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Structural studies and mechanical properties of some borate glasses doped with different alkali and cobalt oxides

Current Applied Physics, 2013, 13(1), , pp.152-158

2013

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Nonlinear optical properties and optical power limiting effect of Giemsa dye

Optics and laser technology, 2016-08, Vol.82, p.150-156

2016

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Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

Applied physics letters, 2014-09, Vol.105 (9)

2014

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Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

Applied physics letters, 2016-08, Vol.109 (6)

2016

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Novel Potentiometric Sensor for the Selective Determination of Cefotaxime Sodium and Its Application to Pharmaceutical Analysis

IEEE sensors journal, 2020-04, Vol.20 (7), p.3415-3422

2020

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Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Journal of crystal growth, 2013-10, Vol.380, p.14-17

2013

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AC Small-Signal Model for Magnetoresistive Lateral Spin Valves

IEEE transactions on magnetics, 2019-03, Vol.55 (3), p.1-8

2019

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Scaling of the Nonlocal Spin and Baseline Resistances in Graphene Lateral Spin Valves

IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.5003-5010

2019

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Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures

Solid-state electronics, 2010-06, Vol.54 (6), p.613-615

2010

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Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors

Applied physics letters, 2011-01, Vol.98 (2)

2011

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Graphene-Based Quantum Capacitance Wireless Vapor Sensors

IEEE sensors journal, 2014-05, Vol.14 (5), p.1459-1466

2014

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Bimodal wireless sensing with dual-channel wide bandgap heterostructure varactors

Applied physics letters, 2014-03, Vol.104 (9)

2014

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Study of bifurcations and chaos in the Muthuswamy–Chua system

Chaos, solitons and fractals, 2016-06, Vol.87, p.146-152

2016

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Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

Solid-state electronics, 2010-11, Vol.54 (11), p.1470-1473

2010

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Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

Journal of applied physics, 2016-12, Vol.120 (23)

2016

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Highly sensitive micro-Hall devices based on Al0.12In0.88Sb∕InSb heterostructures

Journal of applied physics, 2005-07, Vol.98 (1)

2005

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Using Tensor Momentum Dependent Deuteron Potential to Extract the Asymptotic D/S Ratio

AIP conference proceedings, 2010, Vol.1281 (1)

2010

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Adsorption behavior of Co(II) and Ni(II) from aqueous solutions onto titanate nanotubes

Fullerenes, nanotubes, and carbon nanostructures, 2016-07, Vol.24 (7), p.455-466

2016

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HfO2-insulated gate N-polar GaN HEMTs with high breakdown voltage

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1630-1633

2011

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Modeling and Design of High-Frequency Structures Using Artificial Neural Networks and Space Mapping

Advances in Imaging and Electron Physics, 2012, Vol.174, p.223-260

2012

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N-polar n+ GaN cap development for low ohmic contact resistance to inverted HEMTs

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.894-897

2012

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Substrate-Integrated Antennas on Silicon

Advances in Imaging and Electron Physics, 2012, Vol.174, p.391-458

2012

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RF MEMS Devices for Communication Systems

Advances in Imaging and Electron Physics, 2012, Vol.174, p.349-390

2012

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High frequency capacitance-voltage technique for the extraction of interface trap density of the heterojunction capacitor: Terman's method revised

Applied physics letters, 2011-08, Vol.99 (5), p.053501-053501-3

2011

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Nanoscale FETs

Advances in Imaging and Electron Physics, 2012, Vol.174, p.261-347

2012

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Structural studies and mechanical properties of some borate glasses doped with different alkali and cobalt oxides

Nonlinear optical properties and optical power limiting effect of Giemsa dye

Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

Novel Potentiometric Sensor for the Selective Determination of Cefotaxime Sodium and Its Application to Pharmaceutical Analysis

Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

AC Small-Signal Model for Magnetoresistive Lateral Spin Valves

Scaling of the Nonlocal Spin and Baseline Resistances in Graphene Lateral Spin Valves

Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures

Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors

Graphene-Based Quantum Capacitance Wireless Vapor Sensors

Bimodal wireless sensing with dual-channel wide bandgap heterostructure varactors

Study of bifurcations and chaos in the Muthuswamy–Chua system

Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

Highly sensitive micro-Hall devices based on Al0.12In0.88Sb∕InSb heterostructures

Using Tensor Momentum Dependent Deuteron Potential to Extract the Asymptotic D/S Ratio

Adsorption behavior of Co(II) and Ni(II) from aqueous solutions onto titanate nanotubes

HfO2-insulated gate N-polar GaN HEMTs with high breakdown voltage

Modeling and Design of High-Frequency Structures Using Artificial Neural Networks and Space Mapping

N-polar n+ GaN cap development for low ohmic contact resistance to inverted HEMTs

Substrate-Integrated Antennas on Silicon

RF MEMS Devices for Communication Systems

High frequency capacitance-voltage technique for the extraction of interface trap density of the heterojunction capacitor: Terman's method revised

Nanoscale FETs

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