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Evolution and prevention of meltback etching: Case study of semipolar GaN growth on patterned silicon substrates

Journal of applied physics, 2017-09, Vol.122 (10)

2017

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High quality GaN microplatelets grown by metal-organic vapor phase epitaxy on patterned silicon-on-insulator substrates: Toward micro light-emitting diodes

Journal of applied physics, 2023-06, Vol.133 (24)

2023

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Polarity in GaN and ZnO: Theory, measurement, growth, and devices

Applied physics reviews, 2016-12, Vol.3 (4)

2016

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Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate

Scientific reports, 2020-11, Vol.10 (1), p.18919-18919, Article 18919

2020

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Defect blocking via laterally induced growth of semipolar (1 0 1̅ 1) GaN on patterned substrates

Journal of physics. D, Applied physics, 2016-11, Vol.49 (47), p.475104

2016

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Solving the problem of gallium contamination problem in InAlN layers in close coupled showerhead reactors

Applied physics express, 2019-04, Vol.12 (4), p.45504

2019

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Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates

Journal of applied physics, 2014-03, Vol.115 (11)

2014

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Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO

Journal of applied physics, 2011-01, Vol.109 (2), p.023513-023513-8

2011

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Wide Band Gap Semiconductor Nanowires 2: Heterostructures and Optoelectronic Devices

1, 2014

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Wide band gap semiconductor nanowires

2014

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Controlled SOI nanopatterning for GaN pendeo-epitaxy

Micro and Nano Engineering, 2022-04, Vol.14, p.100110, Article 100110

2022

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Selective growth of tilted ZnO nanoneedles and nanowires by PLD on patterned sapphire substrates

AIP advances, 2016-09, Vol.6 (9), p.095013-095013-5

2016

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Electronic properties of E3 electron trap in n-type ZnO

Physica Status Solidi. B: Basic Solid State Physics, 2014-01, Vol.251 (1), p.206-210

2014

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H2 based etching of GaN for re-grown gallium-free InAlN barriers giving very low 2DEG sheet resistance of 185 Ω/sq

Journal of crystal growth, 2022-06, Vol.588, p.126674, Article 126674

2022

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Avoiding Gallium Pollution in Close‐Coupled Showerhead Reactors, Alternative Process Routes

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Strain relaxation in (0001) AlN/GaN heterostructures

Physical review. B, Condensed matter, 2001, Vol.63 (24), Article 245307

2001

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On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations

Journal of applied physics, 2022-10, Vol.132 (16)

2022

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Compared growth mechanisms of Zn-polar ZnO nanowires on O-polar ZnO and on sapphire

Nanotechnology, 2012-03, Vol.23 (12), p.125702-1-10

2012

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Growth of ( 10 1 ¯ 1 ) Semipolar GaN‐Based Light‐Emitting Diode Structures on Silicon‐on‐Insulator

physica status solidi (b), 2023-08, Vol.260 (8), p.n/a

2023

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Low temperature oxidation mechanisms of nanocrystalline magnetite thin film

Journal of applied physics, 2013-01, Vol.113 (1)

2013

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Unravelling the unwanted Ga incorporation effect on InGaN epilayers grown in CCS MOVPE reactors

Journal of crystal growth, 2020-04, Vol.536, p.125596, Article 125596

2020

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Role of deep and shallow donor levels on n -type conductivity of hydrothermal ZnO

Applied physics letters, 2012-01, Vol.100 (5), p.052115-052115-4

2012

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Structural analysis of cubic GaN through X-ray pole figure generation

Japanese Journal of Applied Physics, 1997-10, Vol.36 (10), p.6221-6225

1997

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Core-shell multi-quantum wells in ZnO/ZnMgO nanowires with high optical efficiency at room temperature

Nanotechnology, 2012-03, Vol.23 (8), p.085705-085705

2012

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Oxygen vacancy and E C − 1 eV electron trap in ZnO

Journal of physics. D, Applied physics, 2014-11, Vol.47 (46), p.465103

2014

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Evolution and prevention of meltback etching: Case study of semipolar GaN growth on patterned silicon substrates

High quality GaN microplatelets grown by metal-organic vapor phase epitaxy on patterned silicon-on-insulator substrates: Toward micro light-emitting diodes

Polarity in GaN and ZnO: Theory, measurement, growth, and devices

Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate

Defect blocking via laterally induced growth of semipolar (1 0 1̅ 1) GaN on patterned substrates

Solving the problem of gallium contamination problem in InAlN layers in close coupled showerhead reactors

Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates

Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO

Wide Band Gap Semiconductor Nanowires 2: Heterostructures and Optoelectronic Devices

Wide band gap semiconductor nanowires

Controlled SOI nanopatterning for GaN pendeo-epitaxy

Selective growth of tilted ZnO nanoneedles and nanowires by PLD on patterned sapphire substrates

Electronic properties of E3 electron trap in n-type ZnO

H2 based etching of GaN for re-grown gallium-free InAlN barriers giving very low 2DEG sheet resistance of 185 Ω/sq

Avoiding Gallium Pollution in Close‐Coupled Showerhead Reactors, Alternative Process Routes

Strain relaxation in (0001) AlN/GaN heterostructures

On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations

Compared growth mechanisms of Zn-polar ZnO nanowires on O-polar ZnO and on sapphire

Growth of ( 10 1 ¯ 1 ) Semipolar GaN‐Based Light‐Emitting Diode Structures on Silicon‐on‐Insulator

Low temperature oxidation mechanisms of nanocrystalline magnetite thin film

Unravelling the unwanted Ga incorporation effect on InGaN epilayers grown in CCS MOVPE reactors

Role of deep and shallow donor levels on n -type conductivity of hydrothermal ZnO

Structural analysis of cubic GaN through X-ray pole figure generation

Core-shell multi-quantum wells in ZnO/ZnMgO nanowires with high optical efficiency at room temperature

Oxygen vacancy and E C − 1 eV electron trap in ZnO

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