UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 134

Sortiert nach

Enhanced ferroelectricity in ultrathin films grown directly on silicon

Nature (London), 2020-04, Vol.580 (7804), p.478-482

2020

Link zum Volltext

Verfügbarkeit prüfen

Binary ferroelectric oxides for future computing paradigms

MRS bulletin, 2021-11, Vol.46 (11), p.1071-1079

2021

Link zum Volltext

Verfügbarkeit prüfen

Steep Switching Characteristics of L-Shaped Tunnel FET With Doping Engineering

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.359-364

2021

Link zum Volltext

Verfügbarkeit prüfen

Effects of temperature and DC cycling stress on resistive switching mechanisms in hafnia-based ferroelectric tunnel junction

Applied physics letters, 2023-04, Vol.122 (15)

2023

Link zum Volltext

Verfügbarkeit prüfen

Low-Power Vertical Tunnel Field-Effect Transistor Ternary Inverter

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.286-294

2021

Link zum Volltext

Verfügbarkeit prüfen

Low-frequency noise characteristics of indium–gallium–zinc oxide ferroelectric thin-film transistors with metal–ferroelectric–metal–insulator–semiconductor structure

Applied physics letters, 2023-04, Vol.122 (15)

2023

Link zum Volltext

Verfügbarkeit prüfen

Impact of interlayer insulator formation methods on HfOx ferroelectricity in the metal–ferroelectric–insulator–semiconductor stack

Applied physics letters, 2022-01, Vol.120 (1)

2022

Link zum Volltext

Verfügbarkeit prüfen

Analysis on Tunnel Field-Effect Transistor with Asymmetric Spacer

Applied sciences, 2020-05, Vol.10 (9), p.3054

2020

Link zum Volltext

Verfügbarkeit prüfen

Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer

Applied physics letters, 2024-01, Vol.124 (3)

2024

Link zum Volltext

Verfügbarkeit prüfen

Variability analysis of ferroelectric FETs in program operation using low-frequency noise spectroscopy

Applied physics letters, 2022-10, Vol.121 (16)

2022

Link zum Volltext

Verfügbarkeit prüfen

A Nitrided Interfacial Oxide for Interface State Improvement in Hafnium Zirconium Oxide-Based Ferroelectric Transistor Technology

IEEE electron device letters, 2018-01, Vol.39 (1), p.95-98

2018

Link zum Volltext
Volltext

Schottky Contact-induced Hump Phenomenon by Bias and Optical Stresses in Amorphous Oxide Thin Film Transistor

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2022, 22(1), 103, pp.24-29

2022

Link zum Volltext

Verfügbarkeit prüfen

Self‐Curable Synaptic Ferroelectric FET Arrays for Neuromorphic Convolutional Neural Network

Advanced science, 2023-05, Vol.10 (15), p.e2207661-n/a

2023

Link zum Volltext

Verfügbarkeit prüfen

1/f Noise in Synaptic Ferroelectric Tunnel Junction: Impact on Convolutional Neural Network

Advanced intelligent systems, 2023-06, Vol.5 (6), p.n/a

2023

Link zum Volltext

Verfügbarkeit prüfen

Floating Fin Shaped Stacked Nanosheet MOSFET for Low Power Logic Application

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

Link zum Volltext

Verfügbarkeit prüfen

Drift-Free pH Detection With Silicon Nanowire Field-Effect Transistors

IEEE electron device letters, 2016-05, Vol.37 (5), p.652-655

2016

Link zum Volltext
Volltext

Ferroelectric-Metal Field-Effect Transistor With Recessed Channel for 1T-DRAM Application

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.13-18

2022

Link zum Volltext

Verfügbarkeit prüfen

Negative Capacitance, n-Channel, Si FinFETs: Bi-directional Sub-60 mV/dec, Negative DIBL, Negative Differential Resistance and Improved Short Channel Effect

2018 IEEE Symposium on VLSI Technology, 2018, p.53-54

2018

Link zum Volltext
Volltext

Analog Synaptic Devices Based on IGZO Thin‐Film Transistors with a Metal–Ferroelectric–Metal–Insulator–Semiconductor Structure for High‐Performance Neuromorphic Systems

Advanced intelligent systems, 2023-12, Vol.5 (12), p.n/a

2023

Link zum Volltext

Verfügbarkeit prüfen

Proposition of Adaptive Read Bias: A Solution to Overcome Power and Scaling Limitations in Ferroelectric‐Based Neuromorphic System

Advanced science, 2024-02, Vol.11 (5), p.e2303735-n/a

2024

Link zum Volltext

Verfügbarkeit prüfen

Investigation on Tunneling-based Ternary CMOS with Ferroelectric-Gate Field Effect Transistor Using TCAD Simulation

Applied sciences, 2020-07, Vol.10 (14), p.4977

2020

Link zum Volltext

Verfügbarkeit prüfen

Impact of Pt grain size on ferroelectric properties of zirconium hafnium oxide by chemical solution deposition

Nano convergence, 2022-10, Vol.9 (1), p.45-45, Article 45

2022

Link zum Volltext

Verfügbarkeit prüfen

Gate-Normal Negative Capacitance Tunnel Field-Effect Transistor (TFET) With Channel Doping Engineering

IEEE transactions on nanotechnology, 2021, Vol.20, p.278-281

2021

Link zum Volltext
Volltext

Ferroelectric-gate tunnel field-effect transistor one-transistor ternary contents addressable memory

Semiconductor science and technology, 2023-05, Vol.38 (5), p.55013

2023

Link zum Volltext

Verfügbarkeit prüfen

Demonstration of Ferroelectric-Gate Field-Effect Transistors with Recessed Channels

IEEE electron device letters, 2024-02, Vol.45 (2), p.1-1

2024

Link zum Volltext
Volltext

1 – 25 von 134

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(121)
Mit Volltextzugriff
(127)

Publikationsform

Artikel
(122)
Tagungsberichte
(12)

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(91)
Technology
(77)
Engineering
(60)
Engineering, Electrical & Electronic
(58)
Physical Sciences
(48)
Ferroelectricity
(46)
Ferroelectric Materials
(45)
Physics
(44)
Logic Gates
(40)
Physics, Applied
(39)
Semiconductor Devices
(36)
Field Effect Transistors
(31)
Materials Science
(22)
Transistors
(22)
Iron
(20)
Materials Science, Multidisciplinary
(19)
Silicon
(19)
Hafnium Oxide
(18)
Ferroelectric Tunnel Junction
(17)
Capacitance
(16)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Enhanced ferroelectricity in ultrathin films grown directly on silicon

Binary ferroelectric oxides for future computing paradigms

Steep Switching Characteristics of L-Shaped Tunnel FET With Doping Engineering

Effects of temperature and DC cycling stress on resistive switching mechanisms in hafnia-based ferroelectric tunnel junction

Low-Power Vertical Tunnel Field-Effect Transistor Ternary Inverter

Low-frequency noise characteristics of indium–gallium–zinc oxide ferroelectric thin-film transistors with metal–ferroelectric–metal–insulator–semiconductor structure

Impact of interlayer insulator formation methods on HfOx ferroelectricity in the metal–ferroelectric–insulator–semiconductor stack

Analysis on Tunnel Field-Effect Transistor with Asymmetric Spacer

Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer

Variability analysis of ferroelectric FETs in program operation using low-frequency noise spectroscopy

A Nitrided Interfacial Oxide for Interface State Improvement in Hafnium Zirconium Oxide-Based Ferroelectric Transistor Technology

Schottky Contact-induced Hump Phenomenon by Bias and Optical Stresses in Amorphous Oxide Thin Film Transistor

Self‐Curable Synaptic Ferroelectric FET Arrays for Neuromorphic Convolutional Neural Network

1/f Noise in Synaptic Ferroelectric Tunnel Junction: Impact on Convolutional Neural Network

Floating Fin Shaped Stacked Nanosheet MOSFET for Low Power Logic Application

Drift-Free pH Detection With Silicon Nanowire Field-Effect Transistors

Ferroelectric-Metal Field-Effect Transistor With Recessed Channel for 1T-DRAM Application

Negative Capacitance, n-Channel, Si FinFETs: Bi-directional Sub-60 mV/dec, Negative DIBL, Negative Differential Resistance and Improved Short Channel Effect

Analog Synaptic Devices Based on IGZO Thin‐Film Transistors with a Metal–Ferroelectric–Metal–Insulator–Semiconductor Structure for High‐Performance Neuromorphic Systems

Proposition of Adaptive Read Bias: A Solution to Overcome Power and Scaling Limitations in Ferroelectric‐Based Neuromorphic System

Investigation on Tunneling-based Ternary CMOS with Ferroelectric-Gate Field Effect Transistor Using TCAD Simulation

Impact of Pt grain size on ferroelectric properties of zirconium hafnium oxide by chemical solution deposition

Gate-Normal Negative Capacitance Tunnel Field-Effect Transistor (TFET) With Channel Doping Engineering

Ferroelectric-gate tunnel field-effect transistor one-transistor ternary contents addressable memory

Demonstration of Ferroelectric-Gate Field-Effect Transistors with Recessed Channels

Suchergebnisse filtern