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Strong Coupling of Epsilon-Near-Zero Phonon Polaritons in Polar Dielectric Heterostructures

Nano letters, 2018-07, Vol.18 (7), p.4285-4292

2018

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Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates

Journal of crystal growth, 2016-12, Vol.456, p.121-132

2016

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Band Alignment of ScxAl1-xN/GaN Heterojunctions

ACS applied materials & interfaces, 2020-11, Vol.12 (46), p.52192-52200

2020

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Phase Identification and Ordered Vacancy Imaging in Epitaxial Metallic Ta2N Thin Films

ACS applied materials & interfaces, 2021-03, Vol.13 (10), p.12575-12580

2021

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Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications

Physica status solidi. A, Applications and materials science, 2020-02, Vol.217 (3), p.n/a

2020

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Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Journal of crystal growth, 2013-10, Vol.380, p.14-17

2013

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Effect of interfacial oxygen on the microstructure of MBE-grown homoepitaxial N-polar GaN

Journal of crystal growth, 2015-01, Vol.409, p.14-17

2015

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Structural characterization of epitaxial γ-Ta2N thin films and AlN/γ-Ta2N heterostructures on SiC substrates

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023-07, Vol.41 (4)

2023

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Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-12, Vol.38 (6)

2020

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An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity

Science advances, 2021-02, Vol.7 (8)

2021

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Observation of vertical honeycomb structure in InAlN ∕ GaN heterostructures due to lateral phase separation

Applied physics letters, 2007-02, Vol.90 (8), p.081917-081917-3

2007

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Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures

APL materials, 2021-11, Vol.9 (11), p.111101-111101-9

2021

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Comparison of microstructure of N-polar GaN/AlGaN/GaN heterostructures grown on different substrates

Journal of crystal growth, 2012-10, Vol.357 (C), p.25-29

2012

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XeF2 etching of epitaxial Nb2N for lift-off or micromachining of III-N materials and devices

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2017-09, Vol.35 (5)

2017

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Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2016-03, Vol.34 (2)

2016

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Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates

Journal of crystal growth, 2007-07, Vol.305 (2), p.340-345

2007

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AlN/GaN HEMTs with high-κ ALD HfO2 or Ta2O5 gate insulation

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2420-2423

2011

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SiNx/InAlN/AlN/GaN MIS-HEMTs With 10.8 THz.V Johnson Figure of Merit

IEEE electron device letters, 2014, Vol.35 (5), p.527-529

2014

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Metallic β-Nb2N Films Epitaxially Grown by MBE on Hexagonal SiC Substrates

MRS Advances, 2016, Vol.1 (2), p.127-132

2016

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Effect of Al∕N flux ratio during nucleation layer growth on the microstructure of GaN films grown by molecular-beam epitaxy

Applied physics letters, 2006-01, Vol.88 (1), p.011916-011916-3

2006

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Effect of Al∕N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN∕GaN heterostructures

Applied physics letters, 2004-10, Vol.85 (17), p.3786-3788

2004

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High Electron Velocity Submicrometer AIN/GaN MOS-HEMTs on Freestanding GaN Substrates

IEEE electron device letters, 2013, Vol.34 (2), p.199-201

2013

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Correlation of electronic and structural properties of MBE-grown AlGaN/GaN heterostructures to Al/N flux ratio during nucleation layer growth

Physica status solidi. C, 2005-05, Vol.2 (7), p.2212-2215

2005

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Strong Coupling of Epsilon-Near-Zero Phonon Polaritons in Polar Dielectric Heterostructures

Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates

Band Alignment of ScxAl1-xN/GaN Heterojunctions

Phase Identification and Ordered Vacancy Imaging in Epitaxial Metallic Ta2N Thin Films

Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications

Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Effect of interfacial oxygen on the microstructure of MBE-grown homoepitaxial N-polar GaN

Structural characterization of epitaxial γ-Ta2N thin films and AlN/γ-Ta2N heterostructures on SiC substrates

Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy

An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity

Observation of vertical honeycomb structure in InAlN ∕ GaN heterostructures due to lateral phase separation

Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures

Comparison of microstructure of N-polar GaN/AlGaN/GaN heterostructures grown on different substrates

XeF2 etching of epitaxial Nb2N for lift-off or micromachining of III-N materials and devices

Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy

Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates

AlN/GaN HEMTs with high-κ ALD HfO2 or Ta2O5 gate insulation

SiNx/InAlN/AlN/GaN MIS-HEMTs With 10.8 THz.V Johnson Figure of Merit

Metallic β-Nb2N Films Epitaxially Grown by MBE on Hexagonal SiC Substrates

Effect of Al∕N flux ratio during nucleation layer growth on the microstructure of GaN films grown by molecular-beam epitaxy

Effect of Al∕N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN∕GaN heterostructures

High Electron Velocity Submicrometer AIN/GaN MOS-HEMTs on Freestanding GaN Substrates

Correlation of electronic and structural properties of MBE-grown AlGaN/GaN heterostructures to Al/N flux ratio during nucleation layer growth

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