UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere

Applied physics letters, 2024-04, Vol.124 (18)

2024

Volltextzugriff (PDF)

N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality

Physica. B, Condensed matter, 2020-03, Vol.580, p.411819, Article 411819

2020

Volltextzugriff (PDF)

On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC

Journal of applied physics, 2022-02, Vol.131 (5)

2022

Volltextzugriff (PDF)

Thermal conductivity of ScxAl1−xN and YxAl1−xN alloys

Applied physics letters, 2023-05, Vol.122 (18)

2023

Volltextzugriff (PDF)

Thermal conductivity of ultra-wide bandgap thin layers – High Al-content AlGaN and β-Ga2O3

Physica. B, Condensed matter, 2020-02, Vol.579, p.411810, Article 411810

2020

Volltextzugriff (PDF)

Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect

Applied physics letters, 2022-06, Vol.120 (25)

2022

Volltextzugriff (PDF)

Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition

Vacuum, 2023-11, Vol.217, Article 112481

2023

Volltextzugriff (PDF)

High-quality N-polar GaN optimization by multi-step temperature growth process

Journal of crystal growth, 2023-02, Vol.603, p.127002, Article 127002

2023

Volltextzugriff (PDF)

On the thermal conductivity anisotropy in wurtzite GaN

AIP advances, 2023-09, Vol.13 (9), p.095009-095009-6

2023

Volltextzugriff (PDF)

Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties

Applied physics letters, 2024-09, Vol.125 (12)

2024

Volltextzugriff (PDF)

Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device‐Quality GaN Templates

Physica Status Solidi (B) Basic Research, 2020-04, Vol.257 (4), p.n/a

2020

Volltextzugriff (PDF)

Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)

Journal of applied physics, 2023-11, Vol.134 (18)

2023

Volltextzugriff (PDF)

Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping

Physica status solidi. B, Basic research, 2017-08, Vol.254 (8), p.n/a

2017

Volltextzugriff (PDF)

Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect

Materials, 2024-07, Vol.17 (13), p.3343

2024

Volltextzugriff (PDF)

Thermal conductivity of AlxGa1-xN (0 <= x <= 1) epitaxial layers

Physical review materials, 2022, Vol.6 (10)

2022

Volltextzugriff (PDF)

Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors

Physical review. B, Condensed matter and materials physics, 2010-02, Vol.81 (8), p.085211, Article 085211

2010

Volltextzugriff (PDF)

Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

AIP advances, 2022-05, Vol.12 (5), p.055022-055022-7

2022

Volltextzugriff (PDF)

High rate growth of In2O3 at 1000 °C by halide vapor phase epitaxy

Japanese Journal of Applied Physics, 2016-10, Vol.55 (12)

2016

Volltextzugriff (PDF)

Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect

APL materials, 2024-02, Vol.12 (2), p.021114-021114-8

2024

Volltextzugriff (PDF)

Optical properties of functionalized GaN nanowires

Journal of applied physics, 2011-03, Vol.109 (5), p.053523-053523-6

2011

Volltextzugriff (PDF)

Luminescence of Acceptors in Mg-Doped GaN

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JJ03-08JJ03-2

2013

Volltextzugriff (PDF)

Internal structure of the neutral donor-bound exciton complex in cubic zinc-blende and wurtzite semiconductors

Physical review. B, Condensed matter and materials physics, 2007-02, Vol.75 (8), Article 085204

2007

Volltextzugriff (PDF)

Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants

Journal of applied physics, 2017-06, Vol.121 (23)

2017

Volltextzugriff (PDF)

Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies

Crystal growth & design, 2022-12, Vol.22 (12), p.7021-7030

2022

Volltextzugriff (PDF)

Thermal conductivity of Sc x Al1− x N and Y x Al1− x N alloys

Applied physics letters, 2023-05, Vol.122 (18)

2023

Volltextzugriff (PDF)

1 – 25 von 158

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(133)
Mit Volltextzugriff
(150)

Publikationsform

Sprache

Englisch
(158)

Erscheinungsjahr

n.n

Thema

Physical Sciences
(122)
Science & Technology
(121)
Physics
(116)
Technology
(83)
Physics, Applied
(78)
Physics, Condensed Matter
(65)
Natural Sciences
(63)
Naturvetenskap
(63)
Materials Science
(59)
Teknikvetenskap
(55)
Materials Science, Multidisciplinary
(48)
Exact Sciences And Technology
(36)
78.55.Cr
(28)
Condensed Matter Physics
(28)
Condensed Matter: Electronic Structure, Electrical, Magnetic, And Optical Properties
(26)
Photoluminescence
(25)
Fysik
(16)
Gan
(16)
Iii-V Semiconductors
(16)
Den Kondenserade Materiens Fysik
(15)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere

N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality

On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC

Thermal conductivity of ScxAl1−xN and YxAl1−xN alloys

Thermal conductivity of ultra-wide bandgap thin layers – High Al-content AlGaN and β-Ga2O3

Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect

Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition

High-quality N-polar GaN optimization by multi-step temperature growth process

On the thermal conductivity anisotropy in wurtzite GaN

Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties

Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device‐Quality GaN Templates

Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)

Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping

Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect

Thermal conductivity of AlxGa1-xN (0 <= x <= 1) epitaxial layers

Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors

Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

High rate growth of In2O3 at 1000 °C by halide vapor phase epitaxy

Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect

Optical properties of functionalized GaN nanowires

Luminescence of Acceptors in Mg-Doped GaN

Internal structure of the neutral donor-bound exciton complex in cubic zinc-blende and wurtzite semiconductors

Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants

Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies

Thermal conductivity of Sc x Al1− x N and Y x Al1− x N alloys

Suchergebnisse filtern