UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (8), p.n/a

2020

Volltextzugriff (PDF)

Electric field-induced crystallization of ferroelectric hafnium zirconium oxide

Scientific reports, 2021-11, Vol.11 (1), p.22266-22266, Article 22266

2021

Volltextzugriff (PDF)

Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs

IEEE transactions on electron devices, 2020-08, Vol.67 (8), p.3466-3471

2020

Volltextzugriff (PDF)

1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.29-34

2022

Volltextzugriff (PDF)

An experimental comparison of interface trap density in hafnium oxide-based FeFETs

Memories - Materials, Devices, Circuits and Systems, 2023-12, Vol.6, p.100091, Article 100091

2023

Volltextzugriff (PDF)

Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction

Nanomaterials (Basel, Switzerland), 2020-02, Vol.10 (2), p.384

2020

Volltextzugriff (PDF)

Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD

Crystals (Basel), 2022-08, Vol.12 (8), p.1115

2022

Volltextzugriff (PDF)

Effect of Al2O3 interlayers on the microstructure and electrical response of ferroelectric doped HfO2 thin films

Frontiers in nanotechnology, 2022-08, Vol.4

2022

Volltextzugriff (PDF)

Towards wake-up free ferroelectrics and scaling: Al-doped HZO and its crystallographic texture

Memories - Materials, Devices, Circuits and Systems, 2024-08, Vol.8, p.100110, Article 100110

2024

Volltextzugriff (PDF)

Improvement of low-frequency noise behavior with chloridic precursor materials at ALD process

Memories - Materials, Devices, Circuits and Systems, 2024-04, Vol.7, p.100095, Article 100095

2024

Volltextzugriff (PDF)

Ferroelectric [HfO 2 /ZrO 2 ] Superlattices with Enhanced Polarization, Tailored Coercive Field, and Improved High Temperature Reliability

Advanced Physics Research, 2023-09, Vol.2 (9), p.n/a

2023

Volltextzugriff (PDF)

Reliability Study of 1T1C FeRAM Arrays With Hf0.5Zr0.5O₂ Thickness Scaling

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.778-783

2022

Volltextzugriff (PDF)

Investigation of Recovery Phenomena in Hf0.5Zr0.5O2-Based 1T1C FeRAM

IEEE journal of the Electron Devices Society, 2023, Vol.11, p.43-46

2023

Volltextzugriff (PDF)

Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility

Advanced intelligent systems, 2024-04, Vol.6 (4), p.n/a

2024

Volltextzugriff (PDF)

28 nm high-k-metal gate ferroelectric field effect transistors based synapses — A comprehensive overview

Memories - Materials, Devices, Circuits and Systems, 2023-07, Vol.4, p.100048, Article 100048

2023

Volltextzugriff (PDF)

Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET

Memories - Materials, Devices, Circuits and Systems, 2023-07, Vol.4, p.100050, Article 100050

2023

Volltextzugriff (PDF)

Demonstration of Differential Mode Ferroelectric Field‐Effect Transistor Array‐Based in‐Memory Computing Macro for Realizing Multiprecision Mixed‐Signal Artificial Intelligence Accelerator

Advanced intelligent systems, 2023-06, Vol.5 (6), p.n/a

2023

Volltextzugriff (PDF)

Impact of the Ferroelectric Stack Lamination in Si Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFETs: Toward High-Density Multi-Level Cell and Synaptic Storage

Electronic materials (Basel), 2021-09, Vol.2 (3), p.344-369

2021

Volltextzugriff (PDF)

Toward Energy‐Efficient Ferroelectric Field‐Effect Transistors and Ferroelectric Random Access Memories: Tailoring the Coercive Field of Ferroelectric HfO2 Films

Physica status solidi. A, Applications and materials science, 2024-03, Vol.221 (6), p.n/a

2024

Volltextzugriff (PDF)

Toward Energy‐Efficient Ferroelectric Field‐Effect Transistors and Ferroelectric Random Access Memories: Tailoring the Coercive Field of Ferroelectric HfO 2 Films

Physica status solidi. A, Applications and materials science, 2024-03, Vol.221 (6)

2024

Volltextzugriff (PDF)

Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices

Advanced functional materials, 2022-07, Vol.32 (27), p.n/a

2022

Volltextzugriff (PDF)

On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide

Physica status solidi. PSS-RRL. Rapid research letters, 2021-05, Vol.15 (5), p.n/a

2021

Volltextzugriff (PDF)

Ferroelectric FETs with Separated Capacitor in the Back-End-of-Line: Role of the Capacitance Ratio

IEEE electron device letters, 2022-11, Vol.43 (11), p.1-1

2022

Volltextzugriff (PDF)

28 nm HKMG-Based Current Limited FeFET Crossbar-Array for Inference Application

IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.1-5

2022

Volltextzugriff (PDF)

SPICE compatible semi-empirical compact model for ferroelectric hysteresis

Solid-state electronics, 2023-01, Vol.199, p.108501, Article 108501

2023

Volltextzugriff (PDF)

1 – 25 von 199

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(129)
Mit Volltextzugriff
(168)

Publikationsform

Sprache

Englisch
(187)
Deutsch
(11)
Japanisch
(6)

Erscheinungsjahr

n.n

Thema

Science & Technology
(104)
Technology
(78)
Hafnium Oxide
(55)
Engineering
(51)
Engineering, Electrical & Electronic
(49)
Physical Sciences
(46)
Ferroelectricity
(43)
Ferroelectric Materials
(38)
Physics
(34)
Physics, Applied
(30)
Materials Science
(29)
Materials Science, Multidisciplinary
(29)
Ferroelectric
(26)
Fefet
(24)
Nonvolatile Memory
(24)
Semiconductor Devices
(24)
Field Effect Transistors
(22)
Random Access Memory
(20)
Capacitors
(19)
Chemistry
(19)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(7)

Menü

Weitere Dienste

Einstellungen

Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation

Electric field-induced crystallization of ferroelectric hafnium zirconium oxide

Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs

1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline

An experimental comparison of interface trap density in hafnium oxide-based FeFETs

Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction

Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD

Effect of Al2O3 interlayers on the microstructure and electrical response of ferroelectric doped HfO2 thin films

Towards wake-up free ferroelectrics and scaling: Al-doped HZO and its crystallographic texture

Improvement of low-frequency noise behavior with chloridic precursor materials at ALD process

Ferroelectric [HfO 2 /ZrO 2 ] Superlattices with Enhanced Polarization, Tailored Coercive Field, and Improved High Temperature Reliability

Reliability Study of 1T1C FeRAM Arrays With Hf0.5Zr0.5O₂ Thickness Scaling

Investigation of Recovery Phenomena in Hf0.5Zr0.5O2-Based 1T1C FeRAM

Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility

28 nm high-k-metal gate ferroelectric field effect transistors based synapses — A comprehensive overview

Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET

Demonstration of Differential Mode Ferroelectric Field‐Effect Transistor Array‐Based in‐Memory Computing Macro for Realizing Multiprecision Mixed‐Signal Artificial Intelligence Accelerator

Impact of the Ferroelectric Stack Lamination in Si Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFETs: Toward High-Density Multi-Level Cell and Synaptic Storage

Toward Energy‐Efficient Ferroelectric Field‐Effect Transistors and Ferroelectric Random Access Memories: Tailoring the Coercive Field of Ferroelectric HfO2 Films

Toward Energy‐Efficient Ferroelectric Field‐Effect Transistors and Ferroelectric Random Access Memories: Tailoring the Coercive Field of Ferroelectric HfO 2 Films

Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices

On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide

Ferroelectric FETs with Separated Capacitor in the Back-End-of-Line: Role of the Capacitance Ratio

28 nm HKMG-Based Current Limited FeFET Crossbar-Array for Inference Application

SPICE compatible semi-empirical compact model for ferroelectric hysteresis

Suchergebnisse filtern