UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Comparison of Thermal Stress During Short-Circuit in Different Types of 1.2-kV SiC Transistors Based on Experiments and Simulations

IEEE transactions on industrial electronics (1982), 2021-03, Vol.68 (3), p.2608-2616

2021

Volltextzugriff (PDF)

High-Power Modular Multilevel Converters With SiC JFETs

IEEE transactions on power electronics, 2012-01, Vol.27 (1), p.28-36

2012

Volltextzugriff (PDF)

Ceramic Additive Manufacturing Potential for Power Electronics Packaging

IEEE transactions on components, packaging, and manufacturing technology (2011), 2022-11, Vol.12 (11), p.1-1

2022

Volltextzugriff (PDF)

Analysis and Experimental Verification of the Influence of Fabrication Process Tolerances and Circuit Parasitics on Transient Current Sharing of Parallel-Connected SiC JFETs

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2180-2191

2014

Volltextzugriff (PDF)

Trench‐Confined InP‐Based Epitaxial Regrowth Using Metal‐Organic Vapor‐Phase Epitaxy

Physica status solidi. A, Applications and materials science, 2018-04, Vol.215 (8), p.n/a

2018

Volltextzugriff (PDF)

Comparison of thermal stress during short-circuit in different types of 1.2 kV SiC transistors based on experiments and simulations

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017, Vol.897, p.1-1

2017

Volltextzugriff (PDF)

Measurement and Analysis of Body Diode Stress of 3.3 kV Sic-Mosfets with Intrinsic Body Diode and Embedded SBD

Materials science forum, 2023-06, Vol.1091, p.55-59

2023

Volltextzugriff (PDF)

Design optimization of a high temperature 1.2 kV 4H-SiC buried grid JBS rectifier

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017, Vol.897, p.1-1, Article 455

2017

Volltextzugriff (PDF)

Thermo-mechanical reliability and performance degradation of a lead-free RF power amplifier with GaN-on-SiC HEMTs

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017, Vol.897, p.1-1

2017

Volltextzugriff (PDF)

Design and Characterization of Newly Developed 10 kV 2 A SiC p-i-n Diode for Soft-Switching Industrial Power Supply

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.366-373, Article 366

2015

Volltextzugriff (PDF)

4H- and 6H-SiC UV photodetectors

Physica status solidi. C, 2012-07, Vol.9 (7), p.1680-1682

2012

Volltextzugriff (PDF)

Impact of Package Parasitics on Switching Performance

Materials Science Forum, 2016, Vol.858, p.1057-1060

2016

Volltextzugriff (PDF)

Modeling of the Impact of Parameter Spread on the Switching Performance of Parallel-Connected SiC VJFETs

Materials science forum, 2013, Vol.740-742, p.1098-1102

2013

Volltextzugriff (PDF)

Planarization of Epitaxial SiC Trench Structures by Plasma Ion Etching

Materials Science Forum, 2015-06, Vol.821-823, p.549-552

2015

Volltextzugriff (PDF)

Temperature-Dependent Characteristics of 4H-SiC Buried Grid JBS Diodes

Materials science forum, 2015, Vol.821-823, p.600-603

2015

Volltextzugriff (PDF)

Evaluation of Buried Grid JBS Diodes

Materials science forum, 2014, Vol.778-780, p.804-807

2014

Volltextzugriff (PDF)

High-Efficiency Power Conversion Using Silicon Carbide Power Electronics

Materials science forum, 2014, Vol.778-780, p.1083-1088

2014

Volltextzugriff (PDF)

Experimental investigations of static and transient current sharing of parallel-connected silicon carbide MOSFETs

2013 15th European Conference on Power Electronics and Applications (EPE), 2013, p.1-10

2013

Volltextzugriff (PDF)

Comparison of Total Losses of 1.2 kV SiC JFET and BJT in DC-DC Converter Including Gate Driver

Materials science forum, 2011-01, Vol.679-680, p.649-652

2011

Volltextzugriff (PDF)

Humidity testing of SiC power MOSFETs - An update

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe), 2017, p.1-P.8

2017

Volltextzugriff (PDF)

