UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 171

Sortiert nach

Electron transport and full-band electron-phonon interactions in graphene

Journal of applied physics, 2008-03, Vol.103 (5), p.053702-053702-8

2008

Link zum Volltext

Verfügbarkeit prüfen

A Physical Model of High Temperature 4H-SiC MOSFETs

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2029-2040

2008

Link zum Volltext
Volltext

Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs

Materials science forum, 2012-05, Vol.717-720, p.465-468

2012

Link zum Volltext

Verfügbarkeit prüfen

Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor

Journal of applied physics, 2006-08, Vol.100 (4)

2006

Link zum Volltext

Verfügbarkeit prüfen

Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast I- V Techniques

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2004-2012

2008

Link zum Volltext
Volltext

A novel high energy density flexible galvanic cell

Energy & environmental science, , Vol.4 (5), p.1807

Link zum Volltext

Verfügbarkeit prüfen

Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability

Materials science forum, 2009-01, Vol.600-603, p.807-810

2009

Link zum Volltext

Verfügbarkeit prüfen

Geometry enhanced asymmetric rectifying tunneling diodes

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-11, Vol.28 (6), p.C6-C6O55

2010

Link zum Volltext

Verfügbarkeit prüfen

A new process for the fabrication of planar antenna coupled Ni–NiOx–Ni tunnel junction devices

Microelectronic engineering, 2012-10, Vol.98, p.329-333

2012

Link zum Volltext

Verfügbarkeit prüfen

A quasi-two-dimensional depth-dependent mobility model suitable for device simulation for Coulombic scattering due to interface trapped charges

Journal of applied physics, 2006-08, Vol.100 (4)

2006

Link zum Volltext

Verfügbarkeit prüfen

Total Near Interface Trap Density Calculation of 4H-SiC/SiO2 Structures before and after Nitrogen Passivation

Materials science forum, 2012-05, Vol.717-720, p.457-460

2012

Link zum Volltext

Verfügbarkeit prüfen

Physics-based numerical modeling and characterization of 6H -silicon-carbide metal–oxide–semiconductor field-effect transistors

Journal of applied physics, 2002-10, Vol.92 (7), p.4053-4061

2002

Link zum Volltext

Verfügbarkeit prüfen

Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs

Materials science forum, 2006-10, Vol.527-529, p.1317-1320

2006

Link zum Volltext

Verfügbarkeit prüfen

An Antenna Co-Design Dual Band RF Energy Harvester

IEEE transactions on circuits and systems. I, Regular papers, 2013-12, Vol.60 (12), p.3256-3266

2013

Link zum Volltext
Volltext

Energy Dependence of Atmospheric Neutron-Induced Failures in Silicon Carbide Power Devices

IEEE transactions on nuclear science, 2022-04, Vol.69 (4), p.900-907

2022

Link zum Volltext
Volltext

Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1835-1840

2008

Link zum Volltext
Volltext

Investigation of Wide- and Ultrawide-Bandgap Semiconductors From Impact-Ionization Coefficients

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.3999-4005

2020

Link zum Volltext
Volltext

Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge

Materials science forum, 2009-01, Vol.615-617, p.769-772

2009

Link zum Volltext

Verfügbarkeit prüfen

Role of Oxygen Vacancies in Short- and Long-Term Instability of Negative Bias-Temperature Stressed SiC MOSFETs

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.1007-1014

2017

Link zum Volltext
Volltext

Temperature Dependent Characterization-based Design Optimization of a DC-DC Converter for High-Temperature Applications

2022 IEEE Applied Power Electronics Conference and Exposition (APEC), 2022, p.2034-2039

2022

Link zum Volltext
Volltext

Large Area Silicon Carbide Photodiode, and Monolithic Readout Design and Fabrication

Materials Science Forum, 2016-05, Vol.858, p.1023-1027

2016

Link zum Volltext

Verfügbarkeit prüfen

A Focused Asymmetric Metal-Insulator-Metal Tunneling Diode: Fabrication, DC Characteristics and RF Rectification Analysis

IEEE transactions on electron devices, 2011-10, Vol.58 (10), p.3519-3528

2011

Link zum Volltext
Volltext

High field density-functional-theory based Monte Carlo: 4H-SiC impact ionization and velocity saturation

Journal of applied physics, 2009-02, Vol.105 (3)

2009

Link zum Volltext

Verfügbarkeit prüfen

Characterization of Single-Photon Avalanche Diodes in a 0.5 $\mu$m Standard CMOS Process—Part 1: Perimeter Breakdown Suppression

IEEE sensors journal, 2010-11, Vol.10 (11), p.1682-1690

2010

Link zum Volltext

Verfügbarkeit prüfen

Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO sub(2) Interface during Nitric Oxide Passivation - A First Principles Study

Materials Science Forum, 2016-05, Vol.858, p.465-468

2016

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 171

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(101)
Mit Volltextzugriff
(165)

Publikationsform

Artikel
(101)
Tagungsberichte
(70)

Sprache

Englisch
(167)
Japanisch
(14)

Erscheinungsjahr

n.n

Thema

Science & Technology
(104)
Technology
(89)
Engineering
(67)
Engineering, Electrical & Electronic
(66)
Physical Sciences
(61)
Physics
(60)
Physics, Applied
(55)
Exact Sciences And Technology
(29)
Electronics
(26)
Applied Sciences
(24)
Silicon Carbide
(24)
Educational Institutions
(23)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(22)
Materials Science
(20)
Physics, Condensed Matter
(19)
Mosfets
(18)
Computer Science
(15)
Materials Science, Multidisciplinary
(14)
Mosfet
(13)
Transistors
(13)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Electron transport and full-band electron-phonon interactions in graphene

A Physical Model of High Temperature 4H-SiC MOSFETs

Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs

Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor

Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast I- V Techniques

A novel high energy density flexible galvanic cell

Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability

Geometry enhanced asymmetric rectifying tunneling diodes

A new process for the fabrication of planar antenna coupled Ni–NiOx–Ni tunnel junction devices

A quasi-two-dimensional depth-dependent mobility model suitable for device simulation for Coulombic scattering due to interface trapped charges

Total Near Interface Trap Density Calculation of 4H-SiC/SiO2 Structures before and after Nitrogen Passivation

Physics-based numerical modeling and characterization of 6H -silicon-carbide metal–oxide–semiconductor field-effect transistors

Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs

An Antenna Co-Design Dual Band RF Energy Harvester

Energy Dependence of Atmospheric Neutron-Induced Failures in Silicon Carbide Power Devices

Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements

Investigation of Wide- and Ultrawide-Bandgap Semiconductors From Impact-Ionization Coefficients

Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge

Role of Oxygen Vacancies in Short- and Long-Term Instability of Negative Bias-Temperature Stressed SiC MOSFETs

Temperature Dependent Characterization-based Design Optimization of a DC-DC Converter for High-Temperature Applications

Large Area Silicon Carbide Photodiode, and Monolithic Readout Design and Fabrication

A Focused Asymmetric Metal-Insulator-Metal Tunneling Diode: Fabrication, DC Characteristics and RF Rectification Analysis

High field density-functional-theory based Monte Carlo: 4H-SiC impact ionization and velocity saturation

Characterization of Single-Photon Avalanche Diodes in a 0.5 $\mu$m Standard CMOS Process—Part 1: Perimeter Breakdown Suppression

Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO sub(2) Interface during Nitric Oxide Passivation - A First Principles Study

Suchergebnisse filtern