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Optical gain in GaAsBi/GaAs quantum well diode lasers

Scientific reports, 2016-07, Vol.6 (1), p.28863-28863, Article 28863

2016

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GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

Scientific reports, 2017-04, Vol.7 (1), p.46371-46371, Article 46371

2017

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A Modeling Study of Electron Transport in GaN/AlGaN Superlattices Using Monte Carlo Simulation

physica status solidi (b), 2024-02, Vol.261 (2), p.n/a

2024

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Criteria for the Use of Approximations for Full Band Structures of Compound III–V Semiconductor Quantum Wells

physica status solidi (b), 2022-04, Vol.259 (4), p.n/a

2022

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Giant bowing of the band gap and spin-orbit splitting energy in GaP 1-x Bi x dilute bismide alloys

Scientific reports, 2019-12, Vol.9 (1), p.6835

2019

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Giant bowing of the band gap and spin-orbit splitting energy in GaP1−xBix dilute bismide alloys

Scientific reports, 2019-05, Vol.9 (1), p.6835-6835, Article 6835

2019

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Highly mismatched III–V semiconductor alloys applied in multiple quantum well photovoltaics

IET optoelectronics, 2018-02, Vol.12 (1), p.15-19

2018

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Modeling Dilute Nitride 1.3 μm Quantum Well Lasers: Incorporation of N Compositional Fluctuations

IEEE journal of selected topics in quantum electronics, 2013-09, Vol.19 (5), p.1-9

2013

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Modelling of the effects of conduction band fluctuations caused by nitrogen clustering in GaInNAs materials

Physica status solidi. C, 2011-05, Vol.8 (5), p.1646-1649

2011

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Comparative Study of Mode Control in Vertical-Cavity Surface-Emitting Lasers With Photonic Crystal and Micropillar Etching

IEEE journal of quantum electronics, 2011-09, Vol.47 (9), p.1257-1265

2011

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1.3-μm Quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: A theoretical study

IEEE journal of quantum electronics, 2002-12, Vol.38 (12), p.1553-1564

2002

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Single impurity Anderson model and band anti-crossing in the Ga1-xInxNyAs1-y material system

Physica status solidi. A, Applications and materials science (Print), 2008, Vol.205 (1), p.120-128

2008

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Modeling of chirped pulse propagation through a mini-stop band in a two-dimensional photonic crystal waveguide

Journal of the Optical Society of America. B, Optical physics, 2007-07, Vol.24 (7), p.1575

2007

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Theory of Highly-Strained InAs Quantum Well Lasers Grown on InP for Optical Communications at 2 µm

2022 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2022, p.1-2

2022

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Strain-Compensated Type-II \text\text/\text\text "W" Quantum Wells for GaAs-Based Telecom Lasers

2022 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2022, p.1-2

2022

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Theory and design of In x Ga 1− x As 1− y Bi y mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 μ m on InP substrates

Semiconductor science and technology, 2018-09, Vol.33 (9), p.94007

2018

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Theory and design of InxGa1−xAs1−yBiy mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 m on InP substrates

Semiconductor science and technology, 2018-08, Vol.33 (9)

2018

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Modeling Dilute Nitride 1.3 [mu]m Quantum Well Lasers: Incorporation of N Compositional Fluctuations

IEEE journal of selected topics in quantum electronics, 2013-09, Vol.19 (5), p.1900509

2013

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Type-II GaAs1-xBix/GaNyAs1-y "W" quantum wells for strain-compensated GaAs-based telecom lasers

2021 27th International Semiconductor Laser Conference (ISLC), 2021, p.1-2

2021

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Theoretical Study on Dilute Nitride 1.3 \mu Quantum Well Semiconductor Optical Amplifiers: Incorporation of N Compositional Fluctuations

IEEE journal of quantum electronics, 2013-10, Vol.49 (10), p.811-820

2013

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Theoretical modeling of nonequilibrium optical phonons and electron energy relaxation in GaN

Journal of applied physics, 1999-02, Vol.85 (3), p.1475-1480

1999

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Investigation of 2-D-lattice distributed reflector lasers

IEEE journal of quantum electronics, 2002-11, Vol.38 (11), p.1485-1492

2002

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Single impurity Anderson model and band anti-crossing in the Ga1-x Inx Ny As1-y material system

Physica status solidi. A, Applications and materials science, 2008-01, Vol.205 (1), p.120-128

2008

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Single impurity Anderson model and band anti‐crossing in the Ga 1– x In x N y As 1– y material system

Physica status solidi. A, Applications and materials science, 2008-01, Vol.205 (1), p.120-128

2008

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Impact of realistic energy levels on the efficiency of intermediate Band Solar Cells: Impact of carrier loss

2015 17th International Conference on Transparent Optical Networks (ICTON), 2015, p.1-1

2015

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Optical gain in GaAsBi/GaAs quantum well diode lasers

GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

A Modeling Study of Electron Transport in GaN/AlGaN Superlattices Using Monte Carlo Simulation

Criteria for the Use of Approximations for Full Band Structures of Compound III–V Semiconductor Quantum Wells

Giant bowing of the band gap and spin-orbit splitting energy in GaP 1-x Bi x dilute bismide alloys

Giant bowing of the band gap and spin-orbit splitting energy in GaP1−xBix dilute bismide alloys

Highly mismatched III–V semiconductor alloys applied in multiple quantum well photovoltaics

Modeling Dilute Nitride 1.3 μm Quantum Well Lasers: Incorporation of N Compositional Fluctuations

Modelling of the effects of conduction band fluctuations caused by nitrogen clustering in GaInNAs materials

Comparative Study of Mode Control in Vertical-Cavity Surface-Emitting Lasers With Photonic Crystal and Micropillar Etching

1.3-μm Quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: A theoretical study

Single impurity Anderson model and band anti-crossing in the Ga1-xInxNyAs1-y material system

Modeling of chirped pulse propagation through a mini-stop band in a two-dimensional photonic crystal waveguide

Theory of Highly-Strained InAs Quantum Well Lasers Grown on InP for Optical Communications at 2 µm

Strain-Compensated Type-II \text\text/\text\text "W" Quantum Wells for GaAs-Based Telecom Lasers

Theory and design of In x Ga 1− x As 1− y Bi y mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 μ m on InP substrates

Theory and design of InxGa1−xAs1−yBiy mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 m on InP substrates

Modeling Dilute Nitride 1.3 [mu]m Quantum Well Lasers: Incorporation of N Compositional Fluctuations

Type-II GaAs1-xBix/GaNyAs1-y "W" quantum wells for strain-compensated GaAs-based telecom lasers

Theoretical Study on Dilute Nitride 1.3 \mu Quantum Well Semiconductor Optical Amplifiers: Incorporation of N Compositional Fluctuations

Theoretical modeling of nonequilibrium optical phonons and electron energy relaxation in GaN

Investigation of 2-D-lattice distributed reflector lasers

Single impurity Anderson model and band anti-crossing in the Ga1-x Inx Ny As1-y material system

Single impurity Anderson model and band anti‐crossing in the Ga 1– x In x N y As 1– y material system

Impact of realistic energy levels on the efficiency of intermediate Band Solar Cells: Impact of carrier loss

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