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Emergence of high quality sputtered III-nitride semiconductors and devices

Semiconductor science and technology, 2019-09, Vol.34 (9), p.93003

2019

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Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry

Scientific reports, 2020-02, Vol.10 (1), p.2223-2223, Article 2223

2020

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Oxides, Oxides, and More Oxides: High-[kappa] Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics

Critical reviews in solid state and materials sciences, 2009-07, Vol.34 (3/4), p.89

2009

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Processing, Structure, Properties, and Applications of PZT Thin Films

Critical reviews in solid state and materials sciences, 2007-01, Vol.32 (3-4), p.111-202

2007

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Properties of the main Mg-related acceptors in GaN from optical and structural studies

Journal of applied physics, 2014-02, Vol.115 (5), p.053507

2014

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Reliable modeling of ultrathin alternative plasmonic materials using spectroscopic ellipsometry [Invited]

Optical materials express, 2019-02, Vol.9 (2), p.760

2019

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Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

Journal of applied physics, 2014-02, Vol.115 (7)

2014

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Transparent conducting oxides for electrode applications in light emitting and absorbing devices

Superlattices and microstructures, 2010-11, Vol.48 (5), p.458-484

2010

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Enhancement of Be and Mg incorporation in wurtzite quaternary BeMgZnO alloys with up to 5.1 eV optical bandgap

Journal of crystal growth, 2014-09, Vol.402, p.60-64

2014

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Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy

Journal of applied physics, 2012-05, Vol.111 (10), p.103713-103713-9

2012

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Magnetic property investigations on Mn-doped ZnO Layers on sapphire

Applied physics letters, 2005-08, Vol.87 (6), p.062501-062501-3

2005

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Donor behavior of Sb in ZnO

Journal of applied physics, 2012-08, Vol.112 (3)

2012

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Optical studies of strain and defect distribution in semipolar (11¯01) GaN on patterned Si substrates

Journal of applied physics, 2013-09, Vol.114 (11), p.113502

2013

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Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

Journal of applied physics, 2014-09, Vol.116 (9)

2014

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Epitaxial lateral overgrowth of non-polar GaN(1 1̄ 0 0) on Si(1 1 2) patterned substrates by MOCVD

Journal of crystal growth, 2011, Vol.314 (1), p.129-135

2011

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Preparation and properties of ZnO and devices

Physica Status Solidi (b), 2007-05, Vol.244 (5), p.1439-1450

2007

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Impurity distribution and microstructure of Ga-doped ZnO films grown by molecular beam epitaxy

Journal of applied physics, 2012-12, Vol.112 (12)

2012

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Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

Semiconductor science and technology, 2015-02, Vol.30 (2)

2015

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Hexagonal-based pyramid void defects in GaN and InGaN

Journal of applied physics, 2012-01, Vol.111 (2), p.023517-023517-6

2012

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Semiconductor solar cells: Recent progress in terrestrial applications

Superlattices and microstructures, 2011-04, Vol.49 (4), p.337-364

2011

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Molecular beam epitaxy of high-quality ZnO using hydrogen peroxide as an oxidant

Journal of crystal growth, 2004-09, Vol.269 (2), p.356-361

2004

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Highly conductive and optically transparent GZO films grown under metal-rich conditions by plasma assisted MBE

Physica status solidi. PSS-RRL. Rapid research letters, 2010-04, Vol.4 (3-4), p.70-72

2010

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Oxides, Oxides, and More Oxides: High-κ Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics

Critical reviews in solid state and materials sciences, 2009-11, Vol.34 (3-4), p.89-179

2009

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InGaN based light emitting diodes utilizing Ga doped ZnO as a highly transparent contact to p-GaN

Physica status solidi. C, 2011-05, Vol.8 (5), p.1548-1551

2011

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Growth of Pb(Ti,Zr)O3 thin films by metal-organic molecular beam epitaxy

Journal of crystal growth, 2009-02, Vol.311 (5), p.1333-1339

2009

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Emergence of high quality sputtered III-nitride semiconductors and devices

Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry

Oxides, Oxides, and More Oxides: High-[kappa] Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics

Processing, Structure, Properties, and Applications of PZT Thin Films

Properties of the main Mg-related acceptors in GaN from optical and structural studies

Reliable modeling of ultrathin alternative plasmonic materials using spectroscopic ellipsometry [Invited]

Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

Transparent conducting oxides for electrode applications in light emitting and absorbing devices

Enhancement of Be and Mg incorporation in wurtzite quaternary BeMgZnO alloys with up to 5.1 eV optical bandgap

Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy

Magnetic property investigations on Mn-doped ZnO Layers on sapphire

Donor behavior of Sb in ZnO

Optical studies of strain and defect distribution in semipolar (11¯01) GaN on patterned Si substrates

Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

Epitaxial lateral overgrowth of non-polar GaN(1 1̄ 0 0) on Si(1 1 2) patterned substrates by MOCVD

Preparation and properties of ZnO and devices

Impurity distribution and microstructure of Ga-doped ZnO films grown by molecular beam epitaxy

Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

Hexagonal-based pyramid void defects in GaN and InGaN

Semiconductor solar cells: Recent progress in terrestrial applications

Molecular beam epitaxy of high-quality ZnO using hydrogen peroxide as an oxidant

Highly conductive and optically transparent GZO films grown under metal-rich conditions by plasma assisted MBE

Oxides, Oxides, and More Oxides: High-κ Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics

InGaN based light emitting diodes utilizing Ga doped ZnO as a highly transparent contact to p-GaN

Growth of Pb(Ti,Zr)O3 thin films by metal-organic molecular beam epitaxy

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