UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 213

Sortiert nach

Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors

IEEE transactions on industrial electronics (1982), 2016-04, Vol.63 (4), p.1995-2004

2016

Link zum Volltext
IEEE_Xplore

SiC versus Si-Evaluation of Potentials for Performance Improvement of Inverter and DC-DC Converter Systems by SiC Power Semiconductors

IEEE transactions on industrial electronics (1982), 2011-07, Vol.58 (7), p.2872-2882

2011

Link zum Volltext
IEEE_Xplore

Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices

IEEE transactions on industrial electronics (1982), 2020-12, Vol.67 (12), p.10284-10294

2020

Link zum Volltext
IEEE_Xplore

4H-SiC Super-Junction JFET: Design and Experimental Demonstration

IEEE electron device letters, 2020-03, Vol.41 (3), p.445-448

2020

Link zum Volltext
IEEE_Xplore

High-Power Modular Multilevel Converters With SiC JFETs

IEEE transactions on power electronics, 2012-01, Vol.27 (1), p.28-36

2012

Link zum Volltext
IEEE_Xplore

Protecting SiC JFET From Gate Overstress in GaN/SiC Cascode Device Without Compromising Switching Performance

IEEE transactions on power electronics, 2024-05, Vol.39 (5), p.5567-5575

2024

Link zum Volltext
IEEE_Xplore

Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix Converter

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2584-2596

2014

Link zum Volltext
IEEE_Xplore

Robust Through-Fin Avalanche in Vertical GaN Fin-JFET With Soft Failure Mode

IEEE electron device letters, 2022-03, Vol.43 (3), p.366-369

2022

Link zum Volltext
IEEE_Xplore

True Material Limit of Power Devices-Applied to 2-D Superjunction MOSFET

IEEE transactions on electron devices, 2018-04, Vol.65 (4), p.1432-1439

2018

Link zum Volltext
IEEE_Xplore

Switching Performance Comparison of the SiC JFET and SiC JFET/Si MOSFET Cascode Configuration

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2428-2440

2014

Link zum Volltext
IEEE_Xplore

A Low-Cost Novel Structure for Paralleled SiC JFET/Si MOSFET Cascodes to Balance Turn-on Current and Junction Temperature

IEEE transactions on power electronics, 2022-12, Vol.37 (12), p.14447-14461

2022

Link zum Volltext
IEEE_Xplore

A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility

IEEE transactions on industry applications, 2011-01, Vol.47 (1), p.199-211

2011

Link zum Volltext
IEEE_Xplore

A Shoot-Through Protection Scheme for Converters Built With SiC JFETs

IEEE transactions on industry applications, 2010-11, Vol.46 (6), p.2495-2500

2010

Link zum Volltext
IEEE_Xplore

Op-Amps without current mirrors based on depletion-mode p- and n-channel MOS and JFET

Analog integrated circuits and signal processing, 2022-10, Vol.113 (1), p.119-127

2022

Link zum Volltext

Verfügbarkeit prüfen

Open-Gate Junction Field Effect Transistor (OG-JFET) for Life Science Applications: Design, Implementation, and Characterization

IEEE sensors journal, 2021-12, Vol.21 (23), p.26503-26514

2021

Link zum Volltext
IEEE_Xplore

Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET

IEEE electron device letters, 2019-05, Vol.40 (5), p.698-701

2019

Link zum Volltext
IEEE_Xplore

Mechanism and Novel Structure for di/dt Controllability in U-Shaped Channel Silicon-on-Insulator Lateral IGBTs

IEEE electron device letters, 2019-10, Vol.40 (10), p.1658-1661

2019

Link zum Volltext
IEEE_Xplore

A CMOS-Process-Compatible Low-Voltage Junction-FET With Adjustable Pinch-Off Voltage

IEEE transactions on electron devices, 2017-07, Vol.64 (7), p.2812-2819

2017

Link zum Volltext
IEEE_Xplore

The Trench Power MOSFET: Part I-History, Technology, and Prospects

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.674-691

2017

Link zum Volltext

Verfügbarkeit prüfen

A 120 °C Ambient Temperature Forced Air-Cooled Normally-off SiC JFET Automotive Inverter System

