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Grain to grain heterogeneity in PZT thin films as probed by in situ biasing XRD

Journal of applied physics, 2023-01, Vol.133 (4)

2023

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Catalyst preparation for CMOS-compatible silicon nanowire synthesis

Nature nanotechnology, 2009-10, Vol.4 (10), p.654-657

2009

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Structural Insights of Electrical Aging in PZT Thin Films as Revealed by In Situ Biasing X-ray Diffraction

Materials, 2021-08, Vol.14 (16), p.4500

2021

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Reaction of Ni film with In0.53Ga0.47As: Phase formation and texture

Journal of applied physics, 2016-10, Vol.120 (13)

2016

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Removal of poly(methyl methacrylate) in diblock copolymers films studied by grazing incidence small‐angle X‐ray scattering

Journal of polymer science. Part B, Polymer physics, 2016-06, Vol.54 (12), p.1137-1144

2016

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Development of Ni₂P Contact Technology and Its Integration on III-V Materials for 300 mm Si Photonics Platform

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.728-736

2022

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Use of Nanosecond Laser Annealing for Thermally Stable Ni(GeSn) Alloys

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO

Journal of applied physics, 2011-01, Vol.109 (2), p.023513-023513-8

2011

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Probing Self-Assembly of Cylindrical Morphology Block Copolymer Using in Situ and ex Situ Grazing Incidence Small-Angle X‑ray Scattering: The Attractive Case of Graphoepitaxy

Macromolecules, 2014-10, Vol.47 (20), p.7221-7229

2014

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Full local elastic strain tensor from Laue microdiffraction: simultaneous Laue pattern and spot energy measurement

Journal of applied crystallography, 2011-08, Vol.44 (4), p.688-696

2011

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3D chemical imaging based on a third-generation synchrotron source

TrAC, Trends in analytical chemistry (Regular ed.), 2010-06, Vol.29 (6), p.518-527

2010

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Lattice Relaxation and Dislocation Reduction in MBE CdTe(211)B/Ge(211)

Journal of electronic materials, 2010-07, Vol.39 (7), p.908-911

2010

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Ni-based metallization of GeSn layers: A review and recent advances

Microelectronic engineering, 2023-01, Vol.269, p.111919, Article 111919

2023

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Texture of NiGe(Sn) on Ge(100) and its evolution with Sn content

Journal of applied crystallography, 2021-10, Vol.54 (5), p.1306-1316

2021

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InGaAs-OI Substrate Fabrication on a 300 mm Wafer

Journal of low power electronics and applications, 2016-12, Vol.6 (4), p.19-19

2016

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Impact of Sn on the Ti/Ge solid-state reaction: Phase formation sequence, morphological and electrical properties

Microelectronic engineering, 2022-01, Vol.252, p.111667, Article 111667

2022

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Characterization of AlGaN/GaN degradations during plasma etching for power devices

Microelectronic engineering, 2021-09, Vol.249, p.111619, Article 111619

2021

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Impact of alloying elements (Co, Pt) on nickel stanogermanide formation

Materials science in semiconductor processing, 2020-03, Vol.108, p.104890, Article 104890

2020

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Impact and behavior of Sn during the Ni/GeSn solid‐state reaction

Journal of applied crystallography, 2020-06, Vol.53 (3), p.605-613

2020

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Shape and Roughness Extraction of Line Gratings by Small Angle X-Ray Scattering: Statistics and Simulations

IEEE transactions on semiconductor manufacturing, 2022-08, Vol.35 (3), p.425-431

2022

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Ni/GeSn solid‐state reaction monitored by combined X‐ray diffraction analyses: focus on the Ni‐rich phase

Journal of applied crystallography, 2018-08, Vol.51 (4), p.1133-1140

2018

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X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates

physica status solidi (b), 2020-04, Vol.257 (4), p.n/a

2020

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GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain

ACS photonics, 2019-10, Vol.6 (10), p.2462-2469

2019

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Plasma surface treatment of GeSn layers and its subsequent impact on Ni / GeSn solid-state reaction

Microelectronic engineering, 2022-03, Vol.257, p.111737, Article 111737

2022

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Ni(Pt)-based CMOS-compatible contacts on p-InGaAs for III–V photonic devices

Materials science in semiconductor processing, 2023-02, Vol.154, p.107199, Article 107199

2023

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Grain to grain heterogeneity in PZT thin films as probed by in situ biasing XRD

Catalyst preparation for CMOS-compatible silicon nanowire synthesis

Structural Insights of Electrical Aging in PZT Thin Films as Revealed by In Situ Biasing X-ray Diffraction

Reaction of Ni film with In0.53Ga0.47As: Phase formation and texture

Removal of poly(methyl methacrylate) in diblock copolymers films studied by grazing incidence small‐angle X‐ray scattering

Development of Ni₂P Contact Technology and Its Integration on III-V Materials for 300 mm Si Photonics Platform

Use of Nanosecond Laser Annealing for Thermally Stable Ni(GeSn) Alloys

Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO

Probing Self-Assembly of Cylindrical Morphology Block Copolymer Using in Situ and ex Situ Grazing Incidence Small-Angle X‑ray Scattering: The Attractive Case of Graphoepitaxy

Full local elastic strain tensor from Laue microdiffraction: simultaneous Laue pattern and spot energy measurement

3D chemical imaging based on a third-generation synchrotron source

Lattice Relaxation and Dislocation Reduction in MBE CdTe(211)B/Ge(211)

Ni-based metallization of GeSn layers: A review and recent advances

Texture of NiGe(Sn) on Ge(100) and its evolution with Sn content

InGaAs-OI Substrate Fabrication on a 300 mm Wafer

Impact of Sn on the Ti/Ge solid-state reaction: Phase formation sequence, morphological and electrical properties

Characterization of AlGaN/GaN degradations during plasma etching for power devices

Impact of alloying elements (Co, Pt) on nickel stanogermanide formation

Impact and behavior of Sn during the Ni/GeSn solid‐state reaction

Shape and Roughness Extraction of Line Gratings by Small Angle X-Ray Scattering: Statistics and Simulations

Ni/GeSn solid‐state reaction monitored by combined X‐ray diffraction analyses: focus on the Ni‐rich phase

X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates

GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain

Plasma surface treatment of GeSn layers and its subsequent impact on Ni / GeSn solid-state reaction

Ni(Pt)-based CMOS-compatible contacts on p-InGaAs for III–V photonic devices

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