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Effect of interfacial oxygen on the microstructure of MBE-grown homoepitaxial N-polar GaN

Journal of crystal growth, 2015-01, Vol.409, p.14-17

2015

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Optical and magnetic resonance studies of Be-doped GaN bulk crystals

Journal of crystal growth, 2014-10, Vol.403, p.119-123

2014

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Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Journal of crystal growth, 2013-10, Vol.380, p.14-17

2013

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Electrical characterization of Schottky contacts to N-polar GaN

Solid-state electronics, 2013-08, Vol.86, p.17-21

2013

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Second Harmonic Generation from Phononic Epsilon-Near-Zero Berreman Modes in Ultrathin Polar Crystal Films

ACS photonics, 2019-06, Vol.6 (6), p.1365-1371

2019

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Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures

Solid-state electronics, 2010-06, Vol.54 (6), p.613-615

2010

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Comparison of microstructure of N-polar GaN/AlGaN/GaN heterostructures grown on different substrates

Journal of crystal growth, 2012-10, Vol.357 (C), p.25-29

2012

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Investigation of Switching Time in GaN/AlN Resonant Tunneling Diodes by Experiments and P-SPICE Models

IEEE transactions on electron devices, 2020-01, Vol.67 (1), p.75-79

2020

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Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

Solid-state electronics, 2010-11, Vol.54 (11), p.1470-1473

2010

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AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization

Journal of crystal growth, 2007-04, Vol.301, p.429-433

2007

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Epitaxial growth of SrCaTiO3 films on GaN by molecular beam epitaxy with a TiO2 buffer layer

Journal of applied physics, 2020-06, Vol.127 (21)

2020

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Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

Applied physics letters, 2003-08, Vol.83 (8), p.1650-1652

2003

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Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates

Journal of crystal growth, 2016-12, Vol.456, p.121-132

2016

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Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Journal of crystal growth, 2015-09, Vol.425, p.119-124

2015

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Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications

Journal of crystal growth, 2005-07, Vol.281 (1), p.32-37

2005

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Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates

Journal of crystal growth, 2007-07, Vol.305 (2), p.340-345

2007

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Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors

Applied physics letters, 2011-01, Vol.98 (2)

2011

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Microwave power performance of MBE-grown AlGaN/GaN HEMTs on HVPE GaN substrates

Electronics letters, 2006, Vol.42 (11), p.663-665

2006

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Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs

Journal of crystal growth, 2003-04, Vol.251 (1), p.481-486

2003

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Incorporation kinetics of indium and gallium in indium gallium nitride: A phenomenological model

Journal of applied physics, 2001-02, Vol.89 (4), p.2452-2457

Storm, D. F.

2001

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Observation of vertical honeycomb structure in InAlN ∕ GaN heterostructures due to lateral phase separation

Applied physics letters, 2007-02, Vol.90 (8), p.081917-081917-3

2007

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Site-specific Mössbauer evidence of structure-induced magnetic phase transition in fcc Fe(100) thin films

Physical review letters, 1995-05, Vol.74 (22), p.4531-4534

1995

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HfO2-insulated gate N-polar GaN HEMTs with high breakdown voltage

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1630-1633

2011

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Characterization of N-polar GaN/AlGaN/GaN Heterostructures Using Electron Holography

Microscopy and microanalysis, 2014-08, Vol.20 (S3), p.258-259

2014

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N-polar n+ GaN cap development for low ohmic contact resistance to inverted HEMTs

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.894-897

2012

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Effect of interfacial oxygen on the microstructure of MBE-grown homoepitaxial N-polar GaN

Optical and magnetic resonance studies of Be-doped GaN bulk crystals

Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Electrical characterization of Schottky contacts to N-polar GaN

Second Harmonic Generation from Phononic Epsilon-Near-Zero Berreman Modes in Ultrathin Polar Crystal Films

Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures

Comparison of microstructure of N-polar GaN/AlGaN/GaN heterostructures grown on different substrates

Investigation of Switching Time in GaN/AlN Resonant Tunneling Diodes by Experiments and P-SPICE Models

Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization

Epitaxial growth of SrCaTiO3 films on GaN by molecular beam epitaxy with a TiO2 buffer layer

Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates

Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications

Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates

Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors

Microwave power performance of MBE-grown AlGaN/GaN HEMTs on HVPE GaN substrates

Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs

Incorporation kinetics of indium and gallium in indium gallium nitride: A phenomenological model

Observation of vertical honeycomb structure in InAlN ∕ GaN heterostructures due to lateral phase separation

Site-specific Mössbauer evidence of structure-induced magnetic phase transition in fcc Fe(100) thin films

HfO2-insulated gate N-polar GaN HEMTs with high breakdown voltage

Characterization of N-polar GaN/AlGaN/GaN Heterostructures Using Electron Holography

N-polar n+ GaN cap development for low ohmic contact resistance to inverted HEMTs

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