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2345-2358

2014

Link zum Volltext
IEEE_Xplore

Low-Loss SOI-LIGBT With Triple Deep-Oxide Trenches

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3756-3761

2017

Link zum Volltext
IEEE_Xplore

A Transformerless 6.6-kV STATCOM Based on a Hybrid Cascade Multilevel Converter Using SiC Devices

IEEE transactions on power electronics, 2018-09, Vol.33 (9), p.7411-7423

2018

Link zum Volltext
IEEE_Xplore

A New Foundry-Based Open-Gate Junction Field-Effect Transistor (OG-JFET) as Electronic Sensing Platform (ESP) for Life Science Applications

2021 IEEE Sensors, 2021, p.1-4

2021

Link zum Volltext
IEEE_Xplore

Boost Converter With SiC JFETs: Comparison With CoolMOS and Tests at Elevated Case Temperature

IEEE transactions on power electronics, 2013-04, Vol.28 (4), p.1938-1945

2013

Link zum Volltext
IEEE_Xplore

D v/D t -Control Methods for the SiC JFET/Si MOSFET Cascode

IEEE transactions on power electronics, 2013-08, Vol.28 (8), p.4074-4082

2013

Link zum Volltext
IEEE_Xplore

1 – 25 von 213

Suche als RSS-Feed

Aktive Filter

ThemaSilicon

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(104)
Mit Volltextzugriff
(181)

Publikationsform

Sprache

Englisch
(213)
Japanisch
(14)

Erscheinungsjahr

n.n

Thema

Jfets
(145)
Science & Technology
(140)
Technology
(139)
Engineering
(126)
Engineering, Electrical & Electronic
(125)
Silicon Carbide
(117)
Jfet
(82)
Logic Gates
(72)
Mosfet
(59)
Switches
(50)
Mosfets
(45)
Physics
(38)
Semiconductor Devices
(38)
Physical Sciences
(36)
Transistors
(33)
Insulated Gate Bipolar Transistors
(29)
Physics, Applied
(28)
Field Effect Transistors
(27)
Voltage
(27)

14 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors

SiC versus Si-Evaluation of Potentials for Performance Improvement of Inverter and DC-DC Converter Systems by SiC Power Semiconductors

Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices

4H-SiC Super-Junction JFET: Design and Experimental Demonstration

High-Power Modular Multilevel Converters With SiC JFETs

Protecting SiC JFET From Gate Overstress in GaN/SiC Cascode Device Without Compromising Switching Performance

Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix Converter

Robust Through-Fin Avalanche in Vertical GaN Fin-JFET With Soft Failure Mode

True Material Limit of Power Devices-Applied to 2-D Superjunction MOSFET

Switching Performance Comparison of the SiC JFET and SiC JFET/Si MOSFET Cascode Configuration

A Low-Cost Novel Structure for Paralleled SiC JFET/Si MOSFET Cascodes to Balance Turn-on Current and Junction Temperature

A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility

A Shoot-Through Protection Scheme for Converters Built With SiC JFETs

Op-Amps without current mirrors based on depletion-mode p- and n-channel MOS and JFET

Open-Gate Junction Field Effect Transistor (OG-JFET) for Life Science Applications: Design, Implementation, and Characterization

Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET

Mechanism and Novel Structure for di/dt Controllability in U-Shaped Channel Silicon-on-Insulator Lateral IGBTs

A CMOS-Process-Compatible Low-Voltage Junction-FET With Adjustable Pinch-Off Voltage

The Trench Power MOSFET: Part I-History, Technology, and Prospects

A 120 °C Ambient Temperature Forced Air-Cooled Normally-off SiC JFET Automotive Inverter System

Low-Loss SOI-LIGBT With Triple Deep-Oxide Trenches

A Transformerless 6.6-kV STATCOM Based on a Hybrid Cascade Multilevel Converter Using SiC Devices

A New Foundry-Based Open-Gate Junction Field-Effect Transistor (OG-JFET) as Electronic Sensing Platform (ESP) for Life Science Applications

Boost Converter With SiC JFETs: Comparison With CoolMOS and Tests at Elevated Case Temperature

D v/D t -Control Methods for the SiC JFET/Si MOSFET Cascode

Aktive Filter

Suchergebnisse filtern