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Quelle est la place du déclenchement en France et dans le monde ?

Journal de gynécologie obstétrique et biologie de la reproduction, 1995, Vol.24, p.4-7

1995

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Prise en charge des femmes enceintes et des nouveau-nés dans les grossesses à haut risque

Journal de gynécologie obstétrique et biologie de la reproduction, 1998, Vol.27, p.21-36

1998

Volltextzugriff (PDF)

Ageing and improvement of LV underground extruded cables systems

22nd International Conference and Exhibition on Electricity Distribution (CIRED 2013), 2013, p.0581

2013

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Thermal behavior of connectors in joints

22nd International Conference and Exhibition on Electricity Distribution (CIRED 2013), 2013, p.1377

2013

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Thermal behaviour of cables installed via directional drilling

22nd International Conference and Exhibition on Electricity Distribution (CIRED 2013), 2013, p.1411

2013

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Conductivity and quality of semi-conductive materials in MV cable accessories

22nd International Conference and Exhibition on Electricity Distribution (CIRED 2013), 2013, p.1341

2013

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Influence of the surroundings and mainly of the soil on MV cable systems

22nd International Conference and Exhibition on Electricity Distribution (CIRED 2013), 2013, p.0651

2013

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Measurement of the force induced by thermal expansion of conductor of mv cables and impact on MV joints

22nd International Conference and Exhibition on Electricity Distribution (CIRED 2013), 2013, p.0128

2013

Volltextzugriff (PDF)

Prise en charge des femmes enceintes et des nouveau-nés dans les grossesses à bas risque : Bilan de la littérature

Journal de gynécologie obstétrique et biologie de la reproduction, 1998, Vol.27, p.8-20

1998

Volltextzugriff (PDF)

Plasmonic-polarization enhancement of novel GaN/AlN quantum cascade detector

CLEO: 2013, 2013, p.1-2

2013

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Passive and hybrid mode-locking from a monolithic InGaN/GaN laser diode

CLEO: 2013, 2013, p.1-2

2013

Volltextzugriff (PDF)

High p-type GaN for advanced optoelectronic devices

2016 IEEE Photonics Conference (IPC), 2016, p.661-662

2016

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Growth and Characterization of Bulk GaN Crystals at High Pressure and High Temperature

MRS proceedings, 2003, Vol.798, Article Y2.3

2003

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Band-GaP Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy

MRS proceedings, 2003, Vol.798, Article Y12.1

2003

Volltextzugriff (PDF)

Real-time optical monitoring of gas phase dynamics for the growth of InN at elevated pressures

MRS proceedings, 2003, Vol.798, Article Y10.45

2003

Volltextzugriff (PDF)

III-Nitride Photonic Crystals for Blue and UV Emitters

MRS proceedings, 2003, Vol.798, Article Y4.6

2003

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Platelet Inversion Domains Induced by Mg-doping in ELOG AlGaN Films

MRS proceedings, 2003, Vol.798, Article Y5.21

2003

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GaN layers re-grown on etched GaN templates by plasma assisted molecular beam epitaxy

MRS proceedings, 2003, Vol.798, Article Y10.64

2003

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Strain evolution and phonons in AlN/GaN superlattices

MRS proceedings, 2003, Vol.798, Article Y5.60

2003

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Optical and Electrical Properties of Low to Highly-Degenerate InN Films

MRS proceedings, 2003, Vol.798, Article Y12.7

2003

Volltextzugriff (PDF)

Optical Study of Localized and Delocalized States in GaAsN/GaAs

MRS proceedings, 2003, Vol.798, Article Y5.68

2003

Volltextzugriff (PDF)

Electrical and Optical Characteristics of Delta Doped AlGaN Cladding Layer Materials for Highly Efficient 340nm Ultra Violet LEDs

MRS proceedings, 2003, Vol.798, Article Y3.10

2003

Volltextzugriff (PDF)

MBE Grown AlN Films on SiC for Piezoelectric MEMS Sensors

MRS proceedings, 2003, Vol.798, Article Y10.61

2003

Volltextzugriff (PDF)

Surface Control of ZrB2 (0001) Substrate for Molecular-Beam Epitaxy of GaN

MRS proceedings, 2003, Vol.798

2003

Volltextzugriff (PDF)

High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AlN interlayers

MRS proceedings, 2003, Vol.798, Article Y10.22

2003

Volltextzugriff (PDF)

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Quelle est la place du déclenchement en France et dans le monde ?

Prise en charge des femmes enceintes et des nouveau-nés dans les grossesses à haut risque

Ageing and improvement of LV underground extruded cables systems

Thermal behavior of connectors in joints

Thermal behaviour of cables installed via directional drilling

Conductivity and quality of semi-conductive materials in MV cable accessories

Influence of the surroundings and mainly of the soil on MV cable systems

Measurement of the force induced by thermal expansion of conductor of mv cables and impact on MV joints

Prise en charge des femmes enceintes et des nouveau-nés dans les grossesses à bas risque : Bilan de la littérature

Plasmonic-polarization enhancement of novel GaN/AlN quantum cascade detector

Passive and hybrid mode-locking from a monolithic InGaN/GaN laser diode

High p-type GaN for advanced optoelectronic devices

Growth and Characterization of Bulk GaN Crystals at High Pressure and High Temperature

Band-GaP Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy

Real-time optical monitoring of gas phase dynamics for the growth of InN at elevated pressures

III-Nitride Photonic Crystals for Blue and UV Emitters

Platelet Inversion Domains Induced by Mg-doping in ELOG AlGaN Films

GaN layers re-grown on etched GaN templates by plasma assisted molecular beam epitaxy

Strain evolution and phonons in AlN/GaN superlattices

Optical and Electrical Properties of Low to Highly-Degenerate InN Films

Optical Study of Localized and Delocalized States in GaAsN/GaAs

Electrical and Optical Characteristics of Delta Doped AlGaN Cladding Layer Materials for Highly Efficient 340nm Ultra Violet LEDs

MBE Grown AlN Films on SiC for Piezoelectric MEMS Sensors

Surface Control of ZrB2 (0001) Substrate for Molecular-Beam Epitaxy of GaN

High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AlN interlayers

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