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GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration

Journal of crystal growth, 2011-01, Vol.315 (1), p.37-47

2011

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Room‐temperature laser operation of a (Ga,In)As/Ga(As,Bi)/(Ga,In)As W‐type laser diode

Electronics letters, 2022-01, Vol.58 (2), p.70-72

2022

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Optical gain in GaAsBi/GaAs quantum well diode lasers

Scientific reports, 2016-07, Vol.6 (1), p.28863-28863, Article 28863

2016

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Pyramidal Structure Formation at the Interface between III/V Semiconductors and Silicon

Chemistry of materials, 2016-05, Vol.28 (10), p.3265-3275

2016

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Sub-picosecond acoustic pulses at buried GaP/Si interfaces

Applied physics letters, 2017-08, Vol.111 (6)

2017

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GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

Scientific reports, 2017-04, Vol.7 (1), p.46371-46371, Article 46371

2017

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Influence of crystal polarity on crystal defects in GaP grown on exact Si (001)

Journal of applied physics, 2011-04, Vol.109 (8), p.083529-083529-6

2011

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High-Power Optically Pumped Semiconductor Laser at 1040 nm

IEEE photonics technology letters, 2010-05, Vol.22 (9), p.661-663

2010

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Determination of refractive index and direct bandgap of lattice matched BGaP and (BGa)(AsP) materials on exact oriented silicon

Journal of applied physics, 2017-12, Vol.122 (23)

2017

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Revealing the Significance of Catalytic and Alkyl Exchange Reactions during GaAs and GaP Growth by Metal Organic Vapor Phase Epitaxy

ACS omega, 2021-10, Vol.6 (42), p.28229-28241

2021

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Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers

Applied physics letters, 2006-01, Vol.88 (2)

2006

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Detection of nanometer-sized strain fields in (GaIn)(NAs) alloys by specific dark field transmission electron microscopic imaging

Journal of applied physics, 2005-01, Vol.97 (1), p.014306-014306-4

2005

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The Impact of Band Bending on the Thermal Behaviour of Gain in Type-II GaAs-Based "W"-Lasers

IEEE journal of selected topics in quantum electronics, 2025-03, Vol.31 (2: Pwr. and Effic. Scaling in Semiconductor Lasers), p.1-10

2025

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4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation

Optics express, 2013-01, Vol.21 (2), p.1599-1605

2013

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Effect of growth interruption on Ga(N, As)/Ga(As, Sb)/Ga(N, As) type-II-“W” quantum well heterostructures

Journal of crystal growth, 2022-03, Vol.582, p.126501, Article 126501

2022

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The influence of growth interruption on the luminescence properties of Ga(As,Sb)-based type II heterostructures

Journal of luminescence, 2021-03, Vol.231, p.117817, Article 117817

2021

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Microcavity-enhanced Kerr nonlinearity in a vertical-external-cavity surface-emitting laser

Optics express, 2019-04, Vol.27 (9), p.11914-11929

2019

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Coherent optical and acoustic phonons generated at lattice-matched GaP/Si(0 0 1) heterointerfaces

Journal of physics. Condensed matter, 2019-03, Vol.31 (9), p.94003-094003

2019

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Two-chip power-scalable THz-generating semiconductor disk laser

Optics letters, 2019-08, Vol.44 (16), p.4000-4003

2019

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Refractive index dispersion of BGa(As)P alloys in the near-infrared for III-V laser integration on silicon

Journal of applied physics, 2022-04, Vol.131 (13)

2022

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Self-mode-locking semiconductor disk laser

Optics express, 2014-11, Vol.22 (23), p.28390-28399

2014

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A 23-watt single-frequency vertical-external-cavity surface-emitting laser

Optics express, 2014-06, Vol.22 (11), p.12817-12822

2014

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Room temperature laser emission of (Ga,In)(N,As)/Ga(As,Sb)/(Ga,In)(N,As) type‐II ‘W’ quantum well heterostructures

Electronics letters, 2022-04, Vol.58 (8), p.327-329

2022

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Microcavity-enhanced Kerr nonlinearity in a vertical-external-cavity surface-emitting laser: erratum

Optics express, 2021-07, Vol.29 (15), p.23290-23291

2021

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Dilute Bismuth Containing W‑Type Heterostructures for Long-Wavelength Emission on GaAs Substrates

Crystal growth & design, 2021-11, Vol.21 (11), p.6307-6313

2021

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GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration

Room‐temperature laser operation of a (Ga,In)As/Ga(As,Bi)/(Ga,In)As W‐type laser diode

Optical gain in GaAsBi/GaAs quantum well diode lasers

Pyramidal Structure Formation at the Interface between III/V Semiconductors and Silicon

Sub-picosecond acoustic pulses at buried GaP/Si interfaces

GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

Influence of crystal polarity on crystal defects in GaP grown on exact Si (001)

High-Power Optically Pumped Semiconductor Laser at 1040 nm

Determination of refractive index and direct bandgap of lattice matched BGaP and (BGa)(AsP) materials on exact oriented silicon

Revealing the Significance of Catalytic and Alkyl Exchange Reactions during GaAs and GaP Growth by Metal Organic Vapor Phase Epitaxy

Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers

Detection of nanometer-sized strain fields in (GaIn)(NAs) alloys by specific dark field transmission electron microscopic imaging

The Impact of Band Bending on the Thermal Behaviour of Gain in Type-II GaAs-Based "W"-Lasers

4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation

Effect of growth interruption on Ga(N, As)/Ga(As, Sb)/Ga(N, As) type-II-“W” quantum well heterostructures

The influence of growth interruption on the luminescence properties of Ga(As,Sb)-based type II heterostructures

Microcavity-enhanced Kerr nonlinearity in a vertical-external-cavity surface-emitting laser

Coherent optical and acoustic phonons generated at lattice-matched GaP/Si(0 0 1) heterointerfaces

Two-chip power-scalable THz-generating semiconductor disk laser

Refractive index dispersion of BGa(As)P alloys in the near-infrared for III-V laser integration on silicon

Self-mode-locking semiconductor disk laser

A 23-watt single-frequency vertical-external-cavity surface-emitting laser

Room temperature laser emission of (Ga,In)(N,As)/Ga(As,Sb)/(Ga,In)(N,As) type‐II ‘W’ quantum well heterostructures

Microcavity-enhanced Kerr nonlinearity in a vertical-external-cavity surface-emitting laser: erratum

Dilute Bismuth Containing W‑Type Heterostructures for Long-Wavelength Emission on GaAs Substrates

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