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Emission properties of Ga2O3 nano-flakes: effect of excitation density

Scientific reports, 2017-02, Vol.7 (1), p.42132-42132, Article 42132

2017

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Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy

Journal of applied physics, 2014-12, Vol.116 (22), p.223503

2014

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Properties of the main Mg-related acceptors in GaN from optical and structural studies

Journal of applied physics, 2014-02, Vol.115 (5), p.053507

2014

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Evidence for two Mg related acceptors in GaN

Physical review letters, 2009-06, Vol.102 (23), p.235501-235501, Article 235501

2009

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Effect of silicon and oxygen doping on donor bound excitons in bulk GaN

Physical review. B, Condensed matter and materials physics, 2011-10, Vol.84 (16), p.165213, Article 165213

2011

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Deep levels in iron doped n- and p-type 4H-SiC

Journal of applied physics, 2011-12, Vol.110 (12), p.123701-123701-5

2011

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III-nitride tunable cup-cavities supporting quasi whispering gallery modes from ultraviolet to infrared

Scientific reports, 2015-12, Vol.5 (1), p.17970-17970, Article 17970

2015

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Surface potential effect on excitons in AlGaN/GaN quantum well structures

Applied physics letters, 2013-02, Vol.102 (8)

2013

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Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H-SiC

Journal of physics. D, Applied physics, 2012-11, Vol.45 (45), p.455301

2012

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III-nitride microcrystal cavities with quasi whispering gallery modes grown by molecular beam epitaxy

Physica Status Solidi. B: Basic Solid State Physics, 2016-05, Vol.253 (5), p.845-852

2016

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Biogenicity of an Early Quaternary iron formation, Milos Island, Greece

Geobiology, 2015-05, Vol.13 (3), p.225-244

2015

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Deep level defects in electron-irradiated 4H SiC epitaxial layers

Journal of applied physics, 1997-05, Vol.81 (9), p.6155-6159

1997

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Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

Journal of applied physics, 2004-07, Vol.96 (1), p.799-806

2004

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Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor

Journal of crystal growth, 2007-03, Vol.300 (1), p.32-36

2007

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Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates

Applied physics letters, 2007-11, Vol.91 (22), p.221901-221901-3

2007

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Bistable defects in low-energy electron irradiated n-type 4H-SiC

Physica status solidi. PSS-RRL. Rapid research letters, 2010-09, Vol.4 (8-9), p.227-229

2010

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Growth of thick GaN layers with hydride vapour phase epitaxy

Journal of crystal growth, 2005-07, Vol.281 (1), p.17-31

2005

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Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactor

Journal of crystal growth, 2008-03, Vol.310 (5), p.906-910

2008

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Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy

Applied physics letters, 2007-05, Vol.90 (22), p.221904-221904-3

2007

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Investigation of the structural and optical properties of free-standing GaN grown by HVPE

Journal of physics. D, Applied physics, 2005-07, Vol.38 (14), p.2332-2337

2005

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Radiation-induced defects in GaN

Physica scripta, 2010-11, Vol.2010, p.014015

2010

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Magnetic characterization of conductance electrons in GaN

Physica status solidi. B. Basic research, 2010-07, Vol.247 (7), p.1728-1731

2010

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Defects in low-energy electron-irradiated n-type 4H-SiC

Physica scripta, 2010-11, Vol.2010, p.014006

2010

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HVPE GaN substrates: growth and characterization

Physica status solidi. C, 2010-07, Vol.7 (7-8), p.1756-1759

2010

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Emission properties of Ga2O3 nano-flakes: effect of excitation density

Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy

Properties of the main Mg-related acceptors in GaN from optical and structural studies

Evidence for two Mg related acceptors in GaN

Effect of silicon and oxygen doping on donor bound excitons in bulk GaN

Deep levels in iron doped n- and p-type 4H-SiC

III-nitride tunable cup-cavities supporting quasi whispering gallery modes from ultraviolet to infrared

Surface potential effect on excitons in AlGaN/GaN quantum well structures

Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H-SiC

III-nitride microcrystal cavities with quasi whispering gallery modes grown by molecular beam epitaxy

Biogenicity of an Early Quaternary iron formation, Milos Island, Greece

Deep level defects in electron-irradiated 4H SiC epitaxial layers

Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor

Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates

Bistable defects in low-energy electron irradiated n-type 4H-SiC

Growth of thick GaN layers with hydride vapour phase epitaxy

Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactor

Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy

Investigation of the structural and optical properties of free-standing GaN grown by HVPE

Radiation-induced defects in GaN

Magnetic characterization of conductance electrons in GaN

Defects in low-energy electron-irradiated n-type 4H-SiC

HVPE GaN substrates: growth and characterization

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