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Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs

IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3376-3381

2019

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Correct Equations for Minimum Noise Measure of a Microwave Transistor Amplifier

IEEE transactions on microwave theory and techniques, 2022-02, Vol.70 (2), p.1361-1366

2022

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Volltext

Monolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System

IEEE photonics technology letters, 2011-09, Vol.23 (17), p.1189-1191

2011

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Volltext

MoOx/Au Schottky‐Gated Field‐Effect Transistors and Their Fast Inverters

Advanced electronic materials, 2019-08, Vol.5 (8), p.n/a

2019

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Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2270-2275

2020

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Cause and Effects of OFF-State Degradation in Hydrogen-Terminated Diamond MESFETs

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4021-4026

2020

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Volltext

Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n‑Type Doping, and Field-Effect Transistor Using CaSnO3

ACS nano, 2023-09, Vol.17 (17), p.16912-16922

2023

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Junctionless Field-Effect Transistors: Design, Modeling, and Simulation

1st edition., 2019

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K -Band CMOS-Based MESFET Cascode Amplifiers

IEEE microwave and wireless components letters, 2018-07, Vol.28 (7), p.609-611

2018

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Volltext

A novel SOI MESFET to spread the potential contours towards the drain

International journal of electronics, 2020-09, Vol.107 (9), p.1506-1523

2020

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A Novel High-Breakdown-Voltage SOI MESFET by Modified Charge Distribution

IEEE transactions on electron devices, 2012-05, Vol.59 (5), p.1255-1262

2012

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Volltext

A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

Micromachines (Basel), 2021-04, Vol.12 (5), p.488

2021

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Two-Dimensional Numerical Simulation of Bottom-Gate and Dual-Gate Amorphous In-Ga-Zn-O MESFETs

IEEE electron device letters, 2014-01, Vol.35 (1), p.75-77

2014

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Volltext

32 dBm Power Amplifier on 45 nm SOI CMOS

IEEE microwave and wireless components letters, 2013-03, Vol.23 (3), p.161-163

2013

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Volltext

Negative resistance amplifier circuit using GaAsFET modelled single MESFET

Telkomnika, 2020-02, Vol.18 (1), p.179-190

2020

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Ion-Induced Charge-Collection Transients in p-Channel AlGaSb/InGaSb Heterojunction Field-Effect Transistors

IEEE transactions on nuclear science, 2014-08, Vol.61 (4), p.1510-1515

2014

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Volltext

A Novel SOI MESFET to Improve the Equipotential Contour Distributions by Using an Oxide Barrier

SILICON, 2019-04, Vol.11 (2), p.879-889

2019

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High-Voltage and RF Performance of SOI MESFET Using Controlled Electric Field Distribution

IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2842-2845

2012

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Volltext

Comparison of ZnO-Based JFET, MESFET, and MISFET

IEEE transactions on electron devices, 2013-06, Vol.60 (6), p.1828-1833

2013

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Volltext

Device technologies for RF front-end circuits in next-generation wireless communications

Proceedings of the IEEE, 2004-02, Vol.92 (2), p.354-375

2004

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Volltext

Persistent Current Reduction in Metal-Semiconductor FETs With a ZnCoO Channel in an External Magnetic Field

IEEE electron device letters, 2013-10, Vol.34 (10), p.1271-1273

2013

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Volltext

Light and Temperature Stability of Fully Transparent ZnO-Based Inverter Circuits

IEEE electron device letters, 2011-04, Vol.32 (4), p.515-517

2011

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Volltext

Scaling SOI MESFETs to 150-nm CMOS Technologies

IEEE transactions on electron devices, 2011-06, Vol.58 (6), p.1628-1634

2011

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Volltext

SOI MESFETs Fabricated Using Fully Depleted CMOS Technologies

IEEE electron device letters, 2009-06, Vol.30 (6), p.678-680

2009

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Volltext

The Silicon Plates in Buried Oxide for Enhancement of the Breakdown Voltage in SOI MESFET

Applied Mechanics and Materials, 2014-04, Vol.538 (Mechanical, Electronic and Engineering Technologies (ICMEET 2014)), p.58-61

2014

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Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs

Correct Equations for Minimum Noise Measure of a Microwave Transistor Amplifier

Monolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System

MoOx/Au Schottky‐Gated Field‐Effect Transistors and Their Fast Inverters

Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length

Cause and Effects of OFF-State Degradation in Hydrogen-Terminated Diamond MESFETs

Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n‑Type Doping, and Field-Effect Transistor Using CaSnO3

Junctionless Field-Effect Transistors: Design, Modeling, and Simulation

K -Band CMOS-Based MESFET Cascode Amplifiers

A novel SOI MESFET to spread the potential contours towards the drain

A Novel High-Breakdown-Voltage SOI MESFET by Modified Charge Distribution

A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

Two-Dimensional Numerical Simulation of Bottom-Gate and Dual-Gate Amorphous In-Ga-Zn-O MESFETs

32 dBm Power Amplifier on 45 nm SOI CMOS

Negative resistance amplifier circuit using GaAsFET modelled single MESFET

Ion-Induced Charge-Collection Transients in p-Channel AlGaSb/InGaSb Heterojunction Field-Effect Transistors

A Novel SOI MESFET to Improve the Equipotential Contour Distributions by Using an Oxide Barrier

High-Voltage and RF Performance of SOI MESFET Using Controlled Electric Field Distribution

Comparison of ZnO-Based JFET, MESFET, and MISFET

Device technologies for RF front-end circuits in next-generation wireless communications

Persistent Current Reduction in Metal-Semiconductor FETs With a ZnCoO Channel in an External Magnetic Field

Light and Temperature Stability of Fully Transparent ZnO-Based Inverter Circuits

Scaling SOI MESFETs to 150-nm CMOS Technologies

SOI MESFETs Fabricated Using Fully Depleted CMOS Technologies

The Silicon Plates in Buried Oxide for Enhancement of the Breakdown Voltage in SOI MESFET

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