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Growth of InAs(Bi)/GaAs Quantum Dots under a Bismuth Surfactant at High and Low Temperature

Journal of nanomaterials, 2022, Vol.2022, p.1-9

2022

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Electronic Structural and Optical Properties of Multilayer Blue Phosphorus: A First-Principle Study

Journal of nanomaterials, 2019-01, Vol.2019, p.1-8

2019

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Phase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction

Applied physics letters, 2017-10, Vol.111 (16)

2017

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Effect of Photoillumination on Gold-Nanoparticle-Assisted Chemical Etching of Silicon

Journal of nanomaterials, 2018-01, Vol.2018, p.1-5

2018

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Anisotropic strain relaxation in epitaxially constrained α-(Al,Ga)2O3 thin films on a-plane Al2O3

Applied physics letters, 2023-09, Vol.123 (12)

2023

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Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

Applied physics letters, 2016-05, Vol.108 (20)

2016

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Thermal expansion of single-crystalline β-Ga2O3 from RT to 1200 K studied by synchrotron-based high resolution x-ray diffraction

Applied physics letters, 2018-10, Vol.113 (18)

2018

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Engineering grain boundaries at the 2D limit for the hydrogen evolution reaction

Nature communications, 2020-01, Vol.11 (1), p.57-12, Article 57

2020

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Counterintuitive strain distribution in axial (In,Ga)N/GaN nanowires

Applied physics letters, 2016-01, Vol.108 (3)

2016

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Observation of atomic ordering of triple-period-A and -B type in GaAsBi

Applied physics letters, 2014-07, Vol.105 (4)

2014

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Coaxial Multishell (In,Ga)As/GaAs Nanowires for Near-Infrared Emission on Si Substrates

Nano letters, 2014-05, Vol.14 (5), p.2604-2609

2014

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Supernormal hardness increase of dilute Ga(As, N) thin films

Journal of applied physics, 2017-03, Vol.121 (9)

2017

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Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi

Nanotechnology, 2014-05, Vol.25 (20), p.205605-205605

2014

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Bowing effect in elastic constants of dilute Ga(As,N) alloys

Applied physics letters, 2016-05, Vol.108 (18)

2016

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Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy

Journal of applied physics, 2023-01, Vol.133 (4)

2023

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SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes

Applied physics letters, 2022-03, Vol.120 (11)

2022

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Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity

Nano letters, 2012-12, Vol.12 (12), p.6119-6125

2012

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Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene

Nano letters, 2017-09, Vol.17 (9), p.5213-5221

2017

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Erratum to: Li2SnO3 branched nano- and microstructures with intense and broadband white-light emission

Nano research, 2019-02, Vol.12 (2), p.469-469

2019

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Scaling growth kinetics of self-induced GaN nanowires

Applied physics letters, 2012-04, Vol.100 (15), p.153101-153101-4

2012

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Electron Tomography of Pencil-Shaped GaN/(In,Ga)N Core-Shell Nanowires

Nanoscale research letters, 2019-07, Vol.14 (1), p.232-10, Article 232

2019

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Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature

Nano letters, 2016-02, Vol.16 (2), p.973-980

2016

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On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2008-08, Vol.310 (18), p.4035-4045

2008

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Synthesis of quasi-free-standing bilayer graphene nanoribbons on SiC surfaces

Nature communications, 2015-07, Vol.6 (1), p.7632-7632, Article 7632

2015

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Erratum: “Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil” [Appl. Phys. Lett. 108, 202101 (2016)]

Applied physics letters, 2017-11, Vol.111 (21)

2017

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Growth of InAs(Bi)/GaAs Quantum Dots under a Bismuth Surfactant at High and Low Temperature

Electronic Structural and Optical Properties of Multilayer Blue Phosphorus: A First-Principle Study

Phase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction

Effect of Photoillumination on Gold-Nanoparticle-Assisted Chemical Etching of Silicon

Anisotropic strain relaxation in epitaxially constrained α-(Al,Ga)2O3 thin films on a-plane Al2O3

Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

Thermal expansion of single-crystalline β-Ga2O3 from RT to 1200 K studied by synchrotron-based high resolution x-ray diffraction

Engineering grain boundaries at the 2D limit for the hydrogen evolution reaction

Counterintuitive strain distribution in axial (In,Ga)N/GaN nanowires

Observation of atomic ordering of triple-period-A and -B type in GaAsBi

Coaxial Multishell (In,Ga)As/GaAs Nanowires for Near-Infrared Emission on Si Substrates

Supernormal hardness increase of dilute Ga(As, N) thin films

Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi

Bowing effect in elastic constants of dilute Ga(As,N) alloys

Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy

SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes

Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity

Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene

Erratum to: Li2SnO3 branched nano- and microstructures with intense and broadband white-light emission

Scaling growth kinetics of self-induced GaN nanowires

Electron Tomography of Pencil-Shaped GaN/(In,Ga)N Core-Shell Nanowires

Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

Synthesis of quasi-free-standing bilayer graphene nanoribbons on SiC surfaces

Erratum: “Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil” [Appl. Phys. Lett. 108, 202101 (2016)]

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