Design and Gate Drive Considerations for Epitaxial 1.2 kV Buried Grid N-on and N-off JFETs for Operation at 250°C

Materials science forum, 2010, Vol.645-648, p.961-964

2010

Volltextzugriff (PDF)

Investigation of long-term parameter variations of SiC power MOSFETs

2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), 2015, p.1-10

2015

Volltextzugriff (PDF)

A Theoretical and Experimental Comparison of 4H- and 6H-SiC MSM UV Photodetectors

Materials science forum, 2012, Vol.717-720, p.1207-1210

2012

Volltextzugriff (PDF)

Circuit Modeling of Vertical Buried-Grid SiC JFETs

Materials science forum, 2010-01, Vol.645-648, p.965-968

2010

Volltextzugriff (PDF)

High-power modular multilevel converters with SiC JFETs

2010 IEEE Energy Conversion Congress and Exposition, 2010, p.2148-2155

2010

Volltextzugriff (PDF)

1 – 25 von 191

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(159)
Mit Volltextzugriff
(123)

Publikationsform

Artikel
(171)
Tagungsberichte
(20)

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(103)
Life Sciences & Biomedicine
(63)
Humans
(43)
Child
(32)
Female
(32)
Male
(31)
Technology
(29)
Physical Sciences
(27)
Original
(24)
Silicon Carbide
(23)
Materials Science
(20)
Physics
(20)
Republic Of Korea
(18)
Adhd
(16)
Materials Science, Multidisciplinary
(16)
Physics, Applied
(15)
Public, Environmental & Occupational Health
(15)
Engineering
(13)
Psychiatry
(13)
Risk Factors
(13)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(2)
... seit 90 Tagen
(4)

Menü

Weitere Dienste

Einstellungen

Comparison of Thermal Stress During Short-Circuit in Different Types of 1.2-kV SiC Transistors Based on Experiments and Simulations

High-Power Modular Multilevel Converters With SiC JFETs

Ceramic Additive Manufacturing Potential for Power Electronics Packaging

Analysis and Experimental Verification of the Influence of Fabrication Process Tolerances and Circuit Parasitics on Transient Current Sharing of Parallel-Connected SiC JFETs

Trench‐Confined InP‐Based Epitaxial Regrowth Using Metal‐Organic Vapor‐Phase Epitaxy

Comparison of thermal stress during short-circuit in different types of 1.2 kV SiC transistors based on experiments and simulations

Measurement and Analysis of Body Diode Stress of 3.3 kV Sic-Mosfets with Intrinsic Body Diode and Embedded SBD

Design optimization of a high temperature 1.2 kV 4H-SiC buried grid JBS rectifier

Thermo-mechanical reliability and performance degradation of a lead-free RF power amplifier with GaN-on-SiC HEMTs

Design and Characterization of Newly Developed 10 kV 2 A SiC p-i-n Diode for Soft-Switching Industrial Power Supply

4H- and 6H-SiC UV photodetectors

Impact of Package Parasitics on Switching Performance

Modeling of the Impact of Parameter Spread on the Switching Performance of Parallel-Connected SiC VJFETs

Planarization of Epitaxial SiC Trench Structures by Plasma Ion Etching

Temperature-Dependent Characteristics of 4H-SiC Buried Grid JBS Diodes

Evaluation of Buried Grid JBS Diodes

High-Efficiency Power Conversion Using Silicon Carbide Power Electronics

Experimental investigations of static and transient current sharing of parallel-connected silicon carbide MOSFETs

Comparison of Total Losses of 1.2 kV SiC JFET and BJT in DC-DC Converter Including Gate Driver

Humidity testing of SiC power MOSFETs - An update

Design and Gate Drive Considerations for Epitaxial 1.2 kV Buried Grid N-on and N-off JFETs for Operation at 250°C

Investigation of long-term parameter variations of SiC power MOSFETs

A Theoretical and Experimental Comparison of 4H- and 6H-SiC MSM UV Photodetectors

Circuit Modeling of Vertical Buried-Grid SiC JFETs

High-power modular multilevel converters with SiC JFETs

Suchergebnisse filtern