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Implementation of Boolean Logic Functions in Charge Trap Flash for In-Memory Computing
IEEE electron device letters, 2019-09, Vol.40 (9), p.1358-1361
2019
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A Behavioral Compact Model for Static Characteristics of 3D NAND Flash Memory
IEEE electron device letters, 2019-04, Vol.40 (4), p.558-561
2019
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Highly Stackable 3D Capacitor-less DRAM for a High-performance Hybrid Memory
IEEE electron device letters, 2022-12, Vol.43 (12), p.1-1
2022
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Experimental Demonstration of NAND-Like Spin-Torque Memory Unit
IEEE electron device letters, 2021-04, Vol.42 (4), p.513-516
2021
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Dual-Mechanism Memory Combining Charge Trapping and Polarization Switching for Wide Memory Window Flash Cell
IEEE electron device letters, 2023-07, Vol.44 (7), p.1108-1111
2023
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Proton-Doped Strongly Correlated Perovskite Nickelate Memory Devices
IEEE electron device letters, 2018-10, Vol.39 (10), p.1500-1503
2018
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Pulse Dependent Threshold Voltage Variation of the Ovonic Threshold Switch in Cross-Point Memory
IEEE electron device letters, 2020-03, Vol.41 (3), p.373-376
2020
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Depolarization Field in Ferroelectric Nonvolatile Memory Considering Minor Loop Operation
IEEE electron device letters, 2019-09, Vol.40 (9), p.1415-1418
2019
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A 2-Transistor-2-Capacitor Ferroelectric Edge Compute-in-Memory Scheme With Disturb-Free Inference and High Endurance
IEEE electron device letters, 2023-07, Vol.44 (7), p.1088-1091
2023
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In-Memory Search With Phase Change Device-Based Ternary Content Addressable Memory
IEEE electron device letters, 2022-07, Vol.43 (7), p.1053-1056
2022
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Capacitive Memory Window With Non-Destructive Read in Ferroelectric Capacitors
IEEE electron device letters, 2023-07, Vol.44 (7), p.1092-1095
2023
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Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell
IEEE electron device letters, 2020-02, Vol.41 (2), p.240-243
2020
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Forming-Free, Self-Compliance WTe2-Based Conductive Bridge RAM With Highly Uniform Multilevel Switching for High-Density Memory
IEEE electron device letters, 2023-02, Vol.44 (2), p.253-256
2023
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Variability Analysis for Ferroelectric FET Nonvolatile Memories Considering Random Ferroelectric-Dielectric Phase Distribution
IEEE electron device letters, 2020-03, Vol.41 (3), p.369-372
2020
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Nonvolatile Ferroelectric LiNbO3 Domain Wall Crossbar Memory
IEEE electron device letters, 2023-03, Vol.44 (3), p.420-423
2023
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In-Memory Nearest Neighbor Search With Nanoelectromechanical Ternary Content-Addressable Memory
IEEE electron device letters, 2022-01, Vol.43 (1), p.154-157
2022
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Write Disturb in Ferroelectric FETs and Its Implication for 1T-FeFET AND Memory Arrays
IEEE electron device letters, 2018-11, Vol.39 (11), p.1656-1659
2018
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Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM
IEEE electron device letters, 2013-07, Vol.34 (7), p.861-863
2013
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HfO2-Based Highly Stable Radiation-Immune Ferroelectric Memory
IEEE electron device letters, 2017-03, Vol.38 (3), p.330-333
2017
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Analysis of Temperature in Phase Change Memory Scaling
IEEE electron device letters, 2007-08, Vol.28 (8), p.697-699
2007
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Energy-Efficient Ferroelectric-FET-Based Agent With Memory Trace for Enhanced Reinforcement Learning
IEEE electron device letters, 2024-02, Vol.45 (2), p.264-267
2024
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Quasi-Nondestructive Read Out of Ferroelectric Capacitor Polarization by Exploiting a 2TnC Cell to Relax the Endurance Requirement
IEEE electron device letters, 2023-09, Vol.44 (9), p.1436-1439
2023
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Endurance Improvement of GaN Bipolar Charge Trapping Memory With Back Gate Injection
IEEE electron device letters, 2023-09, Vol.44 (9), p.1408-1411
2023
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Sb-Se-based phase-change memory device with lower power and higher speed operations
IEEE electron device letters, 2006-06, Vol.27 (6), p.445-447
2006
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A Nonvolatile Ternary-Content-Addressable- Memory Comprising Resistive-Gate Field-Effect Transistors
IEEE electron device letters, 2023-08, Vol.44 (8), p.1292-1295
2023
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