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Self-Aligned Process for Selectively Etched p-GaN-Gated AlGaN/GaN-on-Si HFETs

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3732-3738

2018

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Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5329-5336

2018

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Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon

IEEE transactions on electron devices, 2018-08, Vol.65 (8), p.3192-3198

2018

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Flexible Large‐Area Light‐Emitting Devices Based on WS2 Monolayers

Advanced optical materials, 2020-10, Vol.8 (20), p.n/a

2020

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Button shear testing for adhesion measurements of 2D materials

Nature communications, 2024-03, Vol.15 (1), p.2430-2430, Article 2430

2024

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Atomically resolved electronic properties in single layer graphene on α-Al2O3 (0001) by chemical vapor deposition

Scientific reports, 2022-11, Vol.12 (1), p.18743-18743, Article 18743

2022

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AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency

Electronics letters, 2021-02, Vol.57 (3), p.148-150

2021

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Development of a III-nitride electro-optical modulator for UV-vis

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCC04

2019

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Depletion-and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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Optimization of Layer Transfer and Photolithography for Device Integration of 2D-TMDC

Crystals (Basel), 2023-10, Vol.13 (10), p.1474

2023

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Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors

Journal of applied physics, 2015-03, Vol.117 (10)

2015

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CVD graphene-MoS2 Van der Waals heterostructures on the millimeter-scale

Micro and Nano Engineering, 2024-06, Vol.23, p.100256, Article 100256

2024

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Characterization of GaN-based p-channel device structures at elevated temperatures

Semiconductor science and technology, 2014-07, Vol.29 (7), p.75002

2014

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Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT

IEEE electron device letters, 2013-08, Vol.34 (8), p.978-980

2013

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Impact of Carbon Impurities on Air Stability of MOCVD 2D-MoS2

Surfaces (Basel), 2023-12, Vol.6 (4), p.351-363

2023

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The controlled growth of GaN microrods on Si(111) substrates by MOCVD

Journal of crystal growth, 2015-03, Vol.414, p.200-204

2015

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Investigations of the electrochemical stability of InGaN photoanodes in different electrolytes

Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.895-899

2015

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First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET

Semiconductor science and technology, 2012-05, Vol.27 (5), p.55004

2012

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Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers

Journal of applied physics, 2015-06, Vol.117 (21)

2015

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InGaN: Direct correlation of nanoscopic morphology features with optical and structural properties

Applied physics letters, 2014-08, Vol.105 (7), p.72108

2014

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First Small-Signal Data of GaN-Based p-Channel Heterostructure Field Effect Transistors

Japanese Journal of Applied Physics, 2013-12, Vol.52 (12), p.128001-128001-2

2013

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AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon ( [formula omitted]) substrates

Solid-state electronics, 2002-10, Vol.46 (10), p.1535-1539

2002

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Growth and Characterization of Vertical and Lateral p‐n Junctions Formed by Selective‐Area p‐GaN MOVPE on Patterned Templates

Physica status solidi. A, Applications and materials science, 2019-01, Vol.216 (2), p.n/a

2019

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The MoS 2 -Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS 2 Band Structure

Journal of physical chemistry. C, 2023-06, Vol.127 (22), p.10878-10887

2023

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Highly Responsive Flexible Photodetectors Based on MOVPE Grown Uniform Few-Layer MoS2

ACS photonics, 2020-06, Vol.7 (6), p.1388-1395

2020

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Self-Aligned Process for Selectively Etched p-GaN-Gated AlGaN/GaN-on-Si HFETs

Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth

Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon

Flexible Large‐Area Light‐Emitting Devices Based on WS2 Monolayers

Button shear testing for adhesion measurements of 2D materials

Atomically resolved electronic properties in single layer graphene on α-Al2O3 (0001) by chemical vapor deposition

AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency

Development of a III-nitride electro-optical modulator for UV-vis

Depletion-and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates

Optimization of Layer Transfer and Photolithography for Device Integration of 2D-TMDC

Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors

CVD graphene-MoS2 Van der Waals heterostructures on the millimeter-scale

Characterization of GaN-based p-channel device structures at elevated temperatures

Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT

Impact of Carbon Impurities on Air Stability of MOCVD 2D-MoS2

The controlled growth of GaN microrods on Si(111) substrates by MOCVD

Investigations of the electrochemical stability of InGaN photoanodes in different electrolytes

First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET

Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers

InGaN: Direct correlation of nanoscopic morphology features with optical and structural properties

First Small-Signal Data of GaN-Based p-Channel Heterostructure Field Effect Transistors

AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon ( [formula omitted]) substrates

Growth and Characterization of Vertical and Lateral p‐n Junctions Formed by Selective‐Area p‐GaN MOVPE on Patterned Templates

The MoS 2 -Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS 2 Band Structure

Highly Responsive Flexible Photodetectors Based on MOVPE Grown Uniform Few-Layer MoS2

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