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Extraction of interface trap density of Al2O3/AlGaN/GaN MIS heterostructure capacitance

physica status solidi (b), 2015-05, Vol.252 (5), p.996-1000

2015

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An experimental study of fuel injection strategies in CAI gasoline engine

Experimental thermal and fluid science, 2011-01, Vol.35 (1), p.243-252

2011

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Evaluation of the combustion process in a spark-ignition engine based on the unrepeatability of the maximum pressure

IOP conference series. Materials Science and Engineering, 2018-09, Vol.421 (4), p.42048

2018

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Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

Journal of applied physics, 2010-05, Vol.107 (10)

2010

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Low- and high-frequency capacitance of aluminum gallium nitride/gallium nitride heterostructures with interface traps

Materials science in semiconductor processing, 2015-03, Vol.31, p.525-529

2015

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Temporary Stability of Compressive Strength of Flow and Universal Type LC PMCCS Materials

Advances in materials science, 2018-09, Vol.18 (3), p.22-33

2018

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Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement

Applied physics letters, 2021-01, Vol.118 (4)

2021

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Ultrafast and highly sensitive photodetectors with recessed electrodes fabricated on low-temperature-grown GaAs

IEEE photonics technology letters, 2006-04, Vol.18 (7), p.820-822

2006

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Ultrafast low-temperature-grown epitaxial GaAs photodetectors transferred on flexible plastic substrates

IEEE photonics technology letters, 2005-08, Vol.17 (8), p.1725-1727

2005

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Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes

Applied physics letters, 2016-02, Vol.108 (6)

2016

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Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer

Semiconductor science and technology, 2021-09, Vol.36 (9), p.95040

2021

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Performance optimization of GaAs-based photomixers as sources of THz radiation

Applied physics. A, Materials science & processing, 2007-06, Vol.87 (3), p.563-567

2007

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Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis

Applied physics letters, 2009-06, Vol.94 (22), p.223512-223512-3

2009

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Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis

Applied physics letters, 2008-09, Vol.93 (12), p.124103

2008

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Output Power Improvement in MSM Photomixers by Modified Finger Contacts Configuration

IEEE photonics technology letters, 2009-02, Vol.21 (3), p.146-148

2009

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Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method

IEEE transactions on electron devices, 2002-08, Vol.49 (8), p.1496-1498

2002

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Volltext

Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs

IEEE transactions on electron devices, 2006-07, Vol.53 (7), p.1517-1523

2006

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Volltext

Capacitive microsensors for biochemical sensing based on porous silicon technology

Sensors and actuators. B, Chemical, 2000-06, Vol.64 (1), p.59-64

2000

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Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2006-12, Vol.53 (12), p.2932-2941

2006

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Temperature-induced instability of the threshold voltage in GaN-based heterostructure field-effect transistors

Semiconductor science and technology, 2017-02, Vol.32 (2), p.25017

2017

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A novel two-color photodetector based on an InAlAs-InGaAs HEMT Layer structure

IEEE photonics technology letters, 2004-11, Vol.16 (11), p.2541-2543

2004

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Improved transport properties of Al2O3∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor

Applied physics letters, 2007-03, Vol.90 (12)

2007

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Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction

Semiconductor science and technology, 2017-03, Vol.32 (4)

2017

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Transport properties and barrier height evaluation in Ni/InAlN/GaN Schottky diodes

Journal of applied physics, 2011-03, Vol.109 (6), p.063711-063711-5

2011

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Defect states characterization of non-annealed and annealed ZrO2/InAlN/GaN structures by capacitance measurements

Applied physics letters, 2013-02, Vol.102 (6)

2013

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Extraction of interface trap density of Al2O3/AlGaN/GaN MIS heterostructure capacitance

An experimental study of fuel injection strategies in CAI gasoline engine

Evaluation of the combustion process in a spark-ignition engine based on the unrepeatability of the maximum pressure

Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

Low- and high-frequency capacitance of aluminum gallium nitride/gallium nitride heterostructures with interface traps

Temporary Stability of Compressive Strength of Flow and Universal Type LC PMCCS Materials

Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement

Ultrafast and highly sensitive photodetectors with recessed electrodes fabricated on low-temperature-grown GaAs

Ultrafast low-temperature-grown epitaxial GaAs photodetectors transferred on flexible plastic substrates

Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes

Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer

Performance optimization of GaAs-based photomixers as sources of THz radiation

Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis

Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis

Output Power Improvement in MSM Photomixers by Modified Finger Contacts Configuration

Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method

Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs

Capacitive microsensors for biochemical sensing based on porous silicon technology

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

Temperature-induced instability of the threshold voltage in GaN-based heterostructure field-effect transistors

A novel two-color photodetector based on an InAlAs-InGaAs HEMT Layer structure

Improved transport properties of Al2O3∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor

Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction

Transport properties and barrier height evaluation in Ni/InAlN/GaN Schottky diodes

Defect states characterization of non-annealed and annealed ZrO2/InAlN/GaN structures by capacitance measurements

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