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Optical gain in GaAsBi/GaAs quantum well diode lasers

Scientific reports, 2016-07, Vol.6 (1), p.28863-28863, Article 28863

2016

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Device Architecture Engineering: Progress toward Next Generation Perovskite Solar Cells

Advanced functional materials, 2021-08, Vol.31 (35), p.n/a

2021

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Effects of phosphorous and antimony doping on thin Ge layers grown on Si

Scientific reports, 2024-04, Vol.14 (1), p.7969-7969

2024

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GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

Scientific reports, 2017-04, Vol.7 (1), p.46371-46371, Article 46371

2017

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Formamidinium Lead Halide Perovskite Nanocomposite Scintillators

Nanomaterials (Basel, Switzerland), 2022-06, Vol.12 (13), p.2141

2022

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Development of time-resolved photoluminescence microscopy of semiconductor materials and devices using a compressed sensing approach

Measurement science & technology, 2024-01, Vol.35 (1), p.15207

2024

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Progress Toward III-V Bismide Alloys for Near- and Midinfrared Laser Diodes

IEEE journal of selected topics in quantum electronics, 2017-11, Vol.23 (6), p.1-12

2017

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Effect of Single and Combined Monochromatic Light on the Human Pupillary Light Response

Frontiers in neurology, 2018-11, Vol.9, p.1019-1019

2018

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The impact of strained layers on current and emerging semiconductor laser systems

Journal of applied physics, 2019-02, Vol.125 (8)

2019

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Refractive index dispersion of BGa(As)P alloys in the near-infrared for III-V laser integration on silicon

Journal of applied physics, 2022-04, Vol.131 (13)

2022

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A Multifaceted Ferrocene Interlayer for Highly Stable and Efficient Lithium Doped Spiro‐OMeTAD‐based Perovskite Solar Cells

Advanced energy materials, 2022-07, Vol.12 (26), p.n/a

2022

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The influence of inhomogeneities and defects on novel quantum well and quantum dot based infrared-emitting semiconductor lasers

Semiconductor science and technology, 2018-11, Vol.33 (11), p.113002

2018

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Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration

Scientific reports, 2019-10, Vol.9 (1), p.1-10, Article 14077

2019

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Carrier Recombination Properties of Low-Threshold 1.3 μm Quantum Dot Lasers on Silicon

IEEE journal of selected topics in quantum electronics, 2022-01, Vol.28 (1: Semiconductor Lasers), p.1-10

2022

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Effect of non-pinned carrier density above threshold in InAs quantum dot and quantum dash lasers

IET optoelectronics, 2014-04, Vol.8 (2), p.88-93

2014

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Quantifying Auger recombination coefficients in type-I mid-infrared InGaAsSb quantum well lasers

Journal of physics. D, Applied physics, 2021-02, Vol.54 (5), p.55105

2021

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Performance characteristics of low threshold current 1.25 μm type-II GaInAs/GaAsSb ‘W’-lasers for optical communications

Journal of physics. D, Applied physics, 2021-09, Vol.54 (36), p.365104

2021

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The influence of temperature on the recombination processes in blue and green InGaN LEDs

Physica status solidi. C, 2013-11, Vol.10 (11), p.1533-1536

2013

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Metalorganic vapor phase epitaxy growth and characterization of quaternary (Ga,In)(As,Bi) on GaAs substrates

Journal of applied physics, 2019-08, Vol.126 (8)

2019

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The Nature of Auger Recombination in Type-I Quantum Well Lasers Operating in the Mid-Infrared

IEEE journal of selected topics in quantum electronics, 2022-01, Vol.28 (1: Semiconductor Lasers), p.1-11

2022

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Giant bowing of the band gap and spin-orbit splitting energy in GaP 1-x Bi x dilute bismide alloys

Scientific reports, 2019-12, Vol.9 (1), p.6835

2019

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Wavelength Dependence of Efficiency Limiting Mechanisms in Type-I Mid-Infrared GaInAsSb/GaSb Lasers

IEEE journal of selected topics in quantum electronics, 2017-11, Vol.23 (6), p.1-9

2017

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Selective light transmission as a leading innovation for solar swimming pool covers

Solar energy, 2020-09, Vol.207, p.388-397

2020

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High-bandwidth perovskite photonic sources on silicon

Nature photonics, 2023-09, Vol.17 (9), p.798-805

2023

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Giant bowing of the band gap and spin-orbit splitting energy in GaP1−xBix dilute bismide alloys

Scientific reports, 2019-05, Vol.9 (1), p.6835-6835, Article 6835

2019

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Optical gain in GaAsBi/GaAs quantum well diode lasers

Device Architecture Engineering: Progress toward Next Generation Perovskite Solar Cells

Effects of phosphorous and antimony doping on thin Ge layers grown on Si

GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

Formamidinium Lead Halide Perovskite Nanocomposite Scintillators

Development of time-resolved photoluminescence microscopy of semiconductor materials and devices using a compressed sensing approach

Progress Toward III-V Bismide Alloys for Near- and Midinfrared Laser Diodes

Effect of Single and Combined Monochromatic Light on the Human Pupillary Light Response

The impact of strained layers on current and emerging semiconductor laser systems

Refractive index dispersion of BGa(As)P alloys in the near-infrared for III-V laser integration on silicon

A Multifaceted Ferrocene Interlayer for Highly Stable and Efficient Lithium Doped Spiro‐OMeTAD‐based Perovskite Solar Cells

The influence of inhomogeneities and defects on novel quantum well and quantum dot based infrared-emitting semiconductor lasers

Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration

Carrier Recombination Properties of Low-Threshold 1.3 μm Quantum Dot Lasers on Silicon

Effect of non-pinned carrier density above threshold in InAs quantum dot and quantum dash lasers

Quantifying Auger recombination coefficients in type-I mid-infrared InGaAsSb quantum well lasers

Performance characteristics of low threshold current 1.25 μm type-II GaInAs/GaAsSb ‘W’-lasers for optical communications

The influence of temperature on the recombination processes in blue and green InGaN LEDs

Metalorganic vapor phase epitaxy growth and characterization of quaternary (Ga,In)(As,Bi) on GaAs substrates

The Nature of Auger Recombination in Type-I Quantum Well Lasers Operating in the Mid-Infrared

Giant bowing of the band gap and spin-orbit splitting energy in GaP 1-x Bi x dilute bismide alloys

Wavelength Dependence of Efficiency Limiting Mechanisms in Type-I Mid-Infrared GaInAsSb/GaSb Lasers

Selective light transmission as a leading innovation for solar swimming pool covers

High-bandwidth perovskite photonic sources on silicon

Giant bowing of the band gap and spin-orbit splitting energy in GaP1−xBix dilute bismide alloys

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