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IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.674-691
2017
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IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.692-712
2017
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Microelectronics and reliability, 2012-03, Vol.52 (3), p.509-518
2012
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Design considerations for charge-compensated fast-switching power MOSFET in the medium-voltage range
2018
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Facta universitatis. Series Electronics and energetics, 2015-09, Vol.28 (3), p.477-494
2015
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IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.369-379
2006
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Microelectronics, 2004-03, Vol.35 (3), p.259-267
2004
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2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe), 2023, p.1-11
2023
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Solid-state electronics, 2002-06, Vol.46 (6), p.891-901
2002
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2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe), 2021, p.1-P.10
2021
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2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), 2022, p.1-11
2022
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2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010, p.165-168
2010
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2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe), 2019, p.1-P.16
2019
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2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe), 2017, p.1-P.13
2017
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2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), 2015, p.1-10
2015
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Proceedings of the 2011 14th European Conference on Power Electronics and Applications, 2011, p.1-10
2011
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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs, 2004, p.249-252
2004
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2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716), 2004, Vol.1, p.167-170 vol.1
2004
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2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595), 2002, Vol.1, p.167-170 vol.1
2002
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2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595), 2002, Vol.1, p.177-180 vol.1
2002
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