UB Paderborn / Katalog / Suche / in CDI

Properties of the main Mg-related acceptors in GaN from optical and structural studies

Journal of applied physics, 2014-02, Vol.115 (5), p.053507

2014

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Emergence of high quality sputtered III-nitride semiconductors and devices

Semiconductor science and technology, 2019-09, Vol.34 (9), p.93003

2019

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Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry

Scientific reports, 2020-02, Vol.10 (1), p.2223-2223, Article 2223

2020

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Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

Journal of applied physics, 2014-02, Vol.115 (7)

2014

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Reliable modeling of ultrathin alternative plasmonic materials using spectroscopic ellipsometry [Invited]

Optical materials express, 2019-02, Vol.9 (2), p.760

2019

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Transparent conducting oxides for electrode applications in light emitting and absorbing devices

Superlattices and microstructures, 2010-11, Vol.48 (5), p.458-484

2010

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Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (11¯01) GaN revealed from spatially resolved luminescence

Applied physics letters, 2013-11, Vol.103 (21)

2013

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Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy

Journal of applied physics, 2012-05, Vol.111 (10), p.103713-103713-9

2012

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Enhancement of Be and Mg incorporation in wurtzite quaternary BeMgZnO alloys with up to 5.1 eV optical bandgap

Journal of crystal growth, 2014-09, Vol.402, p.60-64

2014

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Donor behavior of Sb in ZnO

Journal of applied physics, 2012-08, Vol.112 (3)

2012

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Magnetic property investigations on Mn-doped ZnO Layers on sapphire

Applied physics letters, 2005-08, Vol.87 (6), p.062501-062501-3

2005

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Impurity complexes and conductivity of Ga-doped ZnO

Physical review. B, Condensed matter and materials physics, 2011-08, Vol.84 (7), Article 075201

2011

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Optical studies of strain and defect distribution in semipolar (11¯01) GaN on patterned Si substrates

Journal of applied physics, 2013-09, Vol.114 (11), p.113502

2013

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Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

Journal of applied physics, 2014-09, Vol.116 (9)

2014

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Epitaxial lateral overgrowth of non-polar GaN(1 1̄ 0 0) on Si(1 1 2) patterned substrates by MOCVD

Journal of crystal growth, 2011, Vol.314 (1), p.129-135

2011

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Preparation and properties of ZnO and devices

Physica Status Solidi (b), 2007-05, Vol.244 (5), p.1439-1450

2007

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Impurity distribution and microstructure of Ga-doped ZnO films grown by molecular beam epitaxy

Journal of applied physics, 2012-12, Vol.112 (12)

2012

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Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

Semiconductor science and technology, 2015-02, Vol.30 (2)

2015

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Hexagonal-based pyramid void defects in GaN and InGaN

Journal of applied physics, 2012-01, Vol.111 (2), p.023517-023517-6

2012

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Molecular beam epitaxy of high-quality ZnO using hydrogen peroxide as an oxidant

Journal of crystal growth, 2004-09, Vol.269 (2), p.356-361

2004

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Semiconductor solar cells: Recent progress in terrestrial applications

Superlattices and microstructures, 2011-04, Vol.49 (4), p.337-364

2011

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Highly conductive and optically transparent GZO films grown under metal-rich conditions by plasma assisted MBE

Physica status solidi. PSS-RRL. Rapid research letters, 2010-04, Vol.4 (3-4), p.70-72

2010

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InGaN based light emitting diodes utilizing Ga doped ZnO as a highly transparent contact to p-GaN

Physica status solidi. C, 2011-05, Vol.8 (5), p.1548-1551

2011

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Enhancement of Be and Mg incorporation in wurtzite quaternary BeMgZnO alloys with up to 5.1eV optical bandgap

Journal of crystal growth, 2014-09, Vol.402, p.60-64

2014

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About the Cu-related green luminescence band in ZnO

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2009-05, Vol.27 (3), p.1749-1754

2009

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Properties of the main Mg-related acceptors in GaN from optical and structural studies

Emergence of high quality sputtered III-nitride semiconductors and devices

Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry

Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

Reliable modeling of ultrathin alternative plasmonic materials using spectroscopic ellipsometry [Invited]

Transparent conducting oxides for electrode applications in light emitting and absorbing devices

Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (11¯01) GaN revealed from spatially resolved luminescence

Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy

Enhancement of Be and Mg incorporation in wurtzite quaternary BeMgZnO alloys with up to 5.1 eV optical bandgap

Donor behavior of Sb in ZnO

Magnetic property investigations on Mn-doped ZnO Layers on sapphire

Impurity complexes and conductivity of Ga-doped ZnO

Optical studies of strain and defect distribution in semipolar (11¯01) GaN on patterned Si substrates

Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

Epitaxial lateral overgrowth of non-polar GaN(1 1̄ 0 0) on Si(1 1 2) patterned substrates by MOCVD

Preparation and properties of ZnO and devices

Impurity distribution and microstructure of Ga-doped ZnO films grown by molecular beam epitaxy

Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

Hexagonal-based pyramid void defects in GaN and InGaN

Molecular beam epitaxy of high-quality ZnO using hydrogen peroxide as an oxidant

Semiconductor solar cells: Recent progress in terrestrial applications

Highly conductive and optically transparent GZO films grown under metal-rich conditions by plasma assisted MBE

InGaN based light emitting diodes utilizing Ga doped ZnO as a highly transparent contact to p-GaN

Enhancement of Be and Mg incorporation in wurtzite quaternary BeMgZnO alloys with up to 5.1eV optical bandgap

About the Cu-related green luminescence band in ZnO

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