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Fascinated Journeys into Blue Light

International journal of modern physics. B, Condensed matter physics, statistical physics, applied physics, 2015-12, Vol.29 (32), p.1530014

Akasaki, I.

2015

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Properties of the main Mg-related acceptors in GaN from optical and structural studies

Journal of applied physics, 2014-02, Vol.115 (5), p.053507

2014

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Evidence for two Mg related acceptors in GaN

Physical review letters, 2009-06, Vol.102 (23), p.235501-235501, Article 235501

2009

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Quasi-ballistic thermal conduction in 6H–SiC

Materials today physics, 2021-09, Vol.20, p.100462, Article 100462

2021

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Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification

Journal of crystal growth, 2007, Vol.298, p.349-353

2007

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Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

Journal of applied physics, 2006-05, Vol.99 (9)

2006

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Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy

Applied physics letters, 2006-11, Vol.89 (22), p.221901-221901-2

2006

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Growths of AlInN Single Layers and Distributed Bragg Reflectors for VCSELs

MRS proceedings, 2015, Vol.1736 (1), p.101-106, Article mrsf14-1736-t13-08

2015

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Optical band gap in Ga1−xInxN (0<x<0.2) on GaN by photoreflection spectroscopy

Applied physics letters, 1998-10, Vol.73 (14), p.1994-1996

1998

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One-step lateral growth for reduction in defect density of a -plane GaN on r -sapphire substrate and its application in light emitters

Physica status solidi. A, Applications and materials science, 2007-06, Vol.204 (6), p.2005-2009

2007

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Pit formation in GaInN quantum wells

Applied physics letters, 1998-02, Vol.72 (6), p.710-712

1998

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Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE

Journal of crystal growth, 2007-03, Vol.300 (1), p.141-144

2007

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Shortest wavelength semiconductor laser diode

Electronics letters, 1996, Vol.32 (12), p.1105

1996

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Reduction in defect density over whole area of (1$ bar 1 $00) m -plane GaN using one-sidewall seeded epitaxial lateral overgrowth

Physica Status Solidi (b), 2007-06, Vol.244 (6), p.1848-1852

2007

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Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire

Applied physics letters, 2003-01, Vol.82 (3), p.349-351

2003

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Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure

Thin solid films, 2006-10, Vol.515 (2), p.768-770

2006

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Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (7), p.1632-1635

2006

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Microstructure of thick AlN grown on sapphire by high-temperature MOVPE

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (7), p.1626-1631

2006

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Nitride-based light-emitting solar cell

Physica status solidi. C, 2010-07, Vol.7 (7-8), p.1807-1809

2010

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Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates

Applied physics letters, 2007-11, Vol.91 (22), p.221901-221901-3

2007

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Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy

Journal of applied physics, 2003-08, Vol.94 (4), p.2449-2453

2003

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Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

Applied physics letters, 1992-11, Vol.61 (22), p.2688-2690

1992

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Piezoelectric Franz–Keldysh effect in strained GaInN/GaN heterostructures

Journal of applied physics, 1999-04, Vol.85 (7), p.3786-3791

1999

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High efficiency violet to blue light emission in porous SiC produced by anodic method

Physica status solidi. C, 2010-10, Vol.7 (10), p.2459-2462

2010

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Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells

Journal of applied physics, 2000-09, Vol.88 (5), p.2677-2681

2000

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Fascinated Journeys into Blue Light

Properties of the main Mg-related acceptors in GaN from optical and structural studies

Evidence for two Mg related acceptors in GaN

Quasi-ballistic thermal conduction in 6H–SiC

Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification

Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy

Growths of AlInN Single Layers and Distributed Bragg Reflectors for VCSELs

Optical band gap in Ga1−xInxN (0<x<0.2) on GaN by photoreflection spectroscopy

One-step lateral growth for reduction in defect density of a -plane GaN on r -sapphire substrate and its application in light emitters

Pit formation in GaInN quantum wells

Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE

Shortest wavelength semiconductor laser diode

Reduction in defect density over whole area of (1$ bar 1 $00) m -plane GaN using one-sidewall seeded epitaxial lateral overgrowth

Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire

Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure

Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates

Microstructure of thick AlN grown on sapphire by high-temperature MOVPE

Nitride-based light-emitting solar cell

Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates

Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy

Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

Piezoelectric Franz–Keldysh effect in strained GaInN/GaN heterostructures

High efficiency violet to blue light emission in porous SiC produced by anodic method

Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells

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