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Trapping effects in GaN and SiC microwave FETs

Proceedings of the IEEE, 2002-06, Vol.90 (6), p.1048-1058

2002

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Trapping effects and microwave power performance in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2001-03, Vol.48 (3), p.465-471

2001

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Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Journal of crystal growth, 2013-10, Vol.380, p.14-17

2013

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Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures

Solid-state electronics, 2010-06, Vol.54 (6), p.613-615

2010

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A cat's eye multiple quantum-well modulating retro-reflector

IEEE photonics technology letters, 2003-03, Vol.15 (3), p.461-463

2003

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High-Performance Chirped Electrode Design for Cat's Eye Retro-Reflector Modulators

IEEE photonics technology letters, 2006-11, Vol.18 (21), p.2278-2280

2006

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AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization

Journal of crystal growth, 2007-04, Vol.301, p.429-433

2007

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AlGaN/GaN heterostructure field-effect transistor model including thermal effects

IEEE transactions on electron devices, 2000-11, Vol.47 (11), p.2031-2036

2000

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Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors

Electronics letters, 2001-05, Vol.37 (10), p.661-662

2001

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Microwave power performance of MBE-grown AlGaN/GaN HEMTs on HVPE GaN substrates

Electronics letters, 2006, Vol.42 (11), p.663-665

2006

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Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications

Journal of crystal growth, 2005-07, Vol.281 (1), p.32-37

2005

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Fabrication and characterization of GaN FETs

Solid-state electronics, 1997-10, Vol.41 (10), p.1549-1554

1997

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Simulations of direct-die-attached microchannel coolers for the thermal management of GaN-on-SiC microwave amplifiers

IEEE transactions on components and packaging technologies, 2005-12, Vol.28 (4), p.797-809

2005

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Experimental investigation of microchannel coolers for the high heat flux thermal management of GaN-on-SiC semiconductor devices

International journal of heat and mass transfer, 2007-11, Vol.50 (23), p.4767-4779

2007

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Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation

IEEE electron device letters, 2005-04, Vol.26 (4), p.225-227

2005

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Improved reliability of AlGaN-GaN HEMTs using an NH3 plasma treatment prior to sin passivation

IEEE electron device letters, 2005-04, Vol.26 (4), p.225-227

2005

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Electrical characterization of Schottky contacts to N-polar GaN

Solid-state electronics, 2013-08, Vol.86, p.17-21

2013

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High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC

IEEE electron device letters, 2003-11, Vol.24 (11), p.677-679

2003

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A surface-normal coupled-quantum-well modulator at 1.55 μm

IEEE photonics technology letters, 2004-09, Vol.16 (9), p.2036-2038

2004

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Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

Solid-state electronics, 2010-11, Vol.54 (11), p.1470-1473

2010

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AlN/GaN insulated gate HEMTs with HfO2 gate dielectric

Electronics letters, 2009, Vol.45 (8), p.423

2009

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AlGaN/GaN HEMTs grown on SiC substrates

Electronics letters, 1997-01, Vol.33 (3), p.242

1997

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Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates

Journal of crystal growth, 2007-07, Vol.305 (2), p.340-345

2007

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Effect of Al∕N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN∕GaN heterostructures

Applied physics letters, 2004-10, Vol.85 (17), p.3786-3788

2004

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Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs

Journal of crystal growth, 2003-04, Vol.251 (1), p.481-486

2003

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Trapping effects in GaN and SiC microwave FETs

Trapping effects and microwave power performance in AlGaN/GaN HEMTs

Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures

A cat's eye multiple quantum-well modulating retro-reflector

High-Performance Chirped Electrode Design for Cat's Eye Retro-Reflector Modulators

AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization

AlGaN/GaN heterostructure field-effect transistor model including thermal effects

Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors

Microwave power performance of MBE-grown AlGaN/GaN HEMTs on HVPE GaN substrates

Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications

Fabrication and characterization of GaN FETs

Simulations of direct-die-attached microchannel coolers for the thermal management of GaN-on-SiC microwave amplifiers

Experimental investigation of microchannel coolers for the high heat flux thermal management of GaN-on-SiC semiconductor devices

Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation

Improved reliability of AlGaN-GaN HEMTs using an NH3 plasma treatment prior to sin passivation

Electrical characterization of Schottky contacts to N-polar GaN

High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC

A surface-normal coupled-quantum-well modulator at 1.55 μm

Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

AlN/GaN insulated gate HEMTs with HfO2 gate dielectric

AlGaN/GaN HEMTs grown on SiC substrates

Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates

Effect of Al∕N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN∕GaN heterostructures

Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs

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