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Silver Ink Formulations for Sinter-free Printing of Conductive Films

Scientific reports, 2016-02, Vol.6 (1), p.20814-20814, Article 20814

2016

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Review on Non-Volatile Memory with High -k Dielectrics: Flash for Generation Beyond 32 nm

Materials, 2014-07, Vol.7 (7), p.5117-5145

2014

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Oxides for Rectenna Technology

Materials, 2021-09, Vol.14 (18), p.5218

2021

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Monolithic integration design of GaN-based power chip including gate driver for high-temperature DC-DC converters

Japanese Journal of Applied Physics, 2019-05, Vol.58 (5), p.56505

2019

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The 2018 GaN power electronics roadmap

Journal of physics. D, Applied physics, 2018-04, Vol.51 (16), p.163001

2018

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Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing

Materials, 2015-07, Vol.8 (8), p.4829-4842

2015

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Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates

Materials, 2015-12, Vol.8 (12), p.8169-8182

2015

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Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

Materials, 2014-10, Vol.7 (10), p.6965-6981

2014

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Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga2O3

physica status solidi (b), 2024-05, Vol.261 (5), p.n/a

2024

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Influence of Polymorphism on the Electronic Structure of Ga2O3

Chemistry of materials, 2020-10, Vol.32 (19), p.8460-8470

2020

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Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al2O3 gate dielectric

Japanese Journal of Applied Physics, 2020-04, Vol.59 (4), p.1

2020

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Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

IEEE journal of selected topics in quantum electronics, 2011-07, Vol.17 (4), p.878-888

2011

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IEEE_Xplore

Ni/Au contacts to corundum α-Ga2O3

Japanese Journal of Applied Physics, 2023-06, Vol.62 (SF), p.SF1008

2023

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A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density

Journal of physics. D, Applied physics, 2018-02, Vol.51 (6), p.65102

2018

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Effect of HCl cleaning on InSb-Al2O3 MOS capacitors

Semiconductor science and technology, 2019-03, Vol.34 (3)

2019

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Effect of HCl cleaning on InSb–Al 2 O 3 MOS capacitors

Semiconductor science and technology, 2019-03, Vol.34 (3), p.35032

2019

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Unit-Cell-Level Assembly of Metastable Transition-Metal Oxides by Pulsed-Laser Deposition

Angewandte Chemie (International ed.), 2007-01, Vol.46 (24), p.4539-4542

2007

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Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.673-682

2017

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IEEE_Xplore

Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.1225-1230

2017

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IEEE_Xplore

Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2016-04, Vol.372, p.14-28

2016

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Ce(IV) Complexes with Donor-Functionalized Alkoxide Ligands: Improved Precursors for Chemical Vapor Deposition of CeO2

Inorganic chemistry, 2011-11, Vol.50 (22), p.11644-11652

2011

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Molecular design of improved precursors for the MOCVD of oxides used in microelectronics

Surface & coatings technology, 2007-09, Vol.201 (22), p.9046-9054

2007

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Some recent developments in the chemical vapour deposition of electroceramic oxides

Journal of physics. D, Applied physics, 2003-03, Vol.36 (6), p.R80-R95

2003

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Electrochemistry at boron-doped diamond films grown on graphite substrates: redox-, adsorption and deposition processes

Journal of electroanalytical chemistry (Lausanne, Switzerland), 1998-01, Vol.442 (1), p.207-216

1998

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Development of Quadrupole Mass Spectrometers Using Rapid Prototyping Technology

Journal of the American Society for Mass Spectrometry, 2009-07, Vol.20 (7), p.1359-1365

2009

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Silver Ink Formulations for Sinter-free Printing of Conductive Films

Review on Non-Volatile Memory with High -k Dielectrics: Flash for Generation Beyond 32 nm

Oxides for Rectenna Technology

Monolithic integration design of GaN-based power chip including gate driver for high-temperature DC-DC converters

The 2018 GaN power electronics roadmap

Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing

Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga2O3

Influence of Polymorphism on the Electronic Structure of Ga2O3

Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al2O3 gate dielectric

Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

Ni/Au contacts to corundum α-Ga2O3

A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density

Effect of HCl cleaning on InSb-Al2O3 MOS capacitors

Effect of HCl cleaning on InSb–Al 2 O 3 MOS capacitors

Unit-Cell-Level Assembly of Metastable Transition-Metal Oxides by Pulsed-Laser Deposition

Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements

Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications

Ce(IV) Complexes with Donor-Functionalized Alkoxide Ligands: Improved Precursors for Chemical Vapor Deposition of CeO2

Molecular design of improved precursors for the MOCVD of oxides used in microelectronics

Some recent developments in the chemical vapour deposition of electroceramic oxides

Electrochemistry at boron-doped diamond films grown on graphite substrates: redox-, adsorption and deposition processes

Development of Quadrupole Mass Spectrometers Using Rapid Prototyping Technology

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