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Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates

Journal of crystal growth, 2016-12, Vol.456, p.121-132

2016

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Electrical characterisation of epitaxial AlN/Nb2N heterostructures grown by molecular beam epitaxy

Electronics letters, 2016-07, Vol.52 (14), p.1263-1264

2016

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Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Journal of crystal growth, 2013-10, Vol.380, p.14-17

2013

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Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures

Solid-state electronics, 2010-06, Vol.54 (6), p.613-615

2010

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Pulsed characteristics for high current, large area GaN/Ain resonant tunneling diodes

2019 Device Research Conference (DRC), 2019, p.145-146

2019

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Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy

Physica. B, Condensed matter, 2007-12, Vol.401, p.327-330

2007

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AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization

Journal of crystal growth, 2007-04, Vol.301, p.429-433

2007

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Microwave power performance of MBE-grown AlGaN/GaN HEMTs on HVPE GaN substrates

Electronics letters, 2006, Vol.42 (11), p.663-665

2006

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Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications

Journal of crystal growth, 2005-07, Vol.281 (1), p.32-37

2005

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Electrical characterisation of epitaxial AlN/Nb 2 N heterostructures grown by molecular beam epitaxy

Electronics letters, 2016-07, Vol.52 (14), p.1263-1264

2016

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Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation

IEEE electron device letters, 2005-04, Vol.26 (4), p.225-227

2005

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Optical and magnetic resonance studies of Be-doped GaN bulk crystals

Journal of crystal growth, 2014-10, Vol.403, p.119-123

2014

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Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Journal of crystal growth, 2015-09, Vol.425, p.119-124

2015

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Effect of interfacial oxygen on the microstructure of MBE-grown homoepitaxial N-polar GaN

Journal of crystal growth, 2015-01, Vol.409, p.14-17

2015

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Improved reliability of AlGaN-GaN HEMTs using an NH3 plasma treatment prior to sin passivation

IEEE electron device letters, 2005-04, Vol.26 (4), p.225-227

2005

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Electrical characterization of Schottky contacts to N-polar GaN

Solid-state electronics, 2013-08, Vol.86, p.17-21

2013

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Investigation of N-Polar AlGaN/GaN and InAlN/GaN Thin Films Grown by MBE

Microscopy and microanalysis, 2016-07, Vol.22 (S3), p.1570-1571

2016

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Comparison of microstructure of N-polar GaN/AlGaN/GaN heterostructures grown on different substrates

Journal of crystal growth, 2012-10, Vol.357 (C), p.25-29

2012

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AlN/GaN insulated gate HEMTs with HfO2 gate dielectric

Electronics letters, 2009, Vol.45 (8), p.423

2009

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Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

Solid-state electronics, 2010-11, Vol.54 (11), p.1470-1473

2010

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Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates

Journal of crystal growth, 2007-07, Vol.305 (2), p.340-345

2007

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Effect of Al∕N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN∕GaN heterostructures

Applied physics letters, 2004-10, Vol.85 (17), p.3786-3788

2004

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Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs

Journal of crystal growth, 2003-04, Vol.251 (1), p.481-486

2003

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Effect of Al∕N flux ratio during nucleation layer growth on the microstructure of GaN films grown by molecular-beam epitaxy

Applied physics letters, 2006-01, Vol.88 (1), p.011916-011916-3

2006

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MBE growth of AlGaN∕GaN HEMTs with high power density

Electronics letters, 2002-12, Vol.38 (25), p.1740

2002

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Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates

Electrical characterisation of epitaxial AlN/Nb2N heterostructures grown by molecular beam epitaxy

Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures

Pulsed characteristics for high current, large area GaN/Ain resonant tunneling diodes

Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy

AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization

Microwave power performance of MBE-grown AlGaN/GaN HEMTs on HVPE GaN substrates

Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications

Electrical characterisation of epitaxial AlN/Nb 2 N heterostructures grown by molecular beam epitaxy

Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation

Optical and magnetic resonance studies of Be-doped GaN bulk crystals

Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Effect of interfacial oxygen on the microstructure of MBE-grown homoepitaxial N-polar GaN

Improved reliability of AlGaN-GaN HEMTs using an NH3 plasma treatment prior to sin passivation

Electrical characterization of Schottky contacts to N-polar GaN

Investigation of N-Polar AlGaN/GaN and InAlN/GaN Thin Films Grown by MBE

Comparison of microstructure of N-polar GaN/AlGaN/GaN heterostructures grown on different substrates

AlN/GaN insulated gate HEMTs with HfO2 gate dielectric

Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates

Effect of Al∕N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN∕GaN heterostructures

Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs

Effect of Al∕N flux ratio during nucleation layer growth on the microstructure of GaN films grown by molecular-beam epitaxy

MBE growth of AlGaN∕GaN HEMTs with high power density

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