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Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n ––Ga2O3 drift layers grown by halide vapor phase epitaxy

Applied physics letters, 2016-03, Vol.108 (13), p.133503

2016

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Investigation of halide vapor phase epitaxy of In2O3 on sapphire (0 0 0 1) substrates

Journal of crystal growth, 2021-06, Vol.563, p.126111, Article 126111

2021

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Investigation of etching characteristics of HVPE-grown c-In2O3 layers by hydrogen-environment anisotropic thermal etching

Journal of crystal growth, 2021-12, Vol.575, p.126338, Article 126338

2021

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Ga2O3 Schottky barrier diodes with n−-Ga2O3 drift layers grown by HVPE

2015 73rd Annual Device Research Conference (DRC), 2015, p.29-30

2015

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Influence of high-temperature processing on the surface properties of bulk AlN substrates

Journal of crystal growth, 2016-07, Vol.446, p.33-38

2016

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High rate InN growth by two-step precursor generation hydride vapor phase epitaxy

Journal of crystal growth, 2015-07, Vol.422, p.15-19

2015

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High rate growth of In2O3 at 1000 °C by halide vapor phase epitaxy

Japanese Journal of Applied Physics, 2016-10, Vol.55 (12)

2016

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Thermal and chemical stabilities of group-III sesquioxides in a flow of either N2 or H2

Japanese Journal of Applied Physics, 2016-11, Vol.55 (12)

2016

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Formation mechanism of AlN whiskers on sapphire surfaces heat-treated in a mixed flow of H2 and N2

Japanese Journal of Applied Physics, , Vol.55 (5S)

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Influence of substrate polarity of (0 0 0 1) and (0 0 0 1 ¯ )GaN surfaces on hydride vapor-phase epitaxy of InN

Journal of crystal growth, 2010-02, Vol.312 (5), p.651-655

2010

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Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H2 and N2

Journal of crystal growth, 2012-07, Vol.350 (1), p.60-65

2012

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Theoretical Analysis for Surface Reconstruction of AlN and InN in the Presence of Hydrogen

Japanese Journal of Applied Physics, 2007-08, Vol.46 (8R), p.5112

2007

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Control of in-plane epitaxial relationship of c -plane AlN layers grown on a -plane sapphire substrates by hydride vapor phase epitaxy

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2028-2030

2011

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Improving the luminous efficiency of red nanocolumn μ-LEDs by reducing electrode size to ϕ2.2 μm

Applied physics express, 2024-01, Vol.17 (1), p.14004

2024

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Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy

Japanese Journal of Applied Physics, 2011-12, Vol.50 (12R), p.125503

2011

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Growth of semi-polar InN layer on GaAs (110) surface by MOVPE

Journal of crystal growth, 2011-03, Vol.318 (1), p.479-482

2011

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Ab initio calculation for the decomposition process of GaN (0 0 0 1) and (0 0 0 1¯) surfaces

Journal of crystal growth, 2008-04, Vol.310 (7), p.1632-1636

2008

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Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy

Journal of crystal growth, 2014-11, Vol.405, p.19-22

2014

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Thermodynamic analysis of β-Ga2O3 growth by molecular beam epitaxy

Japanese Journal of Applied Physics, 2023-01, Vol.62 (1), p.015501

2023

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Thermodynamic analysis of molecular beam epitaxy of group-III sesquioxides

Japanese Journal of Applied Physics, 2023-05, Vol.62 (5), p.055503

2023

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Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy

Japanese Journal of Applied Physics, 2011-12, Vol.50 (12), p.125503-125503-5

2011

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Thermodynamic analysis of β-Ga 2 O 3 growth by molecular beam epitaxy

Japanese Journal of Applied Physics, 2023-01, Vol.62 (1), p.15501

2023

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Growth of twin-free cubic In2O3(111) thick layers on c-plane sapphire substrates by halide vapor phase epitaxy

Japanese Journal of Applied Physics, 2021-12, Vol.60 (12)

2021

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InGaN/GaN superlattice underlayer for fabricating of red nanocolumn μ-LEDs with (10-11) plane InGaN/AlGaN MQWs

Nanotechnology, 2023-10, Vol.34 (43), p.435201

2023

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Carrier Gas Dependence at Initial Processes for $a$-Plane AlN Growth on $r$-Plane Sapphire Substrates by Hydride Vapor Phase Epitaxy

Japanese Journal of Applied Physics, 2011-05, Vol.50 (5), p.055501-055501-5

2011

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Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n ––Ga2O3 drift layers grown by halide vapor phase epitaxy

Investigation of halide vapor phase epitaxy of In2O3 on sapphire (0 0 0 1) substrates

Investigation of etching characteristics of HVPE-grown c-In2O3 layers by hydrogen-environment anisotropic thermal etching

Ga2O3 Schottky barrier diodes with n−-Ga2O3 drift layers grown by HVPE

Influence of high-temperature processing on the surface properties of bulk AlN substrates

High rate InN growth by two-step precursor generation hydride vapor phase epitaxy

High rate growth of In2O3 at 1000 °C by halide vapor phase epitaxy

Thermal and chemical stabilities of group-III sesquioxides in a flow of either N2 or H2

Formation mechanism of AlN whiskers on sapphire surfaces heat-treated in a mixed flow of H2 and N2

Influence of substrate polarity of (0 0 0 1) and (0 0 0 1 ¯ )GaN surfaces on hydride vapor-phase epitaxy of InN

Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H2 and N2

Theoretical Analysis for Surface Reconstruction of AlN and InN in the Presence of Hydrogen

Control of in-plane epitaxial relationship of c -plane AlN layers grown on a -plane sapphire substrates by hydride vapor phase epitaxy

Improving the luminous efficiency of red nanocolumn μ-LEDs by reducing electrode size to ϕ2.2 μm

Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy

Growth of semi-polar InN layer on GaAs (110) surface by MOVPE

Ab initio calculation for the decomposition process of GaN (0 0 0 1) and (0 0 0 1¯) surfaces

Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy

Thermodynamic analysis of β-Ga2O3 growth by molecular beam epitaxy

Thermodynamic analysis of molecular beam epitaxy of group-III sesquioxides

Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy

Thermodynamic analysis of β-Ga 2 O 3 growth by molecular beam epitaxy

Growth of twin-free cubic In2O3(111) thick layers on c-plane sapphire substrates by halide vapor phase epitaxy

InGaN/GaN superlattice underlayer for fabricating of red nanocolumn μ-LEDs with (10-11) plane InGaN/AlGaN MQWs

Carrier Gas Dependence at Initial Processes for $a$-Plane AlN Growth on $r$-Plane Sapphire Substrates by Hydride Vapor Phase Epitaxy

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