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Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors

IEEE transactions on industrial electronics (1982), 2016-04, Vol.63 (4), p.1995-2004

2016

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Performance and Short-Circuit Reliability of SiC MOSFETs With Enhanced JFET Doping Design

IEEE transactions on electron devices, 2023-05, Vol.70 (5), p.1-8

2023

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A Novel SiC MOSFET With Embedded Auto-Adjust JFET With Improved Short Circuit Performance

IEEE electron device letters, 2021-12, Vol.42 (12), p.1751-1754

2021

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Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C

IEEE electron device letters, 2017-08, Vol.38 (8), p.1082-1085

2017

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A Survey of Wide Bandgap Power Semiconductor Devices

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2155-2163

2014

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Normally-off 400 °C Operation of n- and p-JFETs With a Side-Gate Structure Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate

IEEE electron device letters, 2019-06, Vol.40 (6), p.866-869, Article 866

2019

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Static and Dynamic Characteristics of a 1200-V/22-mΩ Normally-Off SiC/GaN Cascode Device Built with Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT

IEEE transactions on power electronics, 2023-10, Vol.38 (10), p.1-10

2023

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A Single-Drive SiC-JFET-SCM for Solid State Circuit Breaker in MVDC Distribution Networks

IEEE transactions on industrial electronics (1982), 2023-11, Vol.70 (11), p.11121-11131

2023

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Protecting SiC JFET From Gate Overstress in GaN/SiC Cascode Device Without Compromising Switching Performance

IEEE transactions on power electronics, 2024-05, Vol.39 (5), p.5567-5575

2024

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Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5329-5336

2018

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SiC versus Si-Evaluation of Potentials for Performance Improvement of Inverter and DC-DC Converter Systems by SiC Power Semiconductors

IEEE transactions on industrial electronics (1982), 2011-07, Vol.58 (7), p.2872-2882

2011

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Charge-based Model for Junction FETs

IEEE transactions on electron devices, 2018-07, Vol.65 (7), p.2694-2698

2018

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(Ultra)Wide-Bandgap Vertical Power FinFETs

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.3960-3971

2020

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Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect

IEEE electron device letters, 2016-05, Vol.37 (5), p.625-628

2016

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Wide-Bandgap Solid-State Circuit Breakers for DC Power Systems: Device and Circuit Considerations

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.294-300

2015

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A Novel Asymmetric Trench SiC MOSFET With an Integrated JFET for Improved Reverse Conduction Performance

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1546-1552

2024

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Cascaded SiC JFET Topology for High-Voltage Solid-State Circuit Breaker Applications

IEEE transactions on industry applications, 2023-03, Vol.59 (2), p.2326-2339

2023

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High-Power Modular Multilevel Converters With SiC JFETs

IEEE transactions on power electronics, 2012-01, Vol.27 (1), p.28-36

2012

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A Backside-Illuminated 3.5 μm Pixel With 86% Demodulation Contrast at 1.0 V Voltage Swing for Indirect Time-of-Flight Image Sensors

IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4712-4718

2023

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4H-SiC Super-Junction JFET: Design and Experimental Demonstration

IEEE electron device letters, 2020-03, Vol.41 (3), p.445-448

2020

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Prospects and Development of Vertical Normally-off JFETs in SiC

Journal of Telecommunications and Information Technology, 2023-06 (4), p.25-36

Bakowski, Mietek

2023

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A Self-Powered Bidirectional DC Solid-State Circuit Breaker Based on SiC JFETs for DC Microgrids

IEEE transactions on industrial electronics (1982), 2024-09, p.1-11

2024

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A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

IEEE transactions on power electronics, 2020-09, Vol.35 (9), p.9671-9681

2020

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650-V Normally-OFF GaN/SiC Cascode Device for Power Switching Applications

IEEE transactions on industrial electronics (1982), 2022-09, Vol.69 (9), p.8997-9006

2022

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Tuning Avalanche Path in Vertical GaN JFETs By Gate Driver Design

IEEE transactions on power electronics, 2022-05, Vol.37 (5), p.5433-5443

2022

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Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors

Performance and Short-Circuit Reliability of SiC MOSFETs With Enhanced JFET Doping Design

A Novel SiC MOSFET With Embedded Auto-Adjust JFET With Improved Short Circuit Performance

Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C

A Survey of Wide Bandgap Power Semiconductor Devices

Normally-off 400 °C Operation of n- and p-JFETs With a Side-Gate Structure Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate

Static and Dynamic Characteristics of a 1200-V/22-mΩ Normally-Off SiC/GaN Cascode Device Built with Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT

A Single-Drive SiC-JFET-SCM for Solid State Circuit Breaker in MVDC Distribution Networks

Protecting SiC JFET From Gate Overstress in GaN/SiC Cascode Device Without Compromising Switching Performance

Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth

SiC versus Si-Evaluation of Potentials for Performance Improvement of Inverter and DC-DC Converter Systems by SiC Power Semiconductors

Charge-based Model for Junction FETs

(Ultra)Wide-Bandgap Vertical Power FinFETs

Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect

Wide-Bandgap Solid-State Circuit Breakers for DC Power Systems: Device and Circuit Considerations

A Novel Asymmetric Trench SiC MOSFET With an Integrated JFET for Improved Reverse Conduction Performance

Cascaded SiC JFET Topology for High-Voltage Solid-State Circuit Breaker Applications

High-Power Modular Multilevel Converters With SiC JFETs

A Backside-Illuminated 3.5 μm Pixel With 86% Demodulation Contrast at 1.0 V Voltage Swing for Indirect Time-of-Flight Image Sensors

4H-SiC Super-Junction JFET: Design and Experimental Demonstration

Prospects and Development of Vertical Normally-off JFETs in SiC

A Self-Powered Bidirectional DC Solid-State Circuit Breaker Based on SiC JFETs for DC Microgrids

A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

650-V Normally-OFF GaN/SiC Cascode Device for Power Switching Applications

Tuning Avalanche Path in Vertical GaN JFETs By Gate Driver Design

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