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Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors

IEEE transactions on industrial electronics (1982), 2016-04, Vol.63 (4), p.1995-2004

2016

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Foreword Special Issue on Wide Bandgap Power Switching Devices for Energy Efficiency and Renewable Energy Integration

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.245-247

2015

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Volltext

Design, process, and performance of all-epitaxial normally-off SiC JFETs

Physica status solidi. A, Applications and materials science, 2009-10, Vol.206 (10), p.2308-2328

2009

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Characterization of HfO2 films deposited on 4H-SiC by atomic layer deposition

Journal of applied physics, 2007-06, Vol.101 (12), p.124105

2007

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Distributions of electric parameters in MOS structures on 3C-SiC substrate

Central European journal of physics, 2013, Vol.11 (2), p.231-238

2013

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Static and Dynamic Performance of Charge-Carrier Lifetime-Tailored High-Voltage SiC p-i-n Diodes With Capacitively Assisted Switching

IEEE transactions on power electronics, 2022-10, Vol.37 (10), p.12065-12079

2022

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Volltext

Comparison of Thermal Stress During Short-Circuit in Different Types of 1.2-kV SiC Transistors Based on Experiments and Simulations

IEEE transactions on industrial electronics (1982), 2021-03, Vol.68 (3), p.2608-2616

2021

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Volltext

High-Power Modular Multilevel Converters With SiC JFETs

IEEE transactions on power electronics, 2012-01, Vol.27 (1), p.28-36

2012

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Volltext

Localized Lifetime Control of 10 kV 4H-SiC PiN Diodes by MeV Proton Implantation

Materials science forum, 2022, Vol.1062, p.442-446

2022

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Analysis and Experimental Verification of the Influence of Fabrication Process Tolerances and Circuit Parasitics on Transient Current Sharing of Parallel-Connected SiC JFETs

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2180-2191

2014

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Volltext

Ceramic Additive Manufacturing Potential for Power Electronics Packaging

IEEE transactions on components, packaging, and manufacturing technology (2011), 2022-11, Vol.12 (11), p.1-1

2022

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Volltext

Multiphysics Characterization of a Novel SiC Power Module

IEEE transactions on components, packaging, and manufacturing technology (2011), 2019-03, Vol.9 (3), p.489-501

2019

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Volltext

Hall Effect in the Channel of 3C-SiC MOSFETs

Materials Science Forum, 2005-05, Vol.483-485, p.441-444

2005

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Design and Characterization of Newly Developed 10 kV 2 A SiC p-i-n Diode for Soft-Switching Industrial Power Supply

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.366-373

2015

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Analysis experimental verification of the influence of fabrication process tolerances circuit parasitic on transient current sharing of parallel-connected SiC JFETs

IEEE transactions on power electronics, 2014, Vol.29 (5), p.2180

2014

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Analysis and Experimental Verification of the Influence of Fabrication Process Tolerances and Circuit Parasitics on Transient Current Sharing of Parallel-Connected SiC JFETs: SPECIAL ISSUE ON WIDE BANDGAP DEVICES AND THEIR APPLICATIONS

IEEE transactions on power electronics, 2014, Vol.29 (5), p.2180-2191

2014

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Investigation of Pressure Dependent Thermal Contact Resistance between Silver Metallized SiC Chip and Molybdenum Substrate and between Molybdenum Substrate and Bulk Copper

Materials Science Forum, 2016-05, Vol.858, p.1061-1065

2016

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Theoretical Benchmarking of Vertical GaN Devices

2022 International Conference on Electrical, Computer, Communications and Mechatronics Engineering (ICECCME), 2022, p.1-5

2022

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Thermomechanical Analysis and Characterization of a Press-Pack Structure for SiC Power Module Packaging Applications

IEEE transactions on components, packaging, and manufacturing technology (2011), 2017-07, Vol.7 (7), p.1089-1100

2017

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Comparison of thermal stress during short-circuit in different types of 1.2 kV SiC transistors based on experiments and simulations

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017, Vol.897, p.1-1

2017

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Impact of Package Parasitics on Switching Performance

Materials Science Forum, 2016-05, Vol.858, p.1057-1060

2016

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Design optimization of a high temperature 1.2 kV 4H-SiC buried grid JBS rectifier

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017, Vol.897, p.1-1

2017

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Thermo-mechanical reliability and performance degradation of a lead-free RF power amplifier with GaN-on-SiC HEMTs

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017, Vol.897, p.1-1

2017

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Characterization of Band Diagrams of Different Metal-SiO2-SiC(3C) Structures

Materials science forum, 2012-01, Vol.711, p.99-103

2012

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Evaluation of the Drive Circuit for a Dual Gate Trench SiC JFET

Materials science forum, 2013, Vol.740-742, p.946-949

2013

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Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors

Foreword Special Issue on Wide Bandgap Power Switching Devices for Energy Efficiency and Renewable Energy Integration

Design, process, and performance of all-epitaxial normally-off SiC JFETs

Characterization of HfO2 films deposited on 4H-SiC by atomic layer deposition

Distributions of electric parameters in MOS structures on 3C-SiC substrate

Static and Dynamic Performance of Charge-Carrier Lifetime-Tailored High-Voltage SiC p-i-n Diodes With Capacitively Assisted Switching

Comparison of Thermal Stress During Short-Circuit in Different Types of 1.2-kV SiC Transistors Based on Experiments and Simulations

High-Power Modular Multilevel Converters With SiC JFETs

Localized Lifetime Control of 10 kV 4H-SiC PiN Diodes by MeV Proton Implantation

Analysis and Experimental Verification of the Influence of Fabrication Process Tolerances and Circuit Parasitics on Transient Current Sharing of Parallel-Connected SiC JFETs

Ceramic Additive Manufacturing Potential for Power Electronics Packaging

Multiphysics Characterization of a Novel SiC Power Module

Hall Effect in the Channel of 3C-SiC MOSFETs

Design and Characterization of Newly Developed 10 kV 2 A SiC p-i-n Diode for Soft-Switching Industrial Power Supply

Analysis experimental verification of the influence of fabrication process tolerances circuit parasitic on transient current sharing of parallel-connected SiC JFETs

Analysis and Experimental Verification of the Influence of Fabrication Process Tolerances and Circuit Parasitics on Transient Current Sharing of Parallel-Connected SiC JFETs: SPECIAL ISSUE ON WIDE BANDGAP DEVICES AND THEIR APPLICATIONS

Investigation of Pressure Dependent Thermal Contact Resistance between Silver Metallized SiC Chip and Molybdenum Substrate and between Molybdenum Substrate and Bulk Copper

Theoretical Benchmarking of Vertical GaN Devices

Thermomechanical Analysis and Characterization of a Press-Pack Structure for SiC Power Module Packaging Applications

Comparison of thermal stress during short-circuit in different types of 1.2 kV SiC transistors based on experiments and simulations

Impact of Package Parasitics on Switching Performance

Design optimization of a high temperature 1.2 kV 4H-SiC buried grid JBS rectifier

Thermo-mechanical reliability and performance degradation of a lead-free RF power amplifier with GaN-on-SiC HEMTs

Characterization of Band Diagrams of Different Metal-SiO2-SiC(3C) Structures

Evaluation of the Drive Circuit for a Dual Gate Trench SiC JFET

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