UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 401

Sortiert nach

An All-Optical Quantum Gate in a Semiconductor Quantum Dot

Science (American Association for the Advancement of Science), 2003-08, Vol.301 (5634), p.809-811

2003

Link zum Volltext

Verfügbarkeit prüfen

Rabi oscillations of excitons in single quantum dots

Physical review letters, 2001-09, Vol.87 (13), p.133603-133603, Article 133603

2001

Link zum Volltext

Verfügbarkeit prüfen

Coherent Optical Control of the Quantum State of a Single Quantum Dot

Science (American Association for the Advancement of Science), 1998-11, Vol.282 (5393), p.1473-1476

1998

Link zum Volltext

Verfügbarkeit prüfen

Homogeneous Linewidths in the Optical Spectrum of a Single Gallium Arsenide Quantum Dot

Science (American Association for the Advancement of Science), 1996-07, Vol.273 (5271), p.87-90

1996

Link zum Volltext

Verfügbarkeit prüfen

Effect of interfacial oxygen on the microstructure of MBE-grown homoepitaxial N-polar GaN

Journal of crystal growth, 2015-01, Vol.409, p.14-17

2015

Link zum Volltext

Verfügbarkeit prüfen

Optically Induced Entanglement of Excitons in a Single Quantum Dot

Science (American Association for the Advancement of Science), 2000-09, Vol.289 (5486), p.1906-1909

2000

Link zum Volltext

Verfügbarkeit prüfen

Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Journal of crystal growth, 2013-10, Vol.380, p.14-17

2013

Link zum Volltext

Verfügbarkeit prüfen

Electron and nuclear spin interactions in the optical spectra of single GaAs quantum dots

Physical review letters, 2001-05, Vol.86 (22), p.5176-5179

2001

Link zum Volltext

Verfügbarkeit prüfen

Near-Field Coherent Spectroscopy and Microscopy of a Quantum Dot System

Science (American Association for the Advancement of Science), 2001-09, Vol.293 (5538), p.2224-2227

2001

Link zum Volltext

Verfügbarkeit prüfen

Observation of vertical honeycomb structure in InAlN ∕ GaN heterostructures due to lateral phase separation

Applied physics letters, 2007-02, Vol.90 (8), p.081917-081917-3

2007

Link zum Volltext

Verfügbarkeit prüfen

Electrical characterization of Schottky contacts to N-polar GaN

Solid-state electronics, 2013-08, Vol.86, p.17-21

2013

Link zum Volltext

Verfügbarkeit prüfen

Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures

Solid-state electronics, 2010-06, Vol.54 (6), p.613-615

2010

Link zum Volltext

Verfügbarkeit prüfen

Fine structure splitting in the optical spectra of single GaAs quantum dots

Physical review letters, 1996-04, Vol.76 (16), p.3005-3008

1996

Link zum Volltext

Verfügbarkeit prüfen

Comparison of microstructure of N-polar GaN/AlGaN/GaN heterostructures grown on different substrates

Journal of crystal growth, 2012-10, Vol.357 (C), p.25-29

2012

Link zum Volltext

Verfügbarkeit prüfen

AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization

Journal of crystal growth, 2007-04, Vol.301, p.429-433

2007

Link zum Volltext

Verfügbarkeit prüfen

Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

Solid-state electronics, 2010-11, Vol.54 (11), p.1470-1473

2010

Link zum Volltext

Verfügbarkeit prüfen

Biexciton quantum coherence in a single quantum dot

Physical review letters, 2002-03, Vol.88 (11), p.117901-117901, Article 117901

2002

Link zum Volltext

Verfügbarkeit prüfen

Nuclear Spectroscopy in Single Quantum Dots: Nanoscopic Raman Scattering and Nuclear Magnetic Resonance

Science (American Association for the Advancement of Science), 1997-07, Vol.277 (5322), p.85-88

1997

Link zum Volltext

Verfügbarkeit prüfen

Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs

Journal of crystal growth, 2003-04, Vol.251 (1), p.481-486

2003

Link zum Volltext

Verfügbarkeit prüfen

Epitaxial growth of SrCaTiO3 films on GaN by molecular beam epitaxy with a TiO2 buffer layer

Journal of applied physics, 2020-06, Vol.127 (21)

2020

Link zum Volltext

Verfügbarkeit prüfen

A cat's eye multiple quantum-well modulating retro-reflector

IEEE photonics technology letters, 2003-03, Vol.15 (3), p.461-463

2003

Link zum Volltext
Volltext

Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

Applied physics letters, 2003-08, Vol.83 (8), p.1650-1652

2003

Link zum Volltext

Verfügbarkeit prüfen

Imaging Spectroscopy of Two-Dimensional Excitons in a Narrow GaAs/AlGaAs Quantum Well

Physical review letters, 1999-09, Vol.83 (13), p.2652-2655

1999

Link zum Volltext

Verfügbarkeit prüfen

Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications

Journal of crystal growth, 2005-07, Vol.281 (1), p.32-37

2005

Link zum Volltext

Verfügbarkeit prüfen

Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates

Journal of crystal growth, 2007-07, Vol.305 (2), p.340-345

2007

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 401

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(301)
Mit Volltextzugriff
(372)

Publikationsform

2 weitere anzeigen...

Weniger anzeigen...

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(240)
Physics
(159)
Physical Sciences
(151)
Technology
(115)
Physics, Applied
(111)
Engineering
(68)
Exact Sciences And Technology
(68)
Materials Science
(60)
Engineering, Electrical & Electronic
(54)
Life Sciences & Biomedicine
(48)
Physics, Condensed Matter
(42)
Humans
(40)
Materials Science, Multidisciplinary
(40)
Science & Technology - Other Topics
(38)
Gallium Nitrides
(30)
Molecular Beam Epitaxy
(28)
Male
(27)
Nanoscience & Nanotechnology
(27)
Applied Sciences
(26)
Condensed Matter: Electronic Structure, Electrical, Magnetic, And Optical Properties
(23)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

An All-Optical Quantum Gate in a Semiconductor Quantum Dot

Rabi oscillations of excitons in single quantum dots

Coherent Optical Control of the Quantum State of a Single Quantum Dot

Homogeneous Linewidths in the Optical Spectrum of a Single Gallium Arsenide Quantum Dot

Effect of interfacial oxygen on the microstructure of MBE-grown homoepitaxial N-polar GaN

Optically Induced Entanglement of Excitons in a Single Quantum Dot

Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Electron and nuclear spin interactions in the optical spectra of single GaAs quantum dots

Near-Field Coherent Spectroscopy and Microscopy of a Quantum Dot System

Observation of vertical honeycomb structure in InAlN ∕ GaN heterostructures due to lateral phase separation

Electrical characterization of Schottky contacts to N-polar GaN

Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures

Fine structure splitting in the optical spectra of single GaAs quantum dots

Comparison of microstructure of N-polar GaN/AlGaN/GaN heterostructures grown on different substrates

AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization

Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

Biexciton quantum coherence in a single quantum dot

Nuclear Spectroscopy in Single Quantum Dots: Nanoscopic Raman Scattering and Nuclear Magnetic Resonance

Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs

Epitaxial growth of SrCaTiO3 films on GaN by molecular beam epitaxy with a TiO2 buffer layer

A cat's eye multiple quantum-well modulating retro-reflector

Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

Imaging Spectroscopy of Two-Dimensional Excitons in a Narrow GaAs/AlGaAs Quantum Well

Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications

Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates

Suchergebnisse filtern