UB Paderborn / Katalog / Suche / in CDI

Enhanced photoluminescence of heavily n -doped germanium

Applied physics letters, 2009-05, Vol.94 (19), p.191107-191107-3

2009

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Impurity-to-band activation energy in phosphorus doped diamond

Journal of applied physics, 2013-08, Vol.114 (7)

2013

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Quantitative analysis of electronic absorption of phosphorus donors in diamond

Diamond and related materials, 2017-04, Vol.74, p.24-30

2017

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μ-Raman spectroscopy for stress analysis in high power silicon devices

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.1770-1773

2014

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Sp/sp character of the carbon and hydrogen configuration in micro- and nanocrystalline diamond

Diamond and related materials, 2008-04, Vol.17 (4-5), p.451-456

2008

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Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography

Applied physics letters, 2012-10, Vol.101 (18)

2012

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Distributed electro-thermal model of IGBT chip – Application to top-metal ageing effects in short circuit conditions

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1725-1729

2013

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Optical and electrical properties of laser doped Si:B in the alloy range

Applied surface science, 2012-09, Vol.258 (23), p.9228-9232

2012

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Thickness dependence of the superconducting critical temperature in heavily doped Si:B epilayers

Physical review. B, Condensed matter and materials physics, 2013-08, Vol.88 (6), Article 064508

2013

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Determination of the phosphorus content in diamond using cathodoluminescence spectroscopy

Journal of applied physics, 2007-06, Vol.101 (11), p.113701-113701-4

2007

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Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

Physical review. B, Condensed matter and materials physics, 2010-01, Vol.81 (2), Article 020501

2010

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Synthesis of strained SiGe on Si(100) by pulsed laser induced epitaxy

Thin solid films, 2010-02, Vol.518 (9), p.2542-2545

2010

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New Investigation Possibilities on Forward Biased Power Devices Using Cross Sections

IEEE electron device letters, 2012-04, Vol.33 (4), p.576-578

2012

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IEEE_Xplore

Superconducting properties of laser annealed implanted Si:B epilayers

Superconductor science & technology, 2013-04, Vol.26 (4), p.45009-4

2013

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The n-type doping of diamond: Present status and pending questions

Physica. B, Condensed matter, 2007-12, Vol.401, p.51-56

2007

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Hydrogen incorporation, bonding and stability in nanocrystalline diamond films

Diamond and related materials, 2008-07, Vol.17 (7), p.1127-1131

2008

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Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy

Applied surface science, 2012-09, Vol.258 (23), p.9208-9212

2012

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Silicon incorporation in CVD diamond layers

Physica status solidi. A, Applications and materials science, 2005-09, Vol.202 (11), p.2177-2181

2005

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Cathodoluminescence as a tool to determine the phosphorus concentration in diamond

Physica status solidi. A, Applications and materials science, 2007-09, Vol.204 (9), p.2965-2970

2007

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MOCVD doping technology for phosphorus incorporation in diamond: Influence of the growth temperature on the electrical properties

Diamond and related materials, 2007-04, Vol.16 (4), p.815-818

2007

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n-type CVD diamond doped with phosphorus using the MOCVD technology for dopant incorporation

Physica status solidi. A, Applications and materials science, 2006-09, Vol.203 (12), p.3136-3141

2006

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Thermal behaviour evolution of an IGBT module after aging measured by thermoreflectance

Microelectronics and reliability, 2020-11, Vol.114, p.113843, Article 113843

2020

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Sp3/sp2 character of the carbon and hydrogen configuration in micro-and nanocrystalline diamond

Diamond and related materials, 2008-04, Vol.17 (4-5), p.451-456

2008

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Thermal mapping at the cell level of chips in power modules through the silicone gel using thermoreflectance

Microelectronics and reliability, 2020-02, Vol.105, p.113563, Article 113563

2020

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The p-to-n-type conversion of boron-doped diamond layers by deuteration: New findings

Diamond and related materials, 2007-08, Vol.16 (8), p.1459-1462

2007

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Enhanced photoluminescence of heavily n -doped germanium

Impurity-to-band activation energy in phosphorus doped diamond

Quantitative analysis of electronic absorption of phosphorus donors in diamond

μ-Raman spectroscopy for stress analysis in high power silicon devices

Sp/sp character of the carbon and hydrogen configuration in micro- and nanocrystalline diamond

Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography

Distributed electro-thermal model of IGBT chip – Application to top-metal ageing effects in short circuit conditions

Optical and electrical properties of laser doped Si:B in the alloy range

Thickness dependence of the superconducting critical temperature in heavily doped Si:B epilayers

Determination of the phosphorus content in diamond using cathodoluminescence spectroscopy

Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

Synthesis of strained SiGe on Si(100) by pulsed laser induced epitaxy

New Investigation Possibilities on Forward Biased Power Devices Using Cross Sections

Superconducting properties of laser annealed implanted Si:B epilayers

The n-type doping of diamond: Present status and pending questions

Hydrogen incorporation, bonding and stability in nanocrystalline diamond films

Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy

Silicon incorporation in CVD diamond layers

Cathodoluminescence as a tool to determine the phosphorus concentration in diamond

MOCVD doping technology for phosphorus incorporation in diamond: Influence of the growth temperature on the electrical properties

n-type CVD diamond doped with phosphorus using the MOCVD technology for dopant incorporation

Thermal behaviour evolution of an IGBT module after aging measured by thermoreflectance

Sp3/sp2 character of the carbon and hydrogen configuration in micro-and nanocrystalline diamond

Thermal mapping at the cell level of chips in power modules through the silicone gel using thermoreflectance

The p-to-n-type conversion of boron-doped diamond layers by deuteration: New findings

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