

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2020

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN high-electron mobility transistors (HEMTs) under a normal device operation: self-heating and charge trapping. Our unique approach investigates charge trapping using both source (IS) and drain (ID) transient currents for the first time. Two types of charge-trapping mechanisms are identified: 1) bulk charge trapping occurring on a timescale of less than 1 ms and 2) surface charge trapping with a time constant larger than a millisecond. Through monitoring the difference between IS and ID, a bulk charge-trapping time constant is found to be independent of both drain (VDS) and gate (VGS) biases. Surface charge trapping is found to have a much greater impact on slow degradation than bulk trapping and self-heating. At a short timescale (<1 ms), the RF performance is mainly restricted by both bulk charge-trapping and self-heating effects. However, at a longer time (>1 ms), the dynamic on-resistance degradation is predominantly limited by surface charge trapping.