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Phosphorus-doped (113) CVD diamond: A breakthrough towards bipolar diamond devices

Applied physics letters, 2019-03, Vol.114 (11)

2019

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Detection Limit of Phosphorus in Diamond by High Mass Resolution Secondary‐Ion Mass Spectrometry

Physica status solidi. A, Applications and materials science, 2023-02, Vol.220 (4), p.n/a

2023

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New Process for Electrical Contacts on (100) N‐type Diamond

Physica status solidi. A, Applications and materials science, 2017-11, Vol.214 (11), p.n/a

2017

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Defect and Threading Dislocations in Single Crystal Diamond: A Focus on Boron and Nitrogen Codoping

Physica status solidi. A, Applications and materials science, 2019-11, Vol.216 (21), p.n/a

2019

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Electrical activity of (100) n-type diamond with full donor site incorporation of phosphorus

Physica status solidi. A, Applications and materials science, 2015-11, Vol.212 (11), p.2454-2459

2015

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Attractive electron mobility in (113) n-type phosphorus-doped homoepitaxial diamond

Carbon (New York), 2021-04, Vol.175, p.254-258

2021

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The effect of microstructure and film composition on the mechanical properties of linear antenna CVD diamond thin films

Acta materialia, 2024-01, Vol.264, p.119548, Article 119548

2024

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Sensitivity of photoelectron energy loss spectroscopy to surface reconstruction of microcrystalline diamond films

Applied surface science, 2013-05, Vol.273, p.607-612

2013

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Impact of Nitrogen, Boron and Phosphorus Impurities on the Electronic Structure of Diamond Probed by X-ray Spectroscopies

C (Basel), 2021-03, Vol.7 (1), p.28

2021

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Behaviour of fission products in UO2: Experimental characterization of the Cs-I-UO2 model system at high temperature

Journal of nuclear materials, 2023-08, Vol.581, p.154450, Article 154450

2023

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Enhanced tunability and temperature-dependent dielectric characteristics at microwaves of K0.5Na0.5NbO3 thin films epitaxially grown on (100)MgO substrates

Journal of alloys and compounds, 2021-03, Vol.856, p.158138, Article 158138

2021

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Thick and widened high quality heavily boron doped diamond single crystals synthetized with high oxygen flow under high microwave power regime

Diamond and related materials, 2019-04, Vol.94, p.88-91

2019

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Impurity-to-band activation energy in phosphorus doped diamond

Journal of applied physics, 2013-08, Vol.114 (7)

2013

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Nitrogen Investigation by SIMS in Two Wide Band-Gap Semiconductors: Diamond and Silicon Carbide

Materials science forum, 2022-05, Vol.1062, p.376-382

2022

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Thick heavily boron doped CVD diamond films homoepitaxially grown on (111)-oriented substrates

Diamond and related materials, 2017-10, Vol.79, p.108-111

2017

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Growth of thick and heavily boron-doped (113)-oriented CVD diamond films

Diamond and related materials, 2016-06, Vol.66, p.61-66

2016

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Quantitative analysis of electronic absorption of phosphorus donors in diamond

Diamond and related materials, 2017-04, Vol.74, p.24-30

2017

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Homoepitaxial boron-doped diamond with very low compensation

Physica status solidi. A, Applications and materials science, 2012-09, Vol.209 (9), p.1750-1753

2012

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Phosphorus donor incorporation in (1 0 0) homoepitaxial diamond: Role of the lateral growth

Journal of crystal growth, 2011-11, Vol.335 (1), p.31-36

2011

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n-Type CVD diamond: Epitaxy and doping

Materials science & engineering. B, Solid-state materials for advanced technology, 2011-10, Vol.176 (17), p.1401-1408

2011

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Highly photostable NV centre ensembles in CVD diamond produced by using N 2 O as the doping gas

Applied physics letters, 2017-10, Vol.111 (14)

2017

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Picosecond dynamics of free and bound excitons in doped diamond

Physical review. B, 2016-03, Vol.93 (11), Article 115202

2016

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Determination of the phosphorus content in diamond using cathodoluminescence spectroscopy

Journal of applied physics, 2007-06, Vol.101 (11), p.113701-113701-4

2007

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Phosphorus incorporation and activity in (100)-oriented homoepitaxial diamond layers

Physica status solidi. A, Applications and materials science, 2009-09, Vol.206 (9), p.2000-2003

2009

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Ohmic contacts study of P+N diodes on (111) and (100) diamond

2019 IEEE 13th International Conference on Power Electronics and Drive Systems (PEDS), 2019, p.1-3

2019

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Phosphorus-doped (113) CVD diamond: A breakthrough towards bipolar diamond devices

Detection Limit of Phosphorus in Diamond by High Mass Resolution Secondary‐Ion Mass Spectrometry

New Process for Electrical Contacts on (100) N‐type Diamond

Defect and Threading Dislocations in Single Crystal Diamond: A Focus on Boron and Nitrogen Codoping

Electrical activity of (100) n-type diamond with full donor site incorporation of phosphorus

Attractive electron mobility in (113) n-type phosphorus-doped homoepitaxial diamond

The effect of microstructure and film composition on the mechanical properties of linear antenna CVD diamond thin films

Sensitivity of photoelectron energy loss spectroscopy to surface reconstruction of microcrystalline diamond films

Impact of Nitrogen, Boron and Phosphorus Impurities on the Electronic Structure of Diamond Probed by X-ray Spectroscopies

Behaviour of fission products in UO2: Experimental characterization of the Cs-I-UO2 model system at high temperature

Enhanced tunability and temperature-dependent dielectric characteristics at microwaves of K0.5Na0.5NbO3 thin films epitaxially grown on (100)MgO substrates

Thick and widened high quality heavily boron doped diamond single crystals synthetized with high oxygen flow under high microwave power regime

Impurity-to-band activation energy in phosphorus doped diamond

Nitrogen Investigation by SIMS in Two Wide Band-Gap Semiconductors: Diamond and Silicon Carbide

Thick heavily boron doped CVD diamond films homoepitaxially grown on (111)-oriented substrates

Growth of thick and heavily boron-doped (113)-oriented CVD diamond films

Quantitative analysis of electronic absorption of phosphorus donors in diamond

Homoepitaxial boron-doped diamond with very low compensation

Phosphorus donor incorporation in (1 0 0) homoepitaxial diamond: Role of the lateral growth

n-Type CVD diamond: Epitaxy and doping

Highly photostable NV centre ensembles in CVD diamond produced by using N 2 O as the doping gas

Picosecond dynamics of free and bound excitons in doped diamond

Determination of the phosphorus content in diamond using cathodoluminescence spectroscopy

Phosphorus incorporation and activity in (100)-oriented homoepitaxial diamond layers

Ohmic contacts study of P+N diodes on (111) and (100) diamond

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