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Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption

Applied physics letters, 2016-02, Vol.108 (7)

2016

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The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy

Applied physics letters, 2015-02, Vol.106 (8)

2015

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Comparison of the growth kinetics of In2O3 and Ga2O3 and their suboxide desorption during plasma-assisted molecular beam epitaxy

Applied physics letters, 2016-08, Vol.109 (6)

2016

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Phase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction

Applied physics letters, 2017-10, Vol.111 (16)

2017

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Offcut-related step-flow and growth rate enhancement during (100) β-Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)

Applied physics letters, 2020-11, Vol.117 (22)

2020

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Indium oxide-a transparent, wide-band gap semiconductor for (opto)electronic applications

Semiconductor science and technology, 2015-02, Vol.30 (2), p.24001

Bierwagen, Oliver

2015

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Ultrawide-bandgap semiconductors: An overview

Journal of materials research, 2021-12, Vol.36 (23), p.4601-4615

2021

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Metal-Exchange Catalysis in the Growth of Sesquioxides: Towards Heterostructures of Transparent Oxide Semiconductors

Physical review letters, 2017-11, Vol.119 (19), p.196001-196001, Article 196001

2017

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Acceptor and compensating donor doping of single crystalline SnO (001) films grown by molecular beam epitaxy and its perspectives for optoelectronics and gas-sensing

Applied physics letters, 2023-03, Vol.122 (12)

2023

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SnO/β-Ga2O3 vertical pn heterojunction diodes

Applied physics letters, 2020-12, Vol.117 (25)

2020

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β-Gallium oxide power electronics

APL materials, 2022-02, Vol.10 (2), p.029201-029201-40

2022

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Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources

APL materials, 2021-11, Vol.9 (11), p.111110-111110-10

2021

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Erratum: “Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources” [APL Mater. 9, 111110 (2021)]

APL materials, 2023-08, Vol.11 (8), p.089901-089901-1

2023

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Efficient suboxide sources in oxide molecular beam epitaxy using mixed metal + oxide charges: The examples of SnO and Ga2O

APL materials, 2020-03, Vol.8 (3), p.031110-031110-10

2020

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Epitaxial Sb-doped SnO2 and Sn-doped In2O3 transparent conducting oxide contacts on GaN-based light emitting diodes

Thin solid films, 2016-04, Vol.605, p.186-192

2016

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Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy

Journal of applied physics, 2023-01, Vol.133 (4)

2023

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Structural and electron transport properties of single-crystalline In2O3 films compensated by Ni acceptors

Applied physics letters, 2017-12, Vol.111 (26)

2017

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SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes

Applied physics letters, 2022-03, Vol.120 (11)

2022

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Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

Journal of applied physics, 2018-05, Vol.123 (19)

2018

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Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga)2O3 alloy films

Applied physics letters, 2021-07, Vol.119 (4)

2021

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Consequences of plasma oxidation and vacuum annealing on the chemical properties and electron accumulation of In2O3 surfaces

Journal of applied physics, 2016-12, Vol.120 (24)

2016

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Kinetics versus thermodynamics of the metal incorporation in molecular beam epitaxy of (In x Ga1−x )2O3

APL materials, 2016-08, Vol.4 (8), p.086112-086112-6

2016

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Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)

Journal of applied physics, 2020-01, Vol.127 (1)

2020

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Nucleation of islands and continuous high-quality In2O3(001) films during plasma-assisted molecular beam epitaxy on Y-stabilized ZrO2(001)

Journal of applied physics, 2010-06, Vol.107 (11)

2010

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Plasma-assisted molecular beam epitaxy of Sn-doped In2O3: Sn incorporation, structural changes, doping limits, and compensation

Physica status solidi. A, Applications and materials science, 2014-01, Vol.211 (1), p.48-53

2014

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Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption

The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy

Comparison of the growth kinetics of In2O3 and Ga2O3 and their suboxide desorption during plasma-assisted molecular beam epitaxy

Phase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction

Offcut-related step-flow and growth rate enhancement during (100) β-Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)

Indium oxide-a transparent, wide-band gap semiconductor for (opto)electronic applications

Ultrawide-bandgap semiconductors: An overview

Metal-Exchange Catalysis in the Growth of Sesquioxides: Towards Heterostructures of Transparent Oxide Semiconductors

Acceptor and compensating donor doping of single crystalline SnO (001) films grown by molecular beam epitaxy and its perspectives for optoelectronics and gas-sensing

SnO/β-Ga2O3 vertical pn heterojunction diodes

β-Gallium oxide power electronics

Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources

Erratum: “Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources” [APL Mater. 9, 111110 (2021)]

Efficient suboxide sources in oxide molecular beam epitaxy using mixed metal + oxide charges: The examples of SnO and Ga2O

Epitaxial Sb-doped SnO2 and Sn-doped In2O3 transparent conducting oxide contacts on GaN-based light emitting diodes

Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy

Structural and electron transport properties of single-crystalline In2O3 films compensated by Ni acceptors

SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes

Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga)2O3 alloy films

Consequences of plasma oxidation and vacuum annealing on the chemical properties and electron accumulation of In2O3 surfaces

Kinetics versus thermodynamics of the metal incorporation in molecular beam epitaxy of (In x Ga1−x )2O3

Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)

Nucleation of islands and continuous high-quality In2O3(001) films during plasma-assisted molecular beam epitaxy on Y-stabilized ZrO2(001)

Plasma-assisted molecular beam epitaxy of Sn-doped In2O3: Sn incorporation, structural changes, doping limits, and compensation

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