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Recent progress in deep-depletion diamond metal–oxide–semiconductor field-effect transistors

Journal of physics. D, Applied physics, 2021-06, Vol.54 (23), p.233002

2021

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DX center formation in highly Si doped AlN nanowires revealed by trap assisted space-charge limited current

Applied physics letters, 2022-04, Vol.120 (16)

2022

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Optical properties of Ga-doped AlN nanowires

Applied physics letters, 2023-02, Vol.122 (9)

2023

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Shallow donor and DX state in Si doped AlN nanowires grown by molecular beam epitaxy

Applied physics letters, 2021-12, Vol.119 (26)

2021

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Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy

Nanotechnology, 2016-09, Vol.27 (38), p.385202-385202

2016

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Effect of n- and p-type doping concentrations and compensation on the electrical properties of semiconducting diamond

Physica status solidi. A, Applications and materials science, 2016-08, Vol.213 (8), p.2036-2043

2016

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Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective

Applied surface science, 2018-03, Vol.433, p.408-418

2018

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High hole mobility in boron doped diamond for power device applications

Applied physics letters, 2009-03, Vol.94 (9), p.092102-092102-3

2009

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Extreme dielectric strength in boron doped homoepitaxial diamond

Applied physics letters, 2010-11, Vol.97 (22), p.223501-223501-3

2010

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Nanoscale imaging of dopant incorporation in n-type and p-type GaN nanowires by scanning spreading resistance microscopy

Journal of applied physics, 2022-02, Vol.131 (7)

2022

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Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam

Journal of applied physics, 2019-05, Vol.125 (17)

2019

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High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

Micromachines (Basel), 2019-10, Vol.10 (10), p.690

2019

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Determination of Current Leakage Sites in Diamond p–n Junction

Physica status solidi. A, Applications and materials science, 2019-11, Vol.216 (21), p.n/a

2019

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Power Electronics Device Applications of Diamond Semiconductors

Satoshi Koizumi, Hitoshi Umezawa, Julien Pernot, Mariko Suzuki

1, 2018

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Electronic properties of the EC-0.6 eV electron trap in n-type GaN

Journal of applied physics, 2008-01, Vol.103 (2)

2008

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Study of boron doping in MPCVD grown homoepitaxial diamond layers based on cathodoluminescence spectroscopy, secondary ion mass spectroscopy and capacitance–voltage measurements

Diamond and related materials, 2011-07, Vol.20 (7), p.912-916

2011

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Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates

Journal of applied physics, 2014-03, Vol.115 (11)

2014

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H-Terminated Diamond Surface Band Bending Characterization by Angle-Resolved XPS

Surfaces (Basel), 2020-03, Vol.3 (1), p.61-71

2020

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Exciton diffusion coefficient measurement in ZnO nanowires under electron beam irradiation

Nanotechnology, 2018-03, Vol.29 (10), p.105703-105703

2018

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Metallic core conduction in unintentionally doped ZnO nanowire

Applied physics express, 2015-02, Vol.8 (2), p.25001

2015

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Respiratory physiological exploration during self-induced cognitive trance

Respiratory physiology & neurobiology, 2024-09, Vol.327, p.104301, Article 104301

2024

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High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer

Physica status solidi. A, Applications and materials science, 2010-09, Vol.207 (9), p.2088-2092

2010

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Diamond power devices: state of the art, modelling, figures of merit and future perspective

Journal of physics. D, Applied physics, 2020-02, Vol.53 (9), p.93001

2020

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Boron incorporation issues in diamond when TMB is used as precursor: Toward extreme doping levels

Diamond and related materials, 2012-02, Vol.22, p.136-141

2012

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Electronic properties of E3 electron trap in n-type ZnO

Physica Status Solidi. B: Basic Solid State Physics, 2014-01, Vol.251 (1), p.206-210

2014

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Recent progress in deep-depletion diamond metal–oxide–semiconductor field-effect transistors

DX center formation in highly Si doped AlN nanowires revealed by trap assisted space-charge limited current

Optical properties of Ga-doped AlN nanowires

Shallow donor and DX state in Si doped AlN nanowires grown by molecular beam epitaxy

Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy

Effect of n- and p-type doping concentrations and compensation on the electrical properties of semiconducting diamond

Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective

High hole mobility in boron doped diamond for power device applications

Extreme dielectric strength in boron doped homoepitaxial diamond

Nanoscale imaging of dopant incorporation in n-type and p-type GaN nanowires by scanning spreading resistance microscopy

Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

Determination of Current Leakage Sites in Diamond p–n Junction

Power Electronics Device Applications of Diamond Semiconductors

Electronic properties of the EC-0.6 eV electron trap in n-type GaN

Study of boron doping in MPCVD grown homoepitaxial diamond layers based on cathodoluminescence spectroscopy, secondary ion mass spectroscopy and capacitance–voltage measurements

Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates

H-Terminated Diamond Surface Band Bending Characterization by Angle-Resolved XPS

Exciton diffusion coefficient measurement in ZnO nanowires under electron beam irradiation

Metallic core conduction in unintentionally doped ZnO nanowire

Respiratory physiological exploration during self-induced cognitive trance

High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer

Diamond power devices: state of the art, modelling, figures of merit and future perspective

Boron incorporation issues in diamond when TMB is used as precursor: Toward extreme doping levels

Electronic properties of E3 electron trap in n-type ZnO

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