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Quantitative Prediction of Ion-Induced Single-Event Transients in an Operational Amplifier Using a Quasi-Bessel Beam Pulsed-Laser Approach

IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.1-1

2023

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2018 IEEE Nuclear and Space Radiation Effects Conference Awards Comments by the Chairman

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.11-12

Buchner, Stephen P.

2019

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Radiation Hardened Millimeter-Wave Receiver Implemented in 90-nm, SiGe HBT Technology

IEEE transactions on nuclear science, 2022-10, Vol.69 (10), p.2154-2161

2022

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Voltage-Controlled Oscillator Utilizing Inverse-Mode SiGe-HBT Biasing Circuit for the Mitigation of Single-Event Effects

IEEE transactions on nuclear science, 2022-06, Vol.69 (6), p.1242-1248

2022

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Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits

Sensors (Basel, Switzerland), 2020-05, Vol.20 (9), p.2581

2020

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Optical Single-Event Transients Induced in Integrated Silicon-Photonic Waveguides by Two-Photon Absorption

IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.785-792

2021

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Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting From Heavy-Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation

IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.626-633

2021

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Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.359-367

2019

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Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI

IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.71-80

2020

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The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.406-414

2017

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Tradeoffs Between RF Performance and SET Robustness in Low-Noise Amplifiers in a Complementary SiGe BiCMOS Platform

IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1521-1529

2020

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A Dosimetry Methodology for Two-Photon Absorption Induced Single-Event Effects Measurements

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3416-3423

2014

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Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach-Zehnder Modulator in a Si/SiGe Integrated Photonics Platform

IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.260-267

2020

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An Electrostatic Discharge Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.426-431

2018

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Spatial Mapping of Pristine and Irradiated AlGaN/GaN HEMTs With UV Single-Photon Absorption Single-Event Transient Technique

IEEE transactions on nuclear science, 2016-08, Vol.63 (4), p.1995-2001

2016

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Best Practices for Using Electrostatic Discharge Protection Techniques for Single-Event Transient Mitigation

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.240-247

2019

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The Effects of Temperature on the Single-Event Transient Response of a High-Voltage (>30 V) Complementary SiGe-on-SOI Technology

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.389-396

2019

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p-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.391-398

2018

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On the Application of Inverse-Mode SiGe HBTs in RF Receivers for the Mitigation of Single-Event Transients

IEEE transactions on nuclear science, 2017-05, Vol.64 (5), p.1142-1150

2017

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Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3218-3225

2014

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An Investigation of Single-Event Effects and Potential SEU Mitigation Strategies in Fourth-Generation, 90 nm SiGe BiCMOS

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4175-4183

2013

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Simulation of Light-Matter Interaction and Two-Photon Absorption Induced Charge Deposition by Ultrashort Optical Pulses in Silicon

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3504-3511

2014

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Impact of Cumulative Irradiation Degradation and Circuit Board Design on the Parameters of ASETs Induced in Discrete BJT-based Circuits

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.2732-2742

2015

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Correlation of Dynamic Parameter Modification and ASET Sensitivity in a Shunt Voltage Reference

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2756-2763

2012

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Single-Event Effects in High-Frequency Linear Amplifiers: Experiment and Analysis

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.125-132

2017

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Quantitative Prediction of Ion-Induced Single-Event Transients in an Operational Amplifier Using a Quasi-Bessel Beam Pulsed-Laser Approach

2018 IEEE Nuclear and Space Radiation Effects Conference Awards Comments by the Chairman

Radiation Hardened Millimeter-Wave Receiver Implemented in 90-nm, SiGe HBT Technology

Voltage-Controlled Oscillator Utilizing Inverse-Mode SiGe-HBT Biasing Circuit for the Mitigation of Single-Event Effects

Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits

Optical Single-Event Transients Induced in Integrated Silicon-Photonic Waveguides by Two-Photon Absorption

Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting From Heavy-Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation

Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs

Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI

The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs

Tradeoffs Between RF Performance and SET Robustness in Low-Noise Amplifiers in a Complementary SiGe BiCMOS Platform

A Dosimetry Methodology for Two-Photon Absorption Induced Single-Event Effects Measurements

Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach-Zehnder Modulator in a Si/SiGe Integrated Photonics Platform

An Electrostatic Discharge Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology

Spatial Mapping of Pristine and Irradiated AlGaN/GaN HEMTs With UV Single-Photon Absorption Single-Event Transient Technique

Best Practices for Using Electrostatic Discharge Protection Techniques for Single-Event Transient Mitigation

The Effects of Temperature on the Single-Event Transient Response of a High-Voltage (>30 V) Complementary SiGe-on-SOI Technology

p-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform

On the Application of Inverse-Mode SiGe HBTs in RF Receivers for the Mitigation of Single-Event Transients

Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs

An Investigation of Single-Event Effects and Potential SEU Mitigation Strategies in Fourth-Generation, 90 nm SiGe BiCMOS

Simulation of Light-Matter Interaction and Two-Photon Absorption Induced Charge Deposition by Ultrashort Optical Pulses in Silicon

Impact of Cumulative Irradiation Degradation and Circuit Board Design on the Parameters of ASETs Induced in Discrete BJT-based Circuits

Correlation of Dynamic Parameter Modification and ASET Sensitivity in a Shunt Voltage Reference

Single-Event Effects in High-Frequency Linear Amplifiers: Experiment and Analysis